The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

1:42 PM - 1:44 PM

[SO-PS-08-07] Control of Ge Nanowire Orientation in Selective-Area VLS Growth on Si (111)

○Shohei Okuda1, Shuma Yuzawa1, Michiharu Makino1, Wipakorn Jevasuwan2, Naoki Fukata2, Shinjiro Hara1 (1. Research Center for Integrated Quantum Electronics, Hokkaido Univ. (Japan), 2. Research Center for Materials Nanoarchitectonics, National Inst. for Materials Science (NIMS) (Japan))

We investigate the effects of GeH4 partial pressure on the selective-area growth of Ge nanowires (NWs) by the vapor-liquid-solid (VLS) method using position-controlled circular patterns of Au thin film catalysts on Si (111) substrates. By decreasing a GeH4 partial pressure, Ge NWs are grown preferentially in the <111> directions, possibly depending on a diameter of circular Au catalyst patterns.