13:46 〜 13:48
[SO-PS-08-09] Performance and Device Physics Evaluation of Ultra-thin Body BAs Transistors based on Quantum Transport and Wannier-type Tight-Binding Simulations
We evaluate the performance and device physics of ultra-thin body (UTB) BAs with thickness at the sub-nm scale. The ab-initio study of UTB-BAs is first performed, revealing its anisotropic band structure induced by symmetry breaking in ultra-thin structure. Different sub-band energies are found to be the main differences between the UTB-BAs and UTB-Si in a benchmark study. Then, the quantum transport is performed based on non-equilibrium Green’s function (NEGF), and the results show both UTB-BAs NMOS and PMOS performance surpass the IRDS projection with Ion of 4.1 mA/μm and 4.4 mA/μm, rendering it a promising candidate for next-generation FETs.