Phase and Thickness Dependence of Inverse Spin Hall Effect in Topological Insulator Sb<sub>2</sub>Te<sub>3</sub>/Ferromagnetic CoFeB Bilayers

Misako Morota

13:36 〜 13:38

[SO-PS-09-04] Phase and Thickness Dependence of Inverse Spin Hall Effect in Topological Insulator Sb₂Te₃/Ferromagnetic CoFeB Bilayers

^○Misako Morota¹, Wipakorn Jevasuwan², Naoki Fukata², Yuta Saito¹ (1. AIST (Japan), 2. NIMS (Japan))

Sb₂Te₃ is a layered material that possesses the characteristics of a topological insulator and a phase-change material. In this study, we measured the electromotive force of Sb₂Te₃/CoFeB bilayers, namely, the inverse spin Hall effect (ISHE), induced by ferromagnetic resonance. Two different Sb₂Te₃ phases (crystal and amorphous) were prepared and, the phase dependent ISHE was investigated. The ISHE exhibited large thickness dependence for the crystalline Sb₂Te₃ phase, while smaller change against the thickness for the amorphous phase. These findings will be beneficial for the development of a novel device utilizing both charge and spin degrees of freedom in topological insulator-based spintronics applications.

2023 International Conference on Solid State Devices and Materials

[SO-PS-09-04] Phase and Thickness Dependence of Inverse Spin Hall Effect in Topological Insulator Sb2Te3/Ferromagnetic CoFeB Bilayers

[SO-PS-09-04] Phase and Thickness Dependence of Inverse Spin Hall Effect in Topological Insulator Sb₂Te₃/Ferromagnetic CoFeB Bilayers