The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

13:44 〜 13:46

[SO-PS-09-08] Noise properties in the Coulomb blockade region of FinFET

○Tetsufumi - Tanamoto1, Keiji - Ono2, Jun - Deguchi3, Junji - Wadatsumi3, Ryuichi - Fujimoto3 (1. Teikyo Univ. (Japan), 2. Riken (Japan), 3. Kioxia Corp. (Japan))

A fin field-effect transistor (FinFET) is a promising candidate for the platform of a Si quantum computer. The noise properties of commercial FinFETs are investigated experimentally at a temperature of less than 10 K. The drain current shows a Coulomb oscillation, which indicates that the FinFET channel becomes a single quantum dot. The noise of the drain current is analyzed, and the basic properties of commercial FinFETs in the low-temperature region are discussed.