The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

13:44 〜 13:46

[SO-PS-10-08] High Electrical Performance with Superior Bias Stabilities for an Oxide Thin-Film Transistor with Solution-Processed Ultra-Thin Semiconductor

○Jun-Hyeong Park1, Do-Kyung Kim1, Jin-Hyuk Bae1,2 (1. School of Electronic and Electrical Engineering, Kyungpook National Univ. (Korea), 2. School of Electronics Engineering, Kyungpook National Univ. (Korea))

Here, we demonstrate solution-processed ultra-thin indium oxide (InOx) semiconductor for high performance thin-film transistors (TFTs). The bandgap of the InOx was controlled by depositing the InOx solution with extremely low molar concentration. As result, the high field-effect mobility of 13.95 cm2 V-1 s-1, on/off current ratio of 1.42ⅹ1010, and thickness of 3 nm were achieved. The electron transport of low-dimensional InOx is based on percolation conduction mechanism due to its high carrier concentration. Furthermore, fabricated low-dimensional InOx TFTs shows superior positive and negative gate bias stress stabilities which are important in display applications.