The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

13:48 〜 13:50

[SO-PS-11-10] Crystal growth, luminescence and scintillation properties of Er-doped La2Hf2O7 single crystal

○Yuui Yokota1, Naomoto Hayashi1, Takahiko Horiai1, Kohei Yamanoi2, Masao Yoshino1, Nobuhiko Sarukura2, Akira Yoshikawa1 (1. Tohoku Univ. (Japan), 2. Osaka Univ. (Japan))

Single crystal of Er-doped La2Hf2O7 (LHO:Er) with high melting point of 2413 °C was grown from the melt by the modified micro-pulling-down (m-PD) method using a tungsten (W) crucible and deoxygenated insulators. Deoxygenated insulators suppress the oxidation of the W crucible at high temperature and the LHO:Er fiber single crystal could be obtained. In the photoluminescence spectrum of LHO:Er polished specimen, emission peaks originating from the Er3+ ion could be observed in the visible and infra-red wavelength ranges. The LHO:Er sintilalltor single crystal is expected to be applied for scintillator with large stopping power and emission in the infra-red region.