Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge1−x−ySixSn y layers

Itsuki Sugimura

13:52 〜 13:54

[SO-PS-11-12] Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge₁_−x−ySi_xSn _y layers

^○Itsuki Sugimura¹, Masaya Nakata¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Takayoshi Katase², Masashi Kurosawa¹ (1. Nagoya Univ. (Japan), 2. Tokyo Tech. (Japan))

Low-temperature (T: 5–300 K) thermoelectric properties were evaluated for n-type lattice matched Ge-rich Ge_1−x−ySi_xSn_y layers (x/y~3.7) epitaxially grown on semi-insulating GaAs (001) substrates. We found that a larger power factor (PF) can be obtained at lower temperatures around 10–100 K. This would be thanks to a phonon-drag effect. Further, we found that samples with higher electron concentrations (n) have more favorable PF because a strong phonon-drag effect remains, unlike Ge_1−xSn_x. In this study, we achieved over 80 times larger the PF value at 20 K than the PF value at room temperature for n=1×10²⁰ cm⁻³.

2023 International Conference on Solid State Devices and Materials

[SO-PS-11-12] Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge1−x−ySixSn y layers

[SO-PS-11-12] Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge₁_−x−ySi_xSn _y layers