The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023年9月5日 〜 2023年10月31日
Nagoya Congress Center

14:02 〜 14:04

[SO-PS-11-17] Enhancement of Mg Induced Lateral Crystallization of Amorphous Ge on Insulating Substrate by Two-Step Annealing

○Atsuki - Morimoto1, Towa Hirai1, Ayato Takazaiku1, Hajime Kuwazuru1, Kenichiro Takakura1, Isao Tsunoda1 (1. Natl. Inst. of Tech., Kumamoto College (Japan))

We have investigated Mg induced lateral crystallization of amorphous Ge on insulating substrate. Mg induced lateral crystallization length was at most ~ 2 µm after annealing at 350 °C for 60 min. To enhance the Mg induced lateral crystallization, two-step annealing effect on Mg induced lateral crystallization is investigated. This process significantly enhanced the Mg induced lateral crystallization length (~ 6 times). This demonstrates the two-step annealing process is highly effective on metal induced lateral crystallization of amorphous Ge on insulating substrate.