A sub-50-mV supply, recursive stacking body bias NAND gate for extremely low-voltage energy harvesting

Shintaro Sumi

1:36 PM - 1:38 PM

[SO-PS-12-04] A sub-50-mV supply, recursive stacking body bias NAND gate for extremely low-voltage energy harvesting

^○Shintaro Sumi¹, Hikaru Sebe¹, Daisuke Kanemoto¹, Tetsuya Hirose¹ (1. Osaka Univ. (Japan))

This paper presents a recursive stacking body-bias NAND for extremely low voltage application. The voltage gain of the proposed NAND and the effect of the leakage current are improved and suppressed, respectively, by adding NAND gates recursively. A prototype chip was fabricated in a 180-nm CMOS process and demonstrated that the voltage swing was improved by 22% at 50 mV supply.

2023 International Conference on Solid State Devices and Materials

[SO-PS-12-04] A sub-50-mV supply, recursive stacking body bias NAND gate for extremely low-voltage energy harvesting