[SO-PS-11-10] Crystal growth, luminescence and scintillation properties of Er-doped La₂Hf₂O₇ single crystal

^○Yuui Yokota¹, Naomoto Hayashi¹, Takahiko Horiai¹, Kohei Yamanoi², Masao Yoshino¹, Nobuhiko Sarukura², Akira Yoshikawa¹ (1. Tohoku Univ. (Japan), 2. Osaka Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 13:48 〜 13:50 |PDF ダウンロード

[SO-PS-11-11] First Principles Studies on Mg Impurity Incorporation into GaN during MOVPE Growth

^○Takashi Kuroda¹, Lisa Mizuno², Shuto Hattori³, Kenji Shiraishi^3,4 (1. Gifu Highschool (Japan), 2. Nanzan Highschool (Japan), 3. Graduate School of Engineering, Nagoya Univ. (Japan), 4. Institue of Materials and Sytemss for Sustainability, Nagoya Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 13:50 〜 13:52 |PDF ダウンロード

[SO-PS-11-12] Low-temperature thermoelectric power-factor enhancement of n-type Ge-rich Ge₁_−x−ySi_xSn _y layers

^○Itsuki Sugimura¹, Masaya Nakata¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Takayoshi Katase², Masashi Kurosawa¹ (1. Nagoya Univ. (Japan), 2. Tokyo Tech. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 13:52 〜 13:54 |PDF ダウンロード

[SO-PS-11-13] Local strain distribution analysis in strained SiGe spintronics devices

^○Tomoki Onabe¹, Zhendong Wu¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Kazushi Sumitani², Yasuhiko Imai², Shigeru Kimura², Takahiro Naito¹, Kohei Hamaya¹, Akira Sakai¹ (1. Osaka Univ. (Japan), 2. JASRI (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 13:54 〜 13:56 |PDF ダウンロード

[SO-PS-11-14] Optoelectronic properties of Ge₁₋_xSn_x/high-Si-content Si_yGe₁₋_y₋ _zSn_z double quantum wells formed by low-temperature MBE growth and post deposition annealing

^○Shigehisa Shibayama¹, Shiyu Zhang¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka¹ (1. Nagoya Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 13:56 〜 13:58 |PDF ダウンロード

[SO-PS-11-15] Formation of Ultra-thin Nickel Silicide on SiO₂ Using a-Si/Ni/a-Si Structures for Oxidation Control

^○Keisuke Kimura¹, Noriyuki Taoka², Akio Ohta³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Aichi Inst. of Tec. (Japan), 3. Fukuoka Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 13:58 〜 14:00 |PDF ダウンロード

[SO-PS-11-16] Oxygen Adsorption on Pseudomorphic Fe(111)/Ru(0001) Surface: A combined LEED analysis and First-Principles DFT Study.

^○Dhiman Banik¹, Yuka Nagamatsu¹, Takeshi Nakagawa¹ (1. Kyushu University (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 14:00 〜 14:02 |PDF ダウンロード

[SO-PS-11-17] Enhancement of Mg Induced Lateral Crystallization of Amorphous Ge on Insulating Substrate by Two-Step Annealing

^○Atsuki - Morimoto¹, Towa Hirai¹, Ayato Takazaiku¹, Hajime Kuwazuru¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1. Natl. Inst. of Tech., Kumamoto College (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 14:02 〜 14:04 |PDF ダウンロード

[SO-PS-11-18 (Late News)] Unveiling the role of trimethylaluminum in passivating InAs surface quantum dots

^○Hanif Mohammadi¹, Ronel Christian Roca¹, Hyunju Lee², Yoshio Ohshita¹, Naotaka Iwata¹, Itaru Kamiya¹ (1. Toyota Tech. Inst. (Japan), 2. Meiji Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 14:04 〜 14:06 |PDF ダウンロード

[SO-PS-11-19 (Late News)] The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

^○ARUN KUMAR DHASIYAN¹, Swathy Jayaprasad¹, Frank Wilson Amalraj¹, Naohiro Shimizu¹, Osamu Oda¹, Kenji Ishikawa ¹, Masaru Hori¹ (1. Center for Low-temperature Plasma Sciences, Nagoya University (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 14:06 〜 14:08 |PDF ダウンロード