[B-4-01 (Invited)] Electron- and Magnon-Mediated Spin Torque based on Topological Materials

^○Yi Wang¹, Fanyu Meng¹, Ying Feng¹, Wenbo Li¹, Tuo Zhang¹, Hyunsoo Yang² (1. Dalian University of Technology (China), 2. National University of Singapore (Singapore))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 10:45 AM - 11:15 AM |PDF Download

[B-4-02] Circular photogalvanic effect in spin-splitting metallic state at the surface of SrTiO ₃ substrates

^○Mahiro Yamamoto^1,2, Taiki Nishijima^1,2, Ryo Ohshima^1,2, Yuichiro Ando^1,2,3, Masashi Shiraishi^1,2 (1. Kyoto Univ. (Japan), 2. CSRN Kyoto Univ. (Japan), 3. PRESTO (Japan))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 11:15 AM - 11:30 AM |PDF Download

[B-4-03] Annealing temperature effects on spin orbit torque in YPtBi topological semimetal and Co/Pt perpendicular magnetization multilayers

^○Sho Kagami¹, Takanori Shirokura¹, Pham Nam Hai¹ (1. Tokyo Institute of Technology (Japan))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 11:30 AM - 11:45 AM |PDF Download

[B-6-01 (Invited)] Hardware Implementation of Probabilistic Models through Nanodevice Variability

^○Louis Hutin¹, Djohan Bonnet¹, Kamal Danouchi², Tifenn Hirtzlin¹, Thomas Dalgaty³, Philippe Talatchian², Francois Andrieu¹, Kevin Garello², Damien Querlioz⁴, Elisa Vianello¹ (1. CEA-Leti (France), 2. CEA-CNRS-SPINTEC (France), 3. CEA-List (France), 4. Univ. Paris-Saclay, CNRS (France))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 10:45 AM - 11:15 AM |PDF Download

[B-6-02] Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir

^○Daiki Nishioka^1,2, Takashi Tsuchiya¹, Wataru Namiki¹, Masataka Imura¹, Yasuo Koide¹, Tohru Higuchi², Kazuya Terabe¹ (1. National Institute for Materials Science (Japan), 2. Tokyo Univ. of Sci. (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 11:15 AM - 11:30 AM |PDF Download

[B-6-03] Scaling of Device Area for Ultra-low-power Dissipation in 2-terminal Protonic Artificial Synapses

Satya Prakash Pati¹, Satoshi Hamasuna¹, ^○Takeaki Yajima¹ (1. Kyushu University (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 11:30 AM - 11:45 AM |PDF Download

[B-6-04] Giant electrostatic modulation of transient characteristics in metal-to-insulator VO ₂ transition

^○Satoshi Hamasuna Hamasuna¹, Satya Prakash Pati¹, Takeaki Yajima¹ (1. Kyushu Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 11:45 AM - 12:00 PM |PDF Download

[B-6-05] Novel WN _x/C Interfacial Layer on Hf _0.5Zr _0.5O ₂ Ferroelectric Memory

^○Abhijit Aich¹, Asim Senapati¹, Zhao- Feng Lou², Fu- Sheng Chang², Yu- Rui Chen², Yi- Pin Chen^1,3, Shih- Yin Huang^3,4, Siddheswar Maikap^1,3, Chee- Wee Liu², Min- Hung Lee² (1. Chang Gung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. Keelung Chang Gung Memorial Hospital (Taiwan), 4. Chang Gung University College of Medicine (Taiwan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 12:00 PM - 12:15 PM |PDF Download

[C-2-01] Mitigation of Carrier Trapping Effects on Carrier Lifetime Measurements with Continuous-Wave Laser Illumination for Metal Halide Perovskite Materials

^○NTUMBA LOBO¹, Gebhard Josef Matt², Andres Osvet², Shreetu Shrestha², Levchuk Ievgen², Andrii Kanak³, Petro Fochuk³, Christoph J Brabec², Masashi Kato¹ (1. Nagoya Inst. of Tech (Japan), 2. Friedrich-Alexander Universität Erlangen-Nürnberg (Germany), 3. Yuriy Fedkovych Chernivtsi National Univ. (Ukraine))

2023 International Conference on Solid State Devices and Materials |Wed. Sep 6, 2023 4:00 PM - 4:15 PM |PDF Download

[C-2-02] Surface-Passivation-Improvement Mechanism in Perovskite Solar Cells by the Surface Modification of NiO _x Hole-Selective Contacts with 2PACz SAMs

^○Seira Yamaguchi¹, Atsushi Sato¹, Kaori Ajiro², Miyuki Shiokawa², Yuya Hashimoto³, Takuto Maeda³, Mutsumi Sugiyama³, Takeshi Gotanda², Kazuhiro Marumoto^1,4 (1. Univ. of Tsukuba (Japan), 2. Toshiba ESS (Japan), 3. Tokyo Univ. of Sci. (Japan), 4. TREMS, Univ. of Tsukuba (Japan))

2023 International Conference on Solid State Devices and Materials |Wed. Sep 6, 2023 4:15 PM - 4:30 PM |PDF Download