[17p-Z19-8~24] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [17p-Z19-9] Material dependence of the spin rectification effect in nonmagnet/ferromagnet bilayers

〇Motomi Aoki¹、Yuichiro Ando¹、Syuta Honda²、Ryo Ohshima¹、Ei Shigematsu¹、Teruya Shinjo¹、Masashi Shiraishi¹ (1.Kyoto Univ.、2.Kansai Univ.)

キーワード：spin orbit torque, spin rectification effect, magnetization dynamics

Recently, we demonstrated the detection of spin-orbit-torque magnetization switching by using the rectification signal under microwave irradiation (low frequency spin torque ferromagnetic resonance: LFST-FMR). This method does not need any complicated nanostructures such as magnetic tunnel junctions. Therefore, LFST-FMR is expected to realize agile research on various materials combination of nonmagnet (NM)/ferromagnet (FM) layers. In this study, we investigated the spin rectification effect of several kinds of NM/FM bilayers. In this presentation, we discuss the origin of FM and NM dependent characteristics of spin rectification signal in detail.