09:45 〜 10:00
▼ [19a-Z18-4] Organic field-effect transistors based on newly synthesized dibenzo[n]phenacenes (n = 5 - 7)
キーワード：Organic field-effect transistors
The extended phenacene molecules, [n]phenacenes (n = 5 to 11), that consist of fused benzene rings taking a W-shaped structure, have been synthesized, and the field-effect transistors (FETs) using their molecules were successfully fabricated, demonstrating excellent performance with the high field-effect mobility [1]. The [n]phenacene and phenacene derivatives show high air-stability, compared with acene type molecules like pentacene. Therefore, the synthesis of new types of phenacene derivatives is of significance to realize high-performance FETs without degradation under atmospheric condition.
In this study, a new type of phenacene molecules, dibenzo[n]phenecenes (DBnPs, n = 5 to 7), were synthesized via a combination of Migita-Kosugi-Stille and Heck-Mizorogi cross coupling reactions followed by Mallory photocyclization. Physical properties and FET performance were investigated for thin films and single crystals of DBnPs. The X-ray diffraction patterns of DBnP thin films formed on a SiO2/Si substrate suggested that the inclined angle of the long molecular axis with respect to a normal direction of a substrate surface decreased with an increase in n of DBnP, because of stronger p-p interaction due to an increase in the number of benzene rings. The FETs using DBnP single crystals were fabricated, which showed good p-channel properties. The average values of field-effect mobility of DBnP (n = 5 to 7) single crystal FETs were 1.3(8), 1.7(8), and 1.8(5) cm2 V-1 s-1, respectively. Details of FET characteristics of DBnP (n = 5 to 7) single crystals will be discussed in my talk.
[1] R. Eguchi et al., Phys. Chem. Chem. Phys. 15, 20611 (2013); H. Okamoto et al. Sci. Rep. 4, 5330 (2014); Y. Shimo et al., Sci. Rep. 6, 21008 (2016); H. Okamoto et al., Sci. Rep. 9, 4009 (2019).
In this study, a new type of phenacene molecules, dibenzo[n]phenecenes (DBnPs, n = 5 to 7), were synthesized via a combination of Migita-Kosugi-Stille and Heck-Mizorogi cross coupling reactions followed by Mallory photocyclization. Physical properties and FET performance were investigated for thin films and single crystals of DBnPs. The X-ray diffraction patterns of DBnP thin films formed on a SiO2/Si substrate suggested that the inclined angle of the long molecular axis with respect to a normal direction of a substrate surface decreased with an increase in n of DBnP, because of stronger p-p interaction due to an increase in the number of benzene rings. The FETs using DBnP single crystals were fabricated, which showed good p-channel properties. The average values of field-effect mobility of DBnP (n = 5 to 7) single crystal FETs were 1.3(8), 1.7(8), and 1.8(5) cm2 V-1 s-1, respectively. Details of FET characteristics of DBnP (n = 5 to 7) single crystals will be discussed in my talk.
[1] R. Eguchi et al., Phys. Chem. Chem. Phys. 15, 20611 (2013); H. Okamoto et al. Sci. Rep. 4, 5330 (2014); Y. Shimo et al., Sci. Rep. 6, 21008 (2016); H. Okamoto et al., Sci. Rep. 9, 4009 (2019).