15:45 〜 16:00
▼ [19p-Z13-9] Lowering Crystallization Temperature of Lead Zirconate Titanate (PZT) Thin Film Synthesized by Solution-Combustion Synthesis Method using a Lead Titanate (PTO) Seeding Layer
キーワード：PZT Ferroelectric Thin-films, Solution-Combustion Synthesis, Seeding Layer
Nowadays, flexible electronics gather increasing attention, however, to apply the most widely used ferroelectric PZT material on flexible substrates such as polyimide, a processing temperature as low as 350 oC is normally required. It has been reported that the perovskite transformation of PZT is a nucleation-controlled process, thus introducing a seeding layer, such as commonly used PbTiO3 (PTO), could decrease the surface energy leading to increasing the kinetics of the nucleation, and hence, the crystallization temperature could be lowered. Based on previous study where we proposed the solution-combustion synthesis (SCS) approach, hereafter so-called SCS-PZT, for fabrication of PZT thin-films at 450 oC, which is far lower than the conventional crystallization temperature of PZT (>600 oC). In this study, we combine the SCS method with introduction of a PbTiO3 (PTO) seeding layer for further lowering the crystallization temperature. From the SEM result, the nucleation of crystallized perovskite phase was clearly observed for the SCS-PZT thin film with the PTO seeding layer, as compared to the film without the seeding layer under 400 oC. The result suggests that the PTO seeding layer could lower the crystallization temperature of SCS-PZT thin film.