Yttrium Doping Concentration Dependence on Ferroelectric Properties of Hafnium-Zirconium Oxide Prepared by Chemical Solution Deposition

Presentation information

Oral Session

B. Fundamentals of Novel Structure of Materials » [B-4] Recent development of novel ferroelectric materials, from fundamentals to applications

Mon. Dec 13, 2021 9:00 AM - 11:00 AM Room N (G314+315)

Chair: Alexei Gruverman (University of Nebraska-Lincon), Hiroshi Funakubo (Tokyo Institute of Technology)

9:30 AM - 9:45 AM

*Keisuke Sasaki¹, Mohit Mohit¹, Eisuke Tokumitsu¹ (1. Japan Advanced Institute of Science and Technology (Japan))

Keywords:ferroelectric, chemical solution deposition, HfO2, thin films

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