Pump-probe X-ray Diffraction Analysis of Lattice Deformation Induced by Inverse Piezoelectric Effect in AlGaN/GaN HEMT Devices

Akira Sakai

Presentation information

Oral Session

D. Frontiers of Advanced Electronic Materials » [D-4] Synchrotron Radiation Based Materials Research: Present and the Future

[D4-O2] Slot 02

Mon. Dec 13, 2021 1:30 PM - 5:00 PM Room S (G320)

Chair: Yasuhiko Imai (JASRI), Hiroshi Uchiyama (JASRI)

2:35 PM - 3:00 PM

[D4-O2-03 (Symposium Invited)] Pump-probe X-ray Diffraction Analysis of Lattice Deformation Induced by Inverse Piezoelectric Effect in AlGaN/GaN HEMT Devices

*Akira Sakai¹, Akira Ueda¹, Haruna Shiomi¹, Akihiro Shimada¹, Yasuhiko Imai², Yusuke Hayashi¹, Tetsuya Tohei¹, Yuji Ando³, Tamotsu Hashizume³, Kazushi Sumitani², Shigeru Kimura² (1. Osaka Univ. (Japan), 2. JASRI (Japan), 3. Hokkaido Univ. (Japan))

Keywords:Pump-probe method, Nanobeam X-ray diffraction, Inverse piezoelectric effect, AlGaN/GaN HEMT, Time-resolved analysis , gate voltage

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