[Mo-P] Poster Presentation

[Mo-P-48] High-Temperature Reliability Analysis of 1200V/100A 4H-SiC Junction Barrier Schottky Diodes

*Yidan Tang^1,2, Xinyu Liu¹, Yun Bai¹, Chengzhan Li³, Chengyue Yang ¹ (1. Microelectronics of Chinese Academy of Sciences Inst(China), 2. Chinese Academy of Sciences Univ(China), 3. Zhuzhou CRRC Times Electric Co., Ltd(China))