[Tu-P] Poster Presentation

[Tu-P-51LN] GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layer by tri-halide vapor phase epitaxy

*KAZUKUNI HARA^1,2, Junji Ohara¹, Daisuke Uematsu¹, Shoichi Onda² (1. DENSO Corp.(Japan), 2. Nagoya Univ.(Japan))