[We-P] Poster Presentation

[We-P-36] Compatibility of POCl₃ gate process with the fabrication of vertical 4H-SiC MOSFETs

*Tomokatsu Watanabe¹, Munetaka Noguchi¹, Shingo Tomohisa¹, Naruhisa Miura¹ (1. Mitsubishi Electric corporation(Japan))