[CTuP11F] Novel Semiconductor Lasers

[CTuP11F-02] Strain-compensated type-II GaAs_1−xBi_x/GaN_yAs_1−y “W” quantum wells for GaAs-based telecom lasers

*Zoe C M Davidson¹, Judy M Rorison¹, Stephen J Sweeney², Christopher A Broderick^3,4 (1. University of Bristol (UK), 2. University of Surrey (UK), 3. Tyndall National Institute (Ireland), 4. University College Cork (Ireland))

[Presentation Style] Online

We theoretically analyse strain-compensated GaAs_1−xBi_x/GaN_yAs_1−y “W-type” quantum wells, demonstrating a viable approach to achieve efficient GaAs-based 1.3 and 1.55 µm lasers in which non-radiative Auger recombination is expected to be mitigated by type-II band offsets.