セッション情報

Oral Presentation

MOS Gate Stacks and Device Processing

[Mo-2A] Oxidation and Nitridation

2019年9月30日(月) 14:15 〜 15:30 Room A (Kyoto International Conference Center)

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14:15 〜 14:30

[Mo-2A-01] Anomalous band alignment change of SiO₂/4H-SiC MOS capacitors induced by NO-POA and its possible origin

*Tae-Hyeon Kil¹, Koji Kita¹ (1. Univ. of Tokyo(Japan))

14:30 〜 14:45

[Mo-2A-02] Investigation of SiC Microwave Plasma Oxidation Kinetics via Oxygen Isotope Labelling

*Nannan You^1,2, Shengkai Wang^1,2, Jilong Hao^1,2, Yun Bai^1,2, Xinyu Liu^1,2 (1. Institute of Microelectronics of the Chinese Academy of Sciences(China), 2. University of Chinese Academy of Sciences(China))

14:45 〜 15:00

[Mo-2A-03] Impact of substrate orientation on the structure of SiO₂/SiC interface

*Xiuyan Li^1,2, Mengjun Li², Tianning Cui¹, Sang Soo Lee³, Sylvie Rangan², Alexi Aermakov², Timothy T. Fister³, Torgny Gustfsson², Eric Garfunkel², Paul Fenter³, Leonard C. feldman² (1. Shanghai Jiao Tong Univ.(China), 2. Rutgers Univ.(United States of America), 3. Argonne National Lab.(United States of America))

15:00 〜 15:15

[Mo-2A-04] Nitridation of SiC surfaces by H₂/N₂ treatment

*Koichi Murata¹, Daisuke Mori², Aki Takigawa², Hidekazu Tsuchida¹ (1. Central Research Institute of Electric Power Industry (CRIEPI)(Japan), 2. Fuji Electric Co., Ltd.(Japan))

15:15 〜 15:30

[Mo-2A-05] Reduction of Interface States in 4H-SiC/SiO₂ near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing

*Keita Tachiki¹, Tsunenobu Kimoto¹ (1. Kyoto Univ.(Japan))

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セッション情報

[Mo-2A] Oxidation and Nitridation

[Mo-2A-01] Anomalous band alignment change of SiO2/4H-SiC MOS capacitors induced by NO-POA and its possible origin

[Mo-2A-02] Investigation of SiC Microwave Plasma Oxidation Kinetics via Oxygen Isotope Labelling

[Mo-2A-03] Impact of substrate orientation on the structure of SiO2/SiC interface

[Mo-2A-04] Nitridation of SiC surfaces by H2/N2 treatment

[Mo-2A-05] Reduction of Interface States in 4H-SiC/SiO2 near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing

認証

[Mo-2A-01] Anomalous band alignment change of SiO₂/4H-SiC MOS capacitors induced by NO-POA and its possible origin

[Mo-2A-03] Impact of substrate orientation on the structure of SiO₂/SiC interface

[Mo-2A-04] Nitridation of SiC surfaces by H₂/N₂ treatment

[Mo-2A-05] Reduction of Interface States in 4H-SiC/SiO₂ near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing