ICSCRM2019

Presentation information

Print

Oral Presentation

Power and High-Frequency Devices

[Mo-1A] MOSFETs I

Mon. Sep 30, 2019 11:30 AM - 12:45 PM Room A (Kyoto International Conference Center)

12:30 PM - 12:45 PM

[Mo-1A-04] 1200 V / 200 A V-groove Trench MOSFET Optimized for Low Power Loss and High Reliability

*Kosuke Uchida1, Toru Hiyoshi1, Yu Saitoh1, Hiroshi Egusa1, Tatsushi Kaneda1, Hirotaka Oomori1, Takashi Tsuno1 (1. Sumitomo Electric Industries, Ltd.(Japan))