ICSCRM2019

講演情報

Oral Presentation

Growth and Wafer Manufacturing

[Mo-2B] 3C-hetero-epitaxy

2019年9月30日(月) 14:15 〜 15:30 Annex Hall 2 (Kyoto International Conference Center)

14:15 〜 14:30

[Mo-2B-01] High-quality C-face 3C-SiC(111) Grown on off-axis C-face 4H-SiC Substrates

Yuchen Shi1, Valdas Jokubavicius1, Ivan G. Ivanov1, Rositsa Yakimova1, Mikael Syväjärvi1, *Jianwu Sun1 (1. Linkoping University, Sweden(Sweden))