Schedule 4 3:45 PM - 5:45 PM [Mo-P-50] Effect of 5MeV Proton Irradiation on 1200V 4H-SiC VDMOSFETs ON-State Characteristics *Dongxun Li1, Xiaoyan Tang1, Yuming Zhang1, Yanjing He1, Qingwen Song1 (1. School of Microelectronics, Xidian Univ.(China))
