[Th-P] Poster Presentation

[Th-P-31] Effect of phosphorus doped poly annealing on threshold voltage stability and thermal oxide reliability in 4H-SiC MOSFET

*Kwangwon Lee¹, Youngho Seo¹, Taeseop Lee¹, Kyeongseok Park¹, Martin Domeij², Fredrik Allerstam², Thomas Neyer³ (1. ON semiconductor(Korea), 2. ON semiconductor (Sweden), 3. ON semiconductor (Germany))