[Th-P] Poster Presentation

[Th-P-36] Analysis of the static characteristics of 4H-SiC Trench MOSFET with novel trench bottom structure

*Hyoung Woo Kim¹, Ogyun Seok¹, Jeong Hyun Moon¹, Wook Bahng¹ (1. Korea Electrotechnology Research Institute(Korea))