ICSCRM2019

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Oral Presentation

Characterization and Defect Engineering

[Tu-1B] Extended Defects I

Tue. Oct 1, 2019 8:45 AM - 10:15 AM Annex Hall 2 (Kyoto International Conference Center)

8:45 AM - 9:15 AM

[Tu-1B-01(Invited)] Operando X-ray topography analysis of 4H-SiC MOSFETs for investigating stacking fault expansion

K. Konishi1, R. Fujita1, K. Kobayashi1, A. Yoneyama1, Y. Mori1, *AKIO SHIMA1 (1. Research & Development Group, Hitachi, Ltd.(Japan))