ICSCRM2019

講演情報

Oral Presentation

Characterization and Defect Engineering

[Tu-1B] Extended Defects I

2019年10月1日(火) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

09:30 〜 09:45

[Tu-1B-03] Synchrotron X-ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-grown 4H-SiC Substrate Wafers

*Tuerxun Ailihumaer1, Balaji Raghothamachar1, Michael Dudley1, Gil Chung2, Ian Manning2, Edward Sanchez2 (1. Stony Brook Univ.(United States of America), 2. Dupont Co.(United States of America))