Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs compared with Linear, Square, and Hexagonal Topologies

講演情報

Oral Presentation

Power and High-Frequency Devices

2019年10月1日(火) 10:45 〜 12:15 Room A (Kyoto International Conference Center)

11:15 〜 11:30

*Kijeong Han¹, Ajit Kanale¹, B. Jayant Baliga¹, Subhashish Bhattacharya¹ (1. North Carolina State Univ.(United States of America))