ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

Tue. Oct 1, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

1:45 PM - 2:15 PM

[Tu-3A-01(Invited)] Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO2/SiC Systems

*Koji Ito1, Takuma Kobayashi1, Tsunenobu Kimoto1 (1. Kyoto Univ.(Japan))