[Tu-P] Poster Presentation

[Tu-P-15] Influence of basal-plane dislocation depth and core-structure on stacking fault expansion in forward-current degradation of 4H-SiC p-i-n diodes

*Shohei Hayashi^1,2, Tamotsu Yamashita^1,3, Junji Senzaki¹, Tomohisa Kato¹, Yoshiyuki Yonezawa¹, Kazutoshi Kojima¹, Hajime Okumura¹ (1. AIST(Japan), 2. Toray Research Center, Inc.(Japan), 3. Showa Denko K.K.(Japan))