Schedule 2 4:15 PM - 6:15 PM [We-P-35] Deposition of Gate Oxide for SiC Trench MOSFET with Thick SiO2 in the Trench Bottom *Takayuki Kobayashi1, Masayuki Nakamura1, Masahiro Furuta1, Yutaka Kusuda1, Shin-ichi Motoyama1 (1. Samco Inc.(Japan))
