Schedule 3 4:15 PM - 6:15 PM [We-P-38] Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors *Holger Schlichting1, Matthias Kocher1, Julietta Weisse2, Tobias Erlbacher1,2, Anton J. Bauer1 (1. Fraunhofer Inst. IISB(Germany), 2. Friedrich-Alexander Univ.(Germany))
