Schedule 2 4:15 PM - 6:15 PM [We-P-55LN] High Temperature Reliability of 4H-SiC Devices and Single Stage 4H-SiC MOSFET Amplifier at 400ºC *Cuong Van Vuong1, Seiji Ishikawa2, Tomonori Maeda2, Hiroshi Sezaki2, Kousuke Muraoka1, Tetsuya Meguro1, Shin-Ichiro Kuroki1 (1. Hiroshima University(Japan), 2. Phenitec Semiconductor Co ,Ltd(Japan))
