[TuP] Poster

[TuP-15] Full-scale exfoliation of InGaN-based light-emitting diodes via microcavity-assisted crack propagation by using tensile-stressed Ni layers

Jung-Hong Min¹, Tae-Hoon Jeong², Kwang Jae Lee³, Jung-Wook Min⁴, *Tae-Yong Park¹, Tien Khee Ng¹, Boon S. Ooi¹ (1. King Abdullah University of Science and Technology (Saudi Arabia), 2. Korea Photonics Technology Institute (Korea), 3. Stanford University (United States of America), 4. University of Michigan (United States of America))

Presentation style: Online

Keywords:GaN, Light-emitting diode, Membrane