Oral presentation

[11a-A29-1~13] 13.4 Si wafer processing /MEMS/Integration technology

Wed. Mar 11, 2015 9:00 AM - 12:30 PM A29 (6A-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[11a-A29-1] Characteristics of PVD-Co(W) film for highly reliable ULSI-Cu interconnect

〇Takeshi Momose¹, Kota Tomita¹, Takaaki Tsunoda², Takashi Nakagawa², Yukihiro Shimogaki¹ (1.The Univ. of Tokyo, 2.CANON ANELVA)

9:15 AM - 9:30 AM

[11a-A29-2] Thermal etching of metal thin films in a supercritical CO₂ fluid

〇(M1)Yoshiki Nakamura¹, Mitsuhiro Watanabe¹, Eiichi Kondoh¹, Mikhail R. Baklanov² (1.Univ. Yamanashi, 2.IMEC)

9:30 AM - 9:45 AM

[11a-A29-3] Mass Transport during Feedback-Controlled Electromigration in Au Nanowires Using Atomic Force Microscopy

〇Mamiko Yagi¹, Saito Takanari¹, Shirakashi Jun-ichi¹ (1.Tokyo Univ. of A. & T.)

9:45 AM - 10:00 AM

△ [11a-A29-4] Printing deposition of thin Cu films using nanosilicon ballistic electron emtter

〇Ryutaro Suda¹, Mamiko Yagi¹, Akira Kojima¹, Romain Mentek¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (1.Tokyo Univ. of Agri. & Technol.)

10:00 AM - 10:15 AM

[11a-A29-5] Development of a Printing plus Plating Method for a Low Resistant Cu Metallization

〇HIDEO TOKUHISA¹, MITSURU TOMITA¹, SATOKO MORITA¹, SHOGO ISE¹, SHIHO TSUKAMOTO¹ (1.AIST)

10:15 AM - 10:30 AM

[11a-A29-6] Process Issues in Optical Integrated Circuits using Silicon Photonics Technology (I) Precise Dimension Control and Monitoring

〇Tsuyoshi Horikawa^1,², Daisuke Shimura², Seok-Hwan Jeong², Masatoshi Tokushima², Keizo Kinoshita², Tohru Mogami² (1.AIST, 2.PETRA)

10:30 AM - 10:45 AM

[11a-A29-7] Process Issues in Optical Integrated Circuits using Silicon Photonics Technology (II) Process Integration and Assembly of Optical Modules

〇Keizo Kinoshita¹, Tsuyoshi Horikawa^1,², Shigekazu Okumura¹, Koichi Takemura¹, Takanori Shimizu¹, Junichi Fujikata¹, Tohru Mogami¹ (1.PETRA, 2.AIST)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

△ [11a-A29-8] Dioxide filled deep silicon-trenches for through-silicon via silicon island arrays

〇Yasuyuki Uraoka¹, Hideo Oi², Makoto Ishida^1,², Takeshi Kawano¹ (1.Electrical and Electronic Information Engineering, Toyohashi Tech., 2.EIIRIS, Toyohashi Tech.)

11:15 AM - 11:30 AM

[11a-A29-9] Preparation of PZT films using continual process of Minimal PZT Sol-Gel Station

〇Junko Kazusa¹, Kazuhiro Koga¹, Norio Umeyama¹, daiji Noda³, Yoshihisa Sensu^1,⁴, Takashi Chiba^1,⁵, Masao Terada^1,⁵, Sommawan Khumpuang^1,², Shiro Hara^1,² (1.MINIMAL, 2.AIST, 3.MMC, 4.Litho Tech Japan, 5.SAKAGUCHI E.H VOC CORP)

11:30 AM - 11:45 AM

[11a-A29-10] Minimal BOSCH Process

〇Hiroyuki Tanaka¹, Yoshiki Shimizu^1,², Hisato Ogiso^1,², Shizuka Nakano^1,², Toshihiro Hayami³, Toshiya Miyazaki³, Kenichi Tomisaka³, Hisamitsu Tezen³, Sommawan Khumpuang^1,², Shiro Hara^1,² (1.MINIMAL, 2.AIST, 3.SPT)

11:45 AM - 12:00 PM

[11a-A29-11] BGA Packaging Process by MINIMAL Equipment

〇Fumito Imura¹, Michihiro Inoue², Arami Saruwatari^1,², Sommawan Khumpuang^1,², Shiro Hara^1,² (1.MINIMAL, 2.AIST)

12:00 PM - 12:15 PM

[11a-A29-12] Minimal Die Bonding Process

〇Koyu Hochi¹, Fumito Imura¹, Kiyoharu Miyamoto^1,², Sommawan Khumpuang^1,³, Shiro Hara^1,³ (1.MINIMAL, 2.IKK, 3.AIST)

12:15 PM - 12:30 PM

[11a-A29-13] MINIMALCompression molding Process

〇yasuhide higashino¹, fumito imura¹, kazuhiko kobayashi², michihiro inoue³, arami saruwatari^1,³, sommawan khumpuang^1,³, shiro hara^1,³ (1.MINIMAL, 2.APIC YAMADA, 3.AIST)

Oral presentation

[11p-A29-1~13] 13.4 Si wafer processing /MEMS/Integration technology

Wed. Mar 11, 2015 2:00 PM - 5:30 PM A29 (6A-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

△ [11p-A29-1] Tactile, Friction, and Temperature Sensor Array for Artificial Electronic Skin

〇Shingo Harada¹, Kenichiro Kanao¹, Yuki Yamamoto¹, Takayuki Arie¹, Seiji Akita¹, Kuniharu Takei¹ (1.Osaka Pref. Univ.)

2:15 PM - 2:30 PM

△ [11p-A29-2] Electronic Skin with high selectivity against a bending of a substrate

〇Kenichiro Kanao¹, Shingo Harada¹, Yuki Yamamoto¹, Wataru Honda¹, Takayuki Arie¹, Seiji Akita¹, Kuniharu Takei¹ (1.Osaka Pref. Univ.)

2:30 PM - 2:45 PM

[11p-A29-3] Fabrication of MEMS Fabry-Perot interferometric surface-stress sensor with microfluidic channel

〇Yoshihiro Masuya¹, Ryo Ozawa¹, Makoto Ishida¹, Kazuaki Sawada^1,², Kazuhiro Takahashi^1,² (1.Toyohashi Univ. of Tech, 2.JST-CREST)

2:45 PM - 3:00 PM

[11p-A29-4] Fabrication of MEMS resonant sensor using ring-shape PZT electrode

〇Kazuhiro Takahashi^1,², Makoto Ishida¹, Kazuaki Sawada^1,² (1.Toyohashi Tech., 2.JST-CREST)

3:00 PM - 3:15 PM

[11p-A29-5] A Study on an Energy Harvesting Device (5)

〇Toshifumi Konishi¹, Daisuke Yamane², Takaaki Matsushima¹, Kazuya Masu², Hiroshi Toshiyoshi³, Katsuyuki Machida^1,² (1.NTT-AT, 2.Tokyo Tech, 3.The Univ. of Tokyo)

3:15 PM - 3:30 PM

[11p-A29-6] Optical Response of Micromechanical Infrared Thermal Detector

〇(PC)Jonghyeon Jeong¹, Shinya Kumagai^1,³, Ichiro Yamashita^2,³, Yukiharu Uraoka^2,³, Minoru Sasaki^1,³ (1.Toyota Technological Institute, 2.Nara Institute of Science and Technology, 3.CREST JST)

Break （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

△ [11p-A29-7] PDMS-made Bacteria Trapping Chip Using Beads III -Time Dependence of Fluorescence Intensity for Various Bacteria-

〇Yusuke Nishimura¹, Ryuhei Hayashi¹, Hirokazu Nakazawa¹, Makoto Ishida¹, Kazuaki Sawada¹, Hiromu Ishii¹, Katsuyuki Machida^2,³, Kazuyuki Masu², Changle Wang⁴, Ken-ichiro Iida⁴, Mitsumasa Saito⁴, Shinichi Yoshida⁴ (1.Toyohashi Univ. of Technology, 2.Tokyo Inst. of Technology, 3.NTT-AT, 4.Graduate School of Medical Sciences, Kyusyu Univ,.)

4:00 PM - 4:15 PM

▲ [11p-A29-8] Two-Dimensional Redox Imaging Employing Integrated Square Wave Voltammetric Pulse Generator Circuit

〇(P)BYOUNGHYUN LIM¹, Sou Takahashi¹, Masato Futagawa², Fumihiro Dasai^1,³, Makoto Ishida¹, Kazuaki Sawada^1,³ (1.Toyohashi Univ. of Tech., 2.Shizuoka Univ., 3.CREST)

4:15 PM - 4:30 PM

[11p-A29-9] Textile Electrode for Wearable Breathing Sensor Based on Capacitance Detection

Makie Terasawa¹, Shinya Kumagai¹, 〇Minoru Sasaki¹ (1.Toyota Tech. Inst.)

4:30 PM - 4:45 PM

[11p-A29-10] Thermal management technique using spectrally selective thermal radiation for electronic devices in small spaces

〇Shinichiro Tsuda¹, Shimizu Makoto¹, Iguchi Fumitada¹, Yugami Hiroo¹ (1.Tohoku Univ.)

4:45 PM - 5:00 PM

[11p-A29-11] Three-dimensional Structure Formation of Porous Silicon by Pyrogenic Oxidation

〇Masaki Denokami¹, Keita Ishiguro¹, Kanna Aoki¹, Minoru Fujii¹ (1.Kobe Univ.)

5:00 PM - 5:15 PM

[11p-A29-12] Wafer-level Hermetic Bonding using Gold Bumps Planarized by Fly Cutting

〇Hideki Hirano¹, Kosuke Hikichi¹, Shuji Tanaka¹ (1.Tohoku Univ.)

5:15 PM - 5:30 PM

[11p-A29-13] Development of a Water Film Chuck for High Precision Thin Grinding

〇Kenichiro Yoshitomi¹, Atsunobu Une¹, Masaaki Mochida¹, Banto Tsubasa², Eiichi Yamamoto² (1.NDA, 2.Okamoto machine tool works)

Oral presentation

[12a-A29-1~11] 13.4 Si wafer processing /MEMS/Integration technology

Thu. Mar 12, 2015 9:00 AM - 12:00 PM A29 (6A-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[12a-A29-1] Calculation of Light Absorption Energy in Si Films during Blue Multi-Laser Diode Annealing

〇Tatsuya Okada¹, Seita Kamimura¹, Takashi Noguchi¹ (1.Univ. Ryukyus)

9:15 AM - 9:30 AM

[12a-A29-2] Lowering resistivity by BLDA for Si film without de-hydrogenation

〇Tomohide Wakasugi¹, Takuya Ashitomi¹, Tatsuya Okada¹, Takashi Noguchi¹, Osamu Nishikata², Atsushi Ota², Kazuhisa Inoue³, Kazuo Yamada³ (1.Ryukyus Univ., 2.ULVAC Inc., 3.Products-support Co. Ltd)

9:30 AM - 9:45 AM

[12a-A29-3] Dependence of Silicon Grain Growth by Micro-Thermal-Plasma-Jet Irradiation on Precursor Films

〇Shohei Hayashi^1,², Seiji Morisaki¹, Shogo Yamamoto¹, Taichi Nakatani¹, Ryota Shin¹, Seiichiro Higashi¹ (1.Grad. School of AdSM, Hiroshima Univ., 2.JSPS Research Fellow PD)

9:45 AM - 10:00 AM

[12a-A29-4] In-situ Observation of Grain Growth in a-Si patterns Crystallized by Atmospheric Micro-Thermal-Plasma-Jet

〇(D)Seiji Morisaki¹, Shohei Hayashi¹, Shogo Yamamoto¹, Taichi Nakatani¹, Takuya Kasahara¹, Seiichiro Higashi¹ (1.Grad. School of AdSM, Hiroshima Univ.)

10:00 AM - 10:15 AM

[12a-A29-5] Formation of orientation-controlled large-grain Ge-rich SiGe on insulator by gold-induced layer-exchange low-temperature crystallization (≤300°C)

〇Taizoh Sadoh¹, Jonghyeok Park^1,², Rikuta Aoki¹, Masanobu Miyao¹ (1.Kyushu Univ., 2.JSPS)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[12a-A29-6] I-V characteristics of amorphous C12A7 electride/crystalline Si contact

〇Toshinari Watanabe¹, Yasuhisa Oana², Yoshitake Toda³, Naomichi Miyakawa¹, Kaoru Furuta², Hideya Kumomi³, Hideo Hosono³ (1.ASAHI GLASS, 2.LG Display, 3.TITech)

10:45 AM - 11:00 AM

[12a-A29-7] Application of amorphous C12A7 electride to TFT electrodes

〇Yasuhisa Oana¹, Toshinari Watanabe², Toda Yoshitake³, Naomichi Miyakawa², Kaoru Furuta¹, Hideya Kumomi³, Hideo Hosono³ (1.LG Display, 2.Asahi Glass, 3.TITech)

11:00 AM - 11:15 AM

[12a-A29-8] Improved crystallinity of Si after BLDA toward multi-layer film structure photosensor

Kota Nakao¹, 〇(M2)Charith Jayanada Koswaththage¹, Tomohide Wakasugi¹, Tatsuya Okada¹, Takashi Noguchi¹ (1.Univ. of the Ryukyus)

11:15 AM - 11:30 AM

[12a-A29-9] Fabricating single-crystalline Silicon CMOS transistors on flexible substrate

〇Kohei Sakaike^1,², Akitoshi Nakagawa¹, Muneki Akazawa¹, Seiichiro Higashi^1,³ (1.Hiroshima Univ., 2.JSPS Research Fellow PD, 3.RNBS, Hiroshima Univ.)

11:30 AM - 11:45 AM

[12a-A29-10] Investigation of Relationship between Crystallization Speed and Off Current of TFT Fabricated by Atmospheric Pressure Micro-Thermal-Plasma-Jet Crystallized Germanium Film

〇Taichi Nakatani¹, Shohei Hayashi¹, Seiji Morisaki¹, Shogo Yamamoto¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

11:45 AM - 12:00 PM

[12a-A29-11] Fabrication and Demonstration of CMOS Inverter and Ring Oscillator Composed of Ultra-Thin Body Poly-Ge p- and n-MISFETs for Stacked Channel 3D-IC

〇Yoshiki Kamata¹, Masahiro Koike¹, Etsuo Kurosawa¹, Masashi Kurosawa^2,³, Hiroyuki Ota¹, Osamu Nakatsuka², Shigeaki Zaima², Tsutomu Tezuka¹ (1.GNC-AIST, 2.Nagoya Univ., 3.JSPS)

Poster presentation

[13a-P14-1~14] 13.4 Si wafer processing /MEMS/Integration technology

Fri. Mar 13, 2015 9:30 AM - 11:30 AM P14 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

△ [13a-P14-1] Crystallzation of Ge Thin Films by Cosputtering of Ge and Au(II)

〇Takatoshi Sugiyama¹, Masao Kamiko², Kentaro Kyuno¹ (1.Shibaura Institute of Technology, 2.IIS,University of Tokyo)

9:30 AM - 11:30 AM

[13a-P14-2] Reduction of parasitic resistance in Ge nMOSFETs with metal/n⁺Ge junctions by two-step P-ion implantation

〇Masahiro Koike¹, Yuuichi Kamimuta¹, Kurosawa Etsuo¹, Tsutomu Tezuka¹ (1.GNC, AIST)

9:30 AM - 11:30 AM

▲ [13a-P14-3] First Trial Fabrication of Poly-Si TFTs using Crystallization-Induction Layers of Yttria-Stabilized Zirconia and Pulsed Laser Annealing Crystallization Methods

〇Lien Mai¹, Masayuki Yamano², Tatsuaki Hirata², Shin-Ichiro Kuroki², Susumu Horita¹ (1.JAIST, 2.Hiroshima Univ.)

9:30 AM - 11:30 AM

△ [13a-P14-4] Controllability of Self-Aligned Planar Metal Double-Gate Four-Terminal LT Poly-Si TFTs on Glass Substrate

〇Hiroki Ohsawa¹, Shun Sasaki¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

9:30 AM - 11:30 AM

[13a-P14-5] CMOS Inverter of CLC LT Poly-Si TFTs with Sputtered HfO₂ Gate Dielectric Layer

〇Tatsuya Meguro¹, Hara Akito¹ (1.Tohoku Gakuin Univ.)

9:30 AM - 11:30 AM

△ [13a-P14-6] Planar Metal Double-Gate LT Poly-Ge TFTs on Glass Substrate

〇Yuya Nishimura¹, Tatsuya Meguro¹, Akito Hara¹ (1.Tohoku Gakuin Univ.)

9:30 AM - 11:30 AM

[13a-P14-7] Evaluation of Resistance for Chip on Chip Bonding using "AlSi/TiN" bumps with ACP

〇Masahiro Akiyama¹, Dali Zhang², Myung-Jae Lee², Edoardo Charbon² (1.NIT, Nagano College, 2.TUDelft)

9:30 AM - 11:30 AM

▲ [13a-P14-8] Finite element method simulation of three-terminal graphene NEMS switches

〇(D)Jothiramalingam Kulothungan¹, Manoharan Muruganathan¹, Hiroshi Mizuta^1,² (1.JAIST, 2.Univ. of Southampton)

9:30 AM - 11:30 AM

[13a-P14-9] Development of Cryogenic Deformable Mirror for Space Infrared Telescopes

〇(M1)Aoi Takahashi¹, Keigo Enya¹, Paul Bierden², Steven Cornelissen², Charlie Lam², Michael Feinberg² (1.ISAS/JAXA, 2.BMC)

9:30 AM - 11:30 AM

[13a-P14-10] Plasmonic glucose sensors embedded inside hydrogels

〇YASUTO SAITO¹, HIROAKI NISIYAMA¹ (1.Yamagata Univ.)

9:30 AM - 11:30 AM

△ [13a-P14-11] Interface characteristics of Si/Si junctions by using surface-activated bonding

〇(B)shoji yamajo¹, masashi morimoto¹, jianbo liang¹, naoteru shigekawa¹ (1.Osaka City Univ.)

9:30 AM - 11:30 AM

△ [13a-P14-12] Stacked Structures of Pb(Zr,Ti)O₃ Thin Films with Photo-Sensitive Polymer

〇Takashi Okubo¹ (1.Univ. Hyogo)

9:30 AM - 11:30 AM

△ [13a-P14-13] The Fabrication Process of Microfluidic Devices Using Polyimide as a Structure and Adhesive Material

〇Ryohei Komiyama¹, Masahiro Kondo¹, Hidetoshi Miyashita¹, Sang-Seok Lee¹ (1.Tottori University)

9:30 AM - 11:30 AM

[13a-P14-14] Alignment method for plural circuits on ununiform deformed board by reticle free exposure apparatus

〇Mitsunori Tone¹, Masahiro Nagano², Hiroshi Kubota¹, Masao Yoshioka², Koji Kosaka³ (1.Graduate School of Kumamoto Univ., 2.Kumamoto Univ., 3.TKC Co. Ltd.)

Oral presentation

[14a-A29-1~11] 13.4 Si wafer processing /MEMS/Integration technology

Sat. Mar 14, 2015 9:00 AM - 12:00 PM A29 (6A-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[14a-A29-1] Formation of Ultrathin SOI Layers with a Uniform Thickness by Photoetching

〇Yuki Miyata¹, Yasunori Nakamukai¹, Cassia Tiemi Azevedo¹, Yasushi Osikane¹, Kentaro Kawai¹, Kenta Arima¹, Mizuho Morita¹ (1.Osaka Univ.)

9:15 AM - 9:30 AM

[14a-A29-2] Variability suppression of FinFETs by milling fin-channel using IBE

〇Takashi Matsukawa¹, Kazuhiko Endo¹, Hiroshi Akasaka², Yasushi Kamiya², Masayoshi Ikeda², Koji Tsunekawa², Takashi Nakagawa², Yongxun Liu¹, Meishoku Masahara¹ (1.AIST, 2.Canon Anelva)

9:30 AM - 9:45 AM

[14a-A29-3] Small-grain titanium nitride film with high work-function by plasma treatment

〇Motomu Degai¹, Masanori Nakayama¹, Kazuhiro Harada¹, Hiroshi Ashihara¹, Keniji Kanayama¹ (1.Hitachi Kokusai Electric)

9:45 AM - 10:00 AM

[14a-A29-4] Effects of Ge substrate orientation on laser doping in phosphoric acid solution

〇Kouta Takahashi¹, Masashi Kurosawa^1,², Hiroshi Ikenoue³, Shigehisa Shibayama^1,⁴, Mitsuo Sakashita¹, Wakana Takeuchi¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,⁵ (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow (PD), 3.Grad. Sch. of ISEE, Kyushu Univ., 4.JSPS Research Fellow (DC), 5.EcoTopia Science Institute, Nagoya Univ)

10:00 AM - 10:15 AM

[14a-A29-5] Antimony diffusion into Ge substrate for n-well formation

〇Ryota Yoneda¹, Keisuke Yamamoto², Hiroshi Nakashima² (1.IGSES, Kyushu Univ, 2.KASTEC, Kyushu Univ.)

10:15 AM - 10:30 AM

△ [14a-A29-6] On the Origin of the Gate Oxide Failure Evaluated by Raman Spectroscopy

〇Ryo Yokogawa¹, Motohiro Tomita^1,³, Toshikazu Mizukoshi², Takehiro Hirano², Kenichiro Kusano², Katsuhiro Sasaki², Atsusi Ogura¹ (1.Meiji Univ., 2.LAPIS Semiconductor Miyagi, 3.JSPS Research Fellow DC)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[14a-A29-7] A New Application of Laser Annealing for High-Performance Power MOSFET

〇YI CHEN¹, TAKASHI NOGUCHI¹, FULVIO MAZZAMUTO², KARIM HUET² (1.University of the Ryukyus, 2.SCREEN Semiconductor Solutions Co., Ltd.)

11:00 AM - 11:15 AM

[14a-A29-8] Correlation between Si/SiO₂ interface state density and indoor absolute humidity

〇Hitoshi Asano¹, Fumito Imura¹, Kazuhiro Koga¹, Sommawan Khumpuang^1,², Shiro Hara^1,² (1.MINIMAL, 2.AIST)

11:15 AM - 11:30 AM

[14a-A29-9] pMOSFET Inverters Fabricated by Full MINIMAL Equipment

〇Fumito Imura¹, Shingo Ura², Yuji Kitayama¹, Kazuhiro Koga¹, Hitoshi Asano¹, Katsuhiko Nakato¹, Sommawan Khumpuang^1,³, Shiro Hara^1,³ (1.MINIMAL, 2.Logic Research, 3.AIST)

11:30 AM - 11:45 AM

[14a-A29-10] nMOSFET Fabrication by Minimal Spin-on Dopant Process

〇Kazuhiro Koga¹, Fumito Imura¹, Hitoshi Asano¹, Sommawan Khumpuang^1,², Shiro Hara^1,² (1.Minimal Fab Development Association, 2.AIST)

11:45 AM - 12:00 PM

[14a-A29-11] MOSFET fabrication on wafers that is refurbished by minimal grinding and polishing machines

〇Norio Umeyama¹, Takashi Yajima¹, Hitoshi Asano¹, Fumito Imura¹, Katsuhiko Nakato¹, Sommawan Khumpuang^1,², Shiro Hara^1,² (1.MINIMAL, 2.AIST)

Oral presentation

[14p-A29-1~8] 13.4 Si wafer processing /MEMS/Integration technology

Sat. Mar 14, 2015 1:00 PM - 3:00 PM A29 (6A-204)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:00 PM - 1:15 PM

[14p-A29-1] Si Crystal Growth by a Focused-Light-Heating FZ Method

〇Shinichi Ikeda^1,², Takeshi Nishimura³, Tetsuya Ozawa⁴, Tohru Nagasawa³, Seiichi Takasu³, Shiro Hara^1,² (1.AIST, 2.MINIMAL, 3.Canon Machinery, 4.Rigaku)

1:15 PM - 1:30 PM

[14p-A29-2] Improvement in Thermal Uniformity of a Half-inch Wafer in Minimal Focused Light Heating Furnace (II)

〇Noriko Miura¹, Takeshi Aizawa^1,², Takeshi Yamada^1,², Takahiro Ito^1,³, Haruki Toonoe¹, Shinichi Ikeda^1,⁴, Yuuki Ishida^1,⁴, Takanori Mikahara¹, Yasuhiro Onishi^1,², Sommawan Khumpuang^1,⁴, Shiro Hara^1,⁴ (1.MINIMAL, 2.YONEKURA, 3.ORIENTAL MOTER, 4.AIST)

1:30 PM - 1:45 PM

[14p-A29-3] Electric properties of thermal oxide formed by minimal resistance furnace(III)

〇Katsuhiko Nakato¹, Fumito Imura¹, Hitoshi Asano¹, Shinnosuke Suzuki^1,³, Shogo Matsuda^1,³, Ayami Yaginuma^1,³, Kiyohiko Morikawa^1,³, Masashi Hattori^1,³, Shinichi Ikeda^1,², Sommawan Khumpuang^1,², Shiro Hara^1,² (1.MINIMAL, 2.AIST, 3.Koyo Thermo System)

1:45 PM - 2:00 PM

[14p-A29-4] Evaluation of rapid thermal characteristics using a minimal laser heating furnace

〇kazushige sato¹, Haruki Toonoe¹, Takashi Chiba^1,³, Masao Terada^1,³, Katsuhiko Nakato¹, Noriko Miura¹, Shinichi Ikeda^1,², Sommawan Khumpuang^1,², Shiro Hara^1,² (1.Minimal Fab Development Association, 2.AIST, 3.Sakaguchi E.H VOC Corp)

2:00 PM - 2:15 PM

[14p-A29-5] Half-Inch Silicon CVD Reactor Using Concentrated Infrared Light Heater (4)

〇NING LI¹, HITOSHI HABUKA¹, TAKANORI MIKAHARA², SHIN-ICHI IKEDA^2,³, YUUKI ISHIDA^2,³, SHIRO HARA^2,³ (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

2:15 PM - 2:30 PM

[14p-A29-6] Minimal spin coating by controlling local temperature in spin cup

〇Shuuji Okuda¹, Sho Takeuchi^1,², Yoshihisa Sensu^1,², Takahiro Ito^1,³, Sommawan Khumpuang^1,⁴, Shiro Hara^1,⁴ (1.MINIMAL, 2.LTJ, 3.OrientalMotor, 4.AIST)

2:30 PM - 2:45 PM

[14p-A29-7] Fluctuation factor analysis of a lithography process with MINIMAL equipment

〇Yuuji Kitayama¹, Syuuji Okuda¹, Yasuhide Higashino¹, Kouyu Houchi¹, Sommawan Khumpuang^1,², Shiro Hara^1,² (1.MINIMAL, 2.AIST)

2:45 PM - 3:00 PM

[14p-A29-8] Cleanroom-Free Minimal Air Circulation System for PLAD (IV)

〇Takashi Yajima¹, Masaharu Yasui¹, Khumpuang Sommawan^1,², Hitoshi Maekawa^1,², Shiro Hara^1,² (1.MINIMAL, 2.AIST)

Sessions

13 Semiconductors » 13.4 Si wafer processing /MEMS/Integration technology

[11a-A29-1~13] 13.4 Si wafer processing /MEMS/Integration technology

△ [11a-A29-4] Printing deposition of thin Cu films using nanosilicon ballistic electron emtter

△ [11a-A29-8] Dioxide filled deep silicon-trenches for through-silicon via silicon island arrays

[11p-A29-1~13] 13.4 Si wafer processing /MEMS/Integration technology

△ [11p-A29-1] Tactile, Friction, and Temperature Sensor Array for Artificial Electronic Skin

△ [11p-A29-2] Electronic Skin with high selectivity against a bending of a substrate

△ [11p-A29-7] PDMS-made Bacteria Trapping Chip Using Beads III -Time Dependence of Fluorescence Intensity for Various Bacteria-

▲ [11p-A29-8] Two-Dimensional Redox Imaging Employing Integrated Square Wave Voltammetric Pulse Generator Circuit

[12a-A29-1~11] 13.4 Si wafer processing /MEMS/Integration technology

[13a-P14-1~14] 13.4 Si wafer processing /MEMS/Integration technology

△ [13a-P14-1] Crystallzation of Ge Thin Films by Cosputtering of Ge and Au(II)

▲ [13a-P14-3] First Trial Fabrication of Poly-Si TFTs using Crystallization-Induction Layers of Yttria-Stabilized Zirconia and Pulsed Laser Annealing Crystallization Methods

△ [13a-P14-4] Controllability of Self-Aligned Planar Metal Double-Gate Four-Terminal LT Poly-Si TFTs on Glass Substrate

△ [13a-P14-6] Planar Metal Double-Gate LT Poly-Ge TFTs on Glass Substrate

▲ [13a-P14-8] Finite element method simulation of three-terminal graphene NEMS switches

△ [13a-P14-11] Interface characteristics of Si/Si junctions by using surface-activated bonding

△ [13a-P14-12] Stacked Structures of Pb(Zr,Ti)O3 Thin Films with Photo-Sensitive Polymer

△ [13a-P14-13] The Fabrication Process of Microfluidic Devices Using Polyimide as a Structure and Adhesive Material

[14a-A29-1~11] 13.4 Si wafer processing /MEMS/Integration technology

△ [14a-A29-6] On the Origin of the Gate Oxide Failure Evaluated by Raman Spectroscopy

[14p-A29-1~8] 13.4 Si wafer processing /MEMS/Integration technology

Authentication

△ [13a-P14-12] Stacked Structures of Pb(Zr,Ti)O₃ Thin Films with Photo-Sensitive Polymer