[14p-D7-1~6] 17.4 Device applications

[14p-D7-4] Characterization of effective mobility in MoS₂ FET with HfO₂ high-k insulator

〇Naruki Ninomiya¹, Takahiro Mori², Noriyuki Uchida², Toshitaka Kubo², Eiichiro Watanabe³, Daiju Tsuya³, Satoshi Moriyama³, Masahoshi Tanaka¹, Atsushi Ando² (1.Yokohama Nat. Univ., 2.AIST, 3.NIMS)

Keywords:MoS2,field effect transistor,transition metal dichalcogenides