Oral presentation

[20a-H112-1~10] 15.5 Group IV crystals and alloys

Sun. Mar 20, 2016 9:00 AM - 11:30 AM H112 (H)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[20a-H112-1] Compressive stress stimulation effect on Au induced crystallization for amorphous Si_xGe_1-x films on SiO₂ substrate

〇Kinta Kusano¹, Kazuki Kudo¹, Takuya Sakai¹, Shinichi Motoyama², Yutaka Kusuda², Masahiro Furuta², Nobuyuki Naka³, Tomoko Numata³, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT, Kumamoto college, 2.Samco, 3.Horiba)

9:15 AM - 9:30 AM

[20a-H112-2] Ag-induced crystallization of amorphous Ge thin films on glass substrates

〇Ryota Yoshimine¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

9:30 AM - 9:45 AM

[20a-H112-3] Formation of High Mobility GSOI by Low Temperature Solid-Phase Crystallization

〇Yuki Kai¹, Ryo Matsumura^1,2, Taizoh Sadoh¹, Masanobu Miyao¹ (1.Kyushu Univ., 2.JSPS Research Fellow)

9:45 AM - 10:00 AM

[20a-H112-4] Metal-induced crystallization of a-GeSn on insulating substrate
-Sn doping into Ge by lateral crystallization-

〇Takatsugu Sakai¹, Ryo Matsumura^1,2, Taizoh Sadoh¹, Masanobu Miyao¹ (1.Kyushu Univ., 2.JSPS Research Fellow)

10:00 AM - 10:15 AM

△ [20a-H112-5] Non-Thermal Equilibrium Growth of Amorphous GeSn on Insulator by Repetition Laser Annealing
- Cooling Rate Dependence of Supersaturated Sn Concentration -

〇Kenta Moto¹, Ryo Matsumura^1,2, Taizo Sadoh¹, Hiroshi Ikenoue¹, Masanobu Miyao¹ (1.ISEE, Kyushu Univ., 2.JSPS Research Fellow)

10:15 AM - 10:30 AM

△ [20a-H112-6] Effect of Ge growth temperature on C-mediated Ge dot formation via solid-phase epitaxy using thermal annealing

〇(B)Kaito Takeshima¹, Yuhki Itoh², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad. Sch. Eng. Tohoku Univ.)

10:30 AM - 10:45 AM

△ [20a-H112-7] Low-temperature solid-phase epitaxial formation of Ge quantum dots on Si(100) using C mediation

〇(D)Yuhki Itoh¹, Kaito Takeshima², Tomoyuki Kawashima^1,2, Katsuyoshi Washio^1,2 (1.Grad. Sch. Eng., Tohoku Univ., 2.Tohoku Univ.)

10:45 AM - 11:00 AM

△ [20a-H112-8] Optimization of C coverage in Ge quantum dot formation by using C-Si reaction on Si(100)

〇Kosuke Yasuta¹, Yuhki Satoh², Yuhki Itoh², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad. Sch. Eng. Tohoku Univ.)

11:00 AM - 11:15 AM

[20a-H112-9] Evaluation of Stress in Thin Strained-Si:C on a Si substrate by Oil-immersion Raman Spectroscopy

〇Shotaro Yamamoto¹, Kazuma Takeuchi¹, Seiya Ishihara¹, Atsushi Ogura¹ (1.Meiji Univ.)

11:15 AM - 11:30 AM

[20a-H112-10] Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si_1-xC_x heterostructures utilizing the defect control by ion implantation

〇You Arisawa¹, Kentarou Sawano², Noritaka Usami¹ (1.Nagoya Univ., 2.Tokyo City Univ.)

Oral presentation

[20p-H112-1~12] 15.5 Group IV crystals and alloys

Sun. Mar 20, 2016 1:15 PM - 4:30 PM H112 (H)

Keisuke Arimoto(Univ. of Yamanashi)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[20p-H112-1] Influence of Strain in GeSiSn Layer on Crystallinity of GeSiSn/GeSn/GeSiSn Double-Heterostructure

〇Masahiro Fukuda¹, Takashi Yamaha^1,2, Takanori Asano^1,2, Syunsuke Fujinami¹, Yosuke Shimura¹, Masashi Kurosawa^1,3, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ, 2.JSPS Research Fellow, 3.IMass, Nagoya Univ.)

1:30 PM - 1:45 PM

△ [20p-H112-2] Thermal stabilization of Sn atom in GeSn based alloy thin films by strain control

〇Yosuke Shimura¹, Takanori Asano^1,2, Takashi Yamaha^1,2, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Grad. School of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.IMaSS, Nagoya Univ.)

1:45 PM - 2:00 PM

△ [20p-H112-3] The Phonon Deformation Potentials for Strained Ge_1-xSn_x Derived by Oil-Immersion Raman Spectroscopy

〇Kazuma Takeuchi¹, Kohei Suda¹, Shotaro Yamamoto¹, Ryo Yokogawa¹, Atsushi Ogura¹ (1.Meiji Univ.)

2:00 PM - 2:15 PM

△ [20p-H112-4] Molecular Dynamics Study on Phonon Simulation in SiGe with Using Molecular Orbital Method

〇Motohiro Tomita^1,2,3, Atsushi Ogura², Takanobu Watanabe¹ (1.Waseda Univ., 2.Meiji Univ., 3.JSPS Res. Fellow PD)

2:15 PM - 2:30 PM

△ [20p-H112-5] Evaluation of Anisotropic Stress State in Uniaxially Strained-Ge Fabricated by Selective Ion Implantation Technique

〇Shotaro Yamamoto¹, Kazuma Takeuchi¹, Daisuke Kosemura¹, Shiori Konoshima², Kentarou Sawano², Atsushi Ogura¹ (1.Meiji Univ., 2.Adv. Res. Lab., Tokyo City Univ.)

2:45 PM - 3:00 PM

△ [20p-H112-6] Characterization of Local Strain in MOCVD-Ge₁₋_xSn_x/Ge Fin Structures by using Microdiffraction

〇Yuuki Inuzuka¹, Shinichi Ike^1,2, Tomoya Washizu¹, Wakana Takeuchi¹, Yosuke Shimura¹, Yasuhiko Imai³, Shigeru Kimura³, Osamu Nakatsuka¹, Shigeaki Zaima^1,4 (1.Nagoya Univ., 2.JSPS Research Fellow, 3.JASRI, 4.IMaSS, Nagoya Univ.)

3:00 PM - 3:15 PM

[20p-H112-7] Tomographic mapping analysis of high Ge content SiGe films with compositionally graded layers by X-ray microdiffraction

〇Kazuki Shida¹, Shotaro Takeuchi¹, Yasuhiko Imai², Shigeru Kimura², Akira Sakai¹ (1.Osaka Univ., 2.JASRI/SPring-8)

3:15 PM - 3:30 PM

△ [20p-H112-8] Epitaxial growth of in situ P-doped Ge thin films by MOCVD

〇Shinichi IKE^1,2, Yosuke SHIMURA¹, Wakana TAKEUCHI¹, Osamu NAKATSUKA¹, Shigeaki ZAIMA^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS Research Fellow, 3.IMaSS, Nagoya Univ.)

3:30 PM - 3:45 PM

[20p-H112-9] Epitaxial growth of single crystalline silicon-germanium thin film on silicon substrates
by solid phase crystallization

〇(M1)Alaa Hassan Hamdoh¹, Kyota Kuroiwa¹, Tetsuya Kaneko¹, Masao Isomura¹ (1.Tokai Univ.)

3:45 PM - 4:00 PM

[20p-H112-10] Growth of Ge(111) thin films on atomically stepped c-plane sapphire substretae

〇Yamato Kawaguchi¹, Yuhki Itoh¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

4:00 PM - 4:15 PM

[20p-H112-11] Homogeneous Bulk SiGe Crystals Grown by the TLZ Method
(1) Increase of Crystal Diameter and Improvement of Crystal Quality

〇Kyoichi Kinoshita¹, Yasutomo Arai¹ (1.JAXA)

4:15 PM - 4:30 PM

[20p-H112-12] Homogeneous Bulk SiGe Crystals Grown by the TLZ Method (2) Hall Mobility

〇Tatsuro Maeda¹, Hiroyuki Hattori¹, Wen Hsin Chang¹, Kyoichi Kinoshita², Yasutomo Arai² (1.AIST, 2.JAXA)

Poster presentation

[21p-P9-1~9] 15.5 Group IV crystals and alloys

Mon. Mar 21, 2016 1:30 PM - 3:30 PM P9 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[21p-P9-1] Density functional theory calculations on atomic configurations of C and Sn atoms in Si crystal for solar cells

〇Kento Toyosaki¹, Koji Sueoka¹ (1.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[21p-P9-2] XAFS studies on GeSn thin-film grown by MOCVD method

〇Koji Usuda¹, Masahiko Yoshiki¹, Kohei Suda², Atsushi Ogura², Mitsuhiro Tomita¹ (1.Toshiba Corp., 2.Meiji Univ.)

1:30 PM - 3:30 PM

[21p-P9-3] Formation of GeSiSn films on Ge substrates by sputter epitaxy method

〇Kazuaki Haneda¹, Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Yoshiyuki Suda¹ (1.Tokyo Univ. Agric. Technol., 2.NICT)

1:30 PM - 3:30 PM

[21p-P9-4] Cu-induced poly-crystallization of electrodeposited Ge film on flexible substrate

〇Yasutaka Uchida¹, Tomoko Funayama¹, Yoshiaki Kogure¹, Wenchang Yeh² (1.Teikyo Univ. of Sci., 2.Shimane Univ.)

1:30 PM - 3:30 PM

[21p-P9-5] Fabrication of Uniaxially Strained SiGe-on-Insulator (SGOI) via Wafer Bonding

〇(M2)Takuya Matsuo¹, Kentarou Sawano¹ (1.Tokyo City Univ.)

1:30 PM - 3:30 PM

▲ [21p-P9-6] Investigation of Σ3 Generation on Random Grain Boundary in Multicrystalline Silicon

〇(P)Xianjia Luo¹, Jun Chen¹, Takashi Sekiguchi¹ (1.National Institute for Materials Science (NIMS))

1:30 PM - 3:30 PM

[21p-P9-7] Morphologies of tensile-strained Si/relaxed SiGe/Si(110) heterostructures employing vicinal substrate and device characteristic

〇naoto utsuyama¹, kei sato¹, takane yamada¹, keisuke arimoto¹, junji yamanaka¹, kiyokazu nakagawa¹, kousuke hara¹, noritaka usami², kentaro sawano³ (1.CCST Univ. of Yamanashi, 2.Nagoya Univ., 3.ARL Tokyo City Univ.)

1:30 PM - 3:30 PM

[21p-P9-8] Influence of microtwins on surface morphology of tensile-strained Si/SiGe/Si(110) heterostructures

〇Kei Sato¹ (1.Univ. of yamanashi)

1:30 PM - 3:30 PM

▲ [21p-P9-9] Formation of Large-grain polycrystalline Si Layer on Quartz by Al-induced Crystallization for Thin-Film Solar Cells

Joko Suwardy^1,2, Thiyagu Subramani², 〇Wipakorn Jevasuwan², Kaoru Toko¹, Takashi Suemasu¹, Naoki Fukata^1,2 (1.Univ. of Tsukuba, 2.NIMS)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[20a-H112-1~10] 15.5 Group IV crystals and alloys

[20a-H112-1] Compressive stress stimulation effect on Au induced crystallization for amorphous Si_xGe_1-x films on SiO₂ substrate

[20a-H112-2] Ag-induced crystallization of amorphous Ge thin films on glass substrates

[20a-H112-3] Formation of High Mobility GSOI by Low Temperature Solid-Phase Crystallization

[20a-H112-4] Metal-induced crystallization of a-GeSn on insulating substrate
-Sn doping into Ge by lateral crystallization-

△ [20a-H112-5] Non-Thermal Equilibrium Growth of Amorphous GeSn on Insulator by Repetition Laser Annealing
- Cooling Rate Dependence of Supersaturated Sn Concentration -

△ [20a-H112-6] Effect of Ge growth temperature on C-mediated Ge dot formation via solid-phase epitaxy using thermal annealing

△ [20a-H112-7] Low-temperature solid-phase epitaxial formation of Ge quantum dots on Si(100) using C mediation

△ [20a-H112-8] Optimization of C coverage in Ge quantum dot formation by using C-Si reaction on Si(100)

[20a-H112-9] Evaluation of Stress in Thin Strained-Si:C on a Si substrate by Oil-immersion Raman Spectroscopy

[20a-H112-10] Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si_1-xC_x heterostructures utilizing the defect control by ion implantation

[20p-H112-1~12] 15.5 Group IV crystals and alloys

[20p-H112-1] Influence of Strain in GeSiSn Layer on Crystallinity of GeSiSn/GeSn/GeSiSn Double-Heterostructure

△ [20p-H112-2] Thermal stabilization of Sn atom in GeSn based alloy thin films by strain control

△ [20p-H112-3] The Phonon Deformation Potentials for Strained Ge_1-xSn_x Derived by Oil-Immersion Raman Spectroscopy

△ [20p-H112-4] Molecular Dynamics Study on Phonon Simulation in SiGe with Using Molecular Orbital Method

△ [20p-H112-5] Evaluation of Anisotropic Stress State in Uniaxially Strained-Ge Fabricated by Selective Ion Implantation Technique

△ [20p-H112-6] Characterization of Local Strain in MOCVD-Ge₁₋_xSn_x/Ge Fin Structures by using Microdiffraction

[20p-H112-7] Tomographic mapping analysis of high Ge content SiGe films with compositionally graded layers by X-ray microdiffraction

△ [20p-H112-8] Epitaxial growth of in situ P-doped Ge thin films by MOCVD

[20p-H112-9] Epitaxial growth of single crystalline silicon-germanium thin film on silicon substrates
by solid phase crystallization

[20p-H112-10] Growth of Ge(111) thin films on atomically stepped c-plane sapphire substretae

[20p-H112-11] Homogeneous Bulk SiGe Crystals Grown by the TLZ Method
(1) Increase of Crystal Diameter and Improvement of Crystal Quality

[20p-H112-12] Homogeneous Bulk SiGe Crystals Grown by the TLZ Method (2) Hall Mobility

[21p-P9-1~9] 15.5 Group IV crystals and alloys

[21p-P9-1] Density functional theory calculations on atomic configurations of C and Sn atoms in Si crystal for solar cells

[21p-P9-2] XAFS studies on GeSn thin-film grown by MOCVD method

[21p-P9-3] Formation of GeSiSn films on Ge substrates by sputter epitaxy method

[21p-P9-4] Cu-induced poly-crystallization of electrodeposited Ge film on flexible substrate

[21p-P9-5] Fabrication of Uniaxially Strained SiGe-on-Insulator (SGOI) via Wafer Bonding

▲ [21p-P9-6] Investigation of Σ3 Generation on Random Grain Boundary in Multicrystalline Silicon

[21p-P9-7] Morphologies of tensile-strained Si/relaxed SiGe/Si(110) heterostructures employing vicinal substrate and device characteristic

[21p-P9-8] Influence of microtwins on surface morphology of tensile-strained Si/SiGe/Si(110) heterostructures

▲ [21p-P9-9] Formation of Large-grain polycrystalline Si Layer on Quartz by Al-induced Crystallization for Thin-Film Solar Cells

Authentication

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[20a-H112-1~10] 15.5 Group IV crystals and alloys

△ [20a-H112-5] Non-Thermal Equilibrium Growth of Amorphous GeSn on Insulator by Repetition Laser Annealing- Cooling Rate Dependence of Supersaturated Sn Concentration -

△ [20a-H112-6] Effect of Ge growth temperature on C-mediated Ge dot formation via solid-phase epitaxy using thermal annealing

△ [20a-H112-7] Low-temperature solid-phase epitaxial formation of Ge quantum dots on Si(100) using C mediation

△ [20a-H112-8] Optimization of C coverage in Ge quantum dot formation by using C-Si reaction on Si(100)

[20p-H112-1~12] 15.5 Group IV crystals and alloys

△ [20p-H112-2] Thermal stabilization of Sn atom in GeSn based alloy thin films by strain control

△ [20p-H112-3] The Phonon Deformation Potentials for Strained Ge1-xSnx Derived by Oil-Immersion Raman Spectroscopy

△ [20p-H112-4] Molecular Dynamics Study on Phonon Simulation in SiGe with Using Molecular Orbital Method

△ [20p-H112-5] Evaluation of Anisotropic Stress State in Uniaxially Strained-Ge Fabricated by Selective Ion Implantation Technique

△ [20p-H112-6] Characterization of Local Strain in MOCVD-Ge1−xSnx/Ge Fin Structures by using Microdiffraction

△ [20p-H112-8] Epitaxial growth of in situ P-doped Ge thin films by MOCVD

[21p-P9-1~9] 15.5 Group IV crystals and alloys

▲ [21p-P9-6] Investigation of Σ3 Generation on Random Grain Boundary in Multicrystalline Silicon

▲ [21p-P9-9] Formation of Large-grain polycrystalline Si Layer on Quartz by Al-induced Crystallization for Thin-Film Solar Cells

Authentication

△ [20a-H112-5] Non-Thermal Equilibrium Growth of Amorphous GeSn on Insulator by Repetition Laser Annealing
- Cooling Rate Dependence of Supersaturated Sn Concentration -

△ [20p-H112-3] The Phonon Deformation Potentials for Strained Ge_1-xSn_x Derived by Oil-Immersion Raman Spectroscopy

△ [20p-H112-6] Characterization of Local Strain in MOCVD-Ge₁₋_xSn_x/Ge Fin Structures by using Microdiffraction