〇Mizuki Oka¹, Mitsuru Inada², Tadashi Saitoh² (1.Graduate School of Science and Engineering, Kansai Univ, 2.Faculty of Engineering Science, Kansai Univ)

11:15 AM - 11:30 AM

[21a-S323-8] Initial Metal Thickness Dependence in Electroless Gold Plated Nanogap Electrodes

〇(M1)Masaomi Koshimura¹, Yasuo Azuma¹, Yutaka Majima¹ (1.Tokyo Tech.)

11:30 AM - 11:45 AM

▲ [21a-S323-9] Molecular Single-Electron Transistor Device using Sn-Porphyrin
Protected Gold Nanoparticles

〇(M1)Pipit Uky Vivitasari¹, Yasuo Azuma¹, Masanori Sakamoto², Toshiharu Teranishi², Yutaka Majima¹ (1.Tokyo Inst. of Tech., 2.Kyoto Univ.)

11:45 AM - 12:00 PM

[21a-S323-10] Nanoparticle Single-Electron Transistor with Floating Gate Electrode

〇Yasuo Azuma¹, Masanori Sakamoto², Toshiharu Teranishi², Yutaka Majima¹ (1.Tokyo Tech., 2.Kyoto Univ.)

12:00 PM - 12:15 PM

▲ [21a-S323-11] Coulomb Staircase on Rigid Carbon-bridged Oligo(phenylenevinylene) between Electroless Au plated Nanogap Electrodes

〇(D)Chun Ouyang^1,2, Yousoo Kim², Kohei Hashimoto³, Hayato Tsuji³, Eiichi Nakamura³, Yutaka Majima¹ (1.Tokyo Tech., 2.RIKEN, 3.Univ. of Tokyo)

Oral presentation

[21p-S323-1~7] 9.3 Nanoelectronics

Mon. Mar 21, 2016 4:00 PM - 5:45 PM S323 (S3)

Seiya Kasai(Hokkaido Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

4:00 PM - 4:15 PM

[21p-S323-1] Analysis of photoresponses in Au nanoparticle single-electron transistor with a copper phthalocyanine derivative

〇Makoto Yamamoto¹, Yasuo Azuma², Yutaka Majima², Masanori Sakamoto³, Toshiharu Teranishi³, Hisao Ishii^1,4, Yutaka Noguchi⁵ (1.AIS Chiba Univ., 2.Tokyo Tech., 3.Kyoto Univ., 4.CFS Chiba Univ., 5.Meiji Univ.)

4:15 PM - 4:30 PM

[21p-S323-2] Observation of Coulomb Blockade on B and P Codoped Si Nanocrystals

〇Yasuhiro Higashikawa¹, Yasuo Azuma², Yutaka Majima², Shinya Kano¹, Minoru Fujii¹ (1.Kobe Univ., 2.Tokyo Tech.)

4:30 PM - 4:45 PM

[21p-S323-3] A single electron device fabricated by repeated dispersion of gold nano particles

〇Masataka Moriya¹, Huong Tran¹, Kazuhiko Matsumoto¹, Hiroshi Shimada¹, Yasuo Kimura², Ayumi Hirano-Iwata³, Yoshinao Mizugaki¹ (1.Univ. of Electro-Comm., 2.Tokyo Univ. Technology, 3.Tohoku Univ.)

4:45 PM - 5:00 PM

[21p-S323-4] Integration of Nanogaps-Based Single-Electron Transistors by Field-Emission-Induced Electromigration

〇(B)Kazuki Inoue¹, Tomoyuki Ito¹, Kazutaka Okada¹, Kazuki Takikawa¹, Mitsuki Ito¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

5:00 PM - 5:15 PM

[21p-S323-5] Study of Electrical Characteristics of Single-Electron Transistors Using Field-Emission Induced Electromigration Under Low Temperature

〇Tomoyuiki Ito¹, Mitsuki Ito¹, Kazuki Takikawa¹, Kazutaka Okada¹, Kazuki Inoue¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

5:15 PM - 5:30 PM

[21p-S323-6] Tuning of Conductance of Au Nanowires Using FPGA-based Ultrafast Feedback-Controlled Electromigration

〇Yuma Kanamaru¹, Yu Katogi¹, Masayuki Shiomura¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

5:30 PM - 5:45 PM

[21p-S323-7] Control of Quantized Conductance Using Electromigration with Real-Time Operating System (RTOS)

〇Noriaki Numakura¹, Shusuke Sato¹, Yuma Kanamaru¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[20p-P8-1~6] 9.3 Nanoelectronics

[20p-P8-1] Design of New Single-Electron Circuit Mimicking behavior of Slilme-Mold

[20p-P8-2] Improvement of performance of single-electron associative memory circuit by
harnessing thermal noise and its evaluation

△ [20p-P8-3] Analytical Study on a Common-Gate Quadruple-Dot Single-Electron-Pump with Asymmetric Gate Capacitances

△ [20p-P8-4] GaAs-based nanostructure formation by high-precision digital wet etching technique

[20p-P8-5] Development of RT plasma excited atomic layer deposition for oxide coating on nano particles

[20p-P8-6] Room-temperature atomic layer deposition of zirconium oxide using plasma exited water vapor.

[21a-S323-1~11] 9.3 Nanoelectronics

[21a-S323-1] Design of new single-electron information-processing circuit mimicking behavior of swarm of honeybees

[21a-S323-2] Design of Single-Electoron Convolutional Neural Network Circuit

△ [21a-S323-3] A Computing Architecture Using Ising Spin Model Implemented on FPGA for Solving Combinational Optimization Problems

△ [21a-S323-4] Natural Computing Architecture with 2D Ising Spin Model for Optimization Problem

△ [21a-S323-5] Detection and characterization of surface electron traps in a GaAs-based nanowire by a metal probe-induced local surface potential modulation

[21a-S323-6] Study on molecule dispersion using electrostatic coating method for identification of single molecules

△ [21a-S323-7] Coloring properties of silver deposition-based electrochromic device with porous AZO electrode

[21a-S323-8] Initial Metal Thickness Dependence in Electroless Gold Plated Nanogap Electrodes

▲ [21a-S323-9] Molecular Single-Electron Transistor Device using Sn-Porphyrin
Protected Gold Nanoparticles

[21a-S323-10] Nanoparticle Single-Electron Transistor with Floating Gate Electrode

▲ [21a-S323-11] Coulomb Staircase on Rigid Carbon-bridged Oligo(phenylenevinylene) between Electroless Au plated Nanogap Electrodes

[21p-S323-1~7] 9.3 Nanoelectronics

[21p-S323-1] Analysis of photoresponses in Au nanoparticle single-electron transistor with a copper phthalocyanine derivative

[21p-S323-2] Observation of Coulomb Blockade on B and P Codoped Si Nanocrystals

[21p-S323-3] A single electron device fabricated by repeated dispersion of gold nano particles

[21p-S323-4] Integration of Nanogaps-Based Single-Electron Transistors by Field-Emission-Induced Electromigration

[21p-S323-5] Study of Electrical Characteristics of Single-Electron Transistors Using Field-Emission Induced Electromigration Under Low Temperature

[21p-S323-6] Tuning of Conductance of Au Nanowires Using FPGA-based Ultrafast Feedback-Controlled Electromigration

[21p-S323-7] Control of Quantized Conductance Using Electromigration with Real-Time Operating System (RTOS)

Authentication

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[20p-P8-1~6] 9.3 Nanoelectronics

△ [20p-P8-3] Analytical Study on a Common-Gate Quadruple-Dot Single-Electron-Pump with Asymmetric Gate Capacitances

△ [20p-P8-4] GaAs-based nanostructure formation by high-precision digital wet etching technique

[21a-S323-1~11] 9.3 Nanoelectronics

△ [21a-S323-3] A Computing Architecture Using Ising Spin Model Implemented on FPGA for Solving Combinational Optimization Problems

△ [21a-S323-4] Natural Computing Architecture with 2D Ising Spin Model for Optimization Problem

△ [21a-S323-5] Detection and characterization of surface electron traps in a GaAs-based nanowire by a metal probe-induced local surface potential modulation

△ [21a-S323-7] Coloring properties of silver deposition-based electrochromic device with porous AZO electrode

▲ [21a-S323-9] Molecular Single-Electron Transistor Device using Sn-PorphyrinProtected Gold Nanoparticles

▲ [21a-S323-11] Coulomb Staircase on Rigid Carbon-bridged Oligo(phenylenevinylene) between Electroless Au plated Nanogap Electrodes

[21p-S323-1~7] 9.3 Nanoelectronics

Authentication

▲ [21a-S323-9] Molecular Single-Electron Transistor Device using Sn-Porphyrin
Protected Gold Nanoparticles