Oral presentation

[20a-F214-1~9] 15.5 Group IV crystals and alloys

Tue. Mar 20, 2018 9:45 AM - 12:00 PM F214 (61-214)

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9:45 AM - 10:00 AM

[20a-F214-1] [Young Scientist Presentation Award Speech] Control of Surface Morphology and Ge Segregation in Hetero-Epitaxial Ag/Ge(111) Structure by Thermal Annealing

〇Koichi Ito¹, Akio Ohta^1,2, Masashi Kurosawa^1,2, Masaaki Araidai^1,2,3, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.Inst. Adv. Res., Nagoya Univ., 3.IMaSS, Nagoya Univ.)

10:00 AM - 10:15 AM

[20a-F214-2] Formation of germanene on atomically stepped c-face sapphire substrate

〇Kosuke Yasuta¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

10:15 AM - 10:30 AM

△ [20a-F214-3] Structure Evaluation of Laterally Graded SiGe Wires for Thermoelectric Devices

〇Ryo Yokogawa^1,2, Shuichiro Hashimoto³, Kota Takahashi^2,4, Shunsuke Oba³, Motohiro Tomita^1,2,3, Masashi Kurosawa^4,5,6, Takanobu Watanabe³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Res. Fellow, 3.Waseda Univ., 4.Grad. Sch. of Eng., Nagoya Univ., 5.JST-PRESTO, 6.IAR, Nagoya Univ.)

10:30 AM - 10:45 AM

[20a-F214-4] Carbon-mediated formation of multi-stacked Ge quantum dot layer via solid-phase epitaxy

〇Yuhki Inoue¹, Kaito Takeshima², Yuhki Itoh^2,3, Tomoyuki Kawashima², Katsuyoshi Washio² (1.Tohoku Univ., 2.Grad. Sch. Eng. Tohoku Univ., 3.JSPS Research Fellow DC)

10:45 AM - 11:00 AM

[20a-F214-5] Effects of post-annealing for in-situ n-doped Ge-on-Si

〇Yuta Kumazawa¹, Xuejun Xu¹, Kentaro Sawano¹, Takuya Maruizumi¹ (1.Tokyo City Univ.)

11:00 AM - 11:15 AM

△ [20a-F214-6] Optoelectronic Characterization of Ge_1−x−ySi_xSn_y/Ge_1−xSn_x/Ge_1−x−ySi_xSn_y Double-Heterostructure

〇Masahiro Fukuda¹, Denis Rainko², Mitsuo Sakashita¹, Masashi Kurosawa¹, Dan Buca², Osamu Nakatsuka^1,3, Shigeaki Zaima³ (1.Grad. Sch. of Eng., Nagoya Univ., 2.Forschungszentrum Juelich, 3.IMaSS, Nagoya Univ.)

11:15 AM - 11:30 AM

[20a-F214-7] Effects of kinds of dopant on heavy doping for Ge₁₋_xSn_x layers using pulsed laser annealing in water

〇Kouta Takahashi^1,2, Masashi Kurosawa^1,3,4, Hiroshi Ikenoue⁵, Mitsuo Sakashita¹, Osamu Nakatsuka^1,6, Shigeaki Zaima⁶ (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS, 3.IAR, Nagoya Univ., 4.JST-PRESTO, 5.Dept. of Gigaphoton Next GLP, Grad. Sch. of ISEE, Kyushu Univ., 6.IMaSS, Nagoya Univ.)

11:30 AM - 11:45 AM

△ [20a-F214-8] Tomographic Analysis of Lattice Plane Microstructure in the Depth Direction of High-Ge-Content SiGe Films with Compositionally Graded Layers Using Nanobeam X-Ray Diffraction

〇Kazuki Shida¹, Shotaro Takeuchi¹, Tetsuya Tohei¹, Yasuhiko Imai², Shigeru Kimura², Andreas Schulze³, Matty Caymax³, Akira Sakai¹ (1.Osaka Univ., 2.JASRI, 3.imec)

11:45 AM - 12:00 PM

[20a-F214-9] Evaluation of Anisotropic lattice parameters of Ge_1-xSn_x Mesa Structures by Reciprocal Space Mapping

〇Ichiro Hirosawa¹, Tatsumi Murakami², Kohei Suda², Yuki Takahashi², Kazutoshi Yoshioka², Ryo Yokogawa^2,3, Atsushi Ogura² (1.JASRI, 2.Meiji Univ., 3.JSPS Research Fellow DC)

Oral presentation

[20p-F214-1~9] 15.5 Group IV crystals and alloys

Tue. Mar 20, 2018 1:30 PM - 3:45 PM F214 (61-214)

Masashi Kurosawa(Nagoya Univ.)

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▲：英語発表
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1:30 PM - 1:45 PM

[20p-F214-1] [Young Scientist Presentation Award Speech] Solid-phase crystallization for high carrier mobility GeSn thin film on glass

〇Kenta Moto^1,2, Ryota Yoshimine¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

1:45 PM - 2:00 PM

[20p-F214-2] Formation of a large-grained thick Ge film using Al-induced crystallized Ge as a seed layer

〇Takeshi Nishida¹, Mitsuki Nakata¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

2:00 PM - 2:15 PM

[20p-F214-3] Effects of two-step annealing on low temperature SPC of a-Ge/Au/SiO₂

〇Noboru Shimizu¹, Takanori Mori¹, Kento Okamoto¹, Takuya Sakai¹, Kenichiro Takakura¹, Isao Tsunoda¹ (1.NIT Kumamoto College)

2:15 PM - 2:30 PM

[20p-F214-4] Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization:
Effect of Ge Thin Under-Layer Insertion

〇(M1)Hongmiao Gao¹, Masanobu Miyao¹, Taizoh Sadoh¹ (1.Kyushu Univ.)

2:30 PM - 2:45 PM

[20p-F214-5] Effects of Si Layer Insertion on Solid-Phase Crystallization of Sn Doped Ge/Insulator: Mechanism of Carrier Mobility Improvement

〇Chang Xu¹, Hongmiao Gao¹, Takayuki Sugino¹, Masanobu Miyao¹, Taizoh Sadoh¹ (1.Kyushu Univ.)

2:45 PM - 3:00 PM

[20p-F214-6] Enhancement of Low-Temperature Solid Phase Crystallization of Amorphous GeSn on Insulator by Weak Laser Irradiation

Takayuki Sugino¹, Kenta Moto¹, Ryo Matsumura¹, Masanobu Miyao¹, Hiroshi Ikenoue¹, 〇Taizoh Sadoh¹ (1.Kyushu Univ.)

3:00 PM - 3:15 PM

▼ [20p-F214-7] Growth of Au/Sn-catalyzed Ge_1-xSn_x nanowires with high Sn content (~5 at.%)

〇Yonglie Sun^1,2, Ryo Matsumura¹, Wipakorn Jevasuwan¹, Naoki Fukata^1,2 (1.NIMS, 2.Univ. Tsukuba)

3:15 PM - 3:30 PM

△ [20p-F214-8] Transmission electron microscopy study on structures of amorphous GeSn and its structural changes on thermal annealing

〇(M1C)Masashi Higashiyama¹, Toshiki Kimura¹, Manabu Ishimaru¹, Masayuki Okugawa², Ryuusuke Nakamura² (1.Kyushu Institute of Technology, 2.Osaka Prefecture University)

3:30 PM - 3:45 PM

[20p-F214-9] Epitaxial growth of SiGe layer on Si substrate by printing and firing of Al-Ge mixed paste

〇(M1)Shogo Fukami¹, Shota Masuda¹, Yoshihiko Nakagawa¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Marwan Dhamrin², Noritaka Usami¹ (1.Nagoya Univ., 2.Toyo Aluminium)

Poster presentation

[19p-P10-1~6] 15.5 Group IV crystals and alloys

Mon. Mar 19, 2018 4:00 PM - 6:00 PM P10 (P)

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4:00 PM - 6:00 PM

[19p-P10-1] Suppression of parallel conduction by P doping in strained Ge channel structures

〇Kousuke Sawada¹, Kouji Takasi¹, Maksym Myronov², Kentarou Sawano¹ (1.Tokyo city Univ., 2.Warwick Univ.)

4:00 PM - 6:00 PM

[19p-P10-2] Fabrication of lattice-matched GeSiSn/Ge hole-tunneling double-barrier resonant tunneling diodes

〇Shota Kurihara¹, Minoru Wakiya¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (1.Tokyo Univ. Agric. Technol.)

4:00 PM - 6:00 PM

[19p-P10-3] Critical layer thickness of strained Si with (110) surface orientation

〇Keisuke Arimoto¹, Atsushi Onogawa¹, Takane Yamada¹, Kosuke Hara¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

4:00 PM - 6:00 PM

▲ [19p-P10-4] Formation of c-SiGe graded layer on c-Si substrate by thermal treatment

〇(M1C)NORRASHIDAH RASHID¹, Tetsuya Kaneko¹, Masao Isomura¹ (1.Tokai Univ.)

4:00 PM - 6:00 PM

[19p-P10-5] Evaluation of critical thickness for Si_1-xGe_x layers grown on Ge(111) substrates

〇(M2)Yu Sakamoto¹, Michihiro Yamada², Kohei Hamaya², Kentarou Sawano¹ (1.Tokyo City Univ, 2.Osaka Univ)

4:00 PM - 6:00 PM

[19p-P10-6] Fabrication of Al₂O₃/strained Ge channel structure by MBE and ALD and electrical characterizations

〇(M2)Keijiro Sato¹, Eriko Shigesawa¹, Hiroto Iwanaga¹, Myronot Maksym², Kentaro Sawano¹ (1.Tokyo City Univ., 2.Warwick Univ.)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[20a-F214-1~9] 15.5 Group IV crystals and alloys

[20a-F214-1] [Young Scientist Presentation Award Speech] Control of Surface Morphology and Ge Segregation in Hetero-Epitaxial Ag/Ge(111) Structure by Thermal Annealing

[20a-F214-2] Formation of germanene on atomically stepped c-face sapphire substrate

△ [20a-F214-3] Structure Evaluation of Laterally Graded SiGe Wires for Thermoelectric Devices

[20a-F214-4] Carbon-mediated formation of multi-stacked Ge quantum dot layer via solid-phase epitaxy

[20a-F214-5] Effects of post-annealing for in-situ n-doped Ge-on-Si

△ [20a-F214-6] Optoelectronic Characterization of Ge_1−x−ySi_xSn_y/Ge_1−xSn_x/Ge_1−x−ySi_xSn_y Double-Heterostructure

[20a-F214-7] Effects of kinds of dopant on heavy doping for Ge₁₋_xSn_x layers using pulsed laser annealing in water

△ [20a-F214-8] Tomographic Analysis of Lattice Plane Microstructure in the Depth Direction of High-Ge-Content SiGe Films with Compositionally Graded Layers Using Nanobeam X-Ray Diffraction

[20a-F214-9] Evaluation of Anisotropic lattice parameters of Ge_1-xSn_x Mesa Structures by Reciprocal Space Mapping

[20p-F214-1~9] 15.5 Group IV crystals and alloys

[20p-F214-1] [Young Scientist Presentation Award Speech] Solid-phase crystallization for high carrier mobility GeSn thin film on glass

[20p-F214-2] Formation of a large-grained thick Ge film using Al-induced crystallized Ge as a seed layer

[20p-F214-3] Effects of two-step annealing on low temperature SPC of a-Ge/Au/SiO₂

[20p-F214-4] Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization:
Effect of Ge Thin Under-Layer Insertion

[20p-F214-5] Effects of Si Layer Insertion on Solid-Phase Crystallization of Sn Doped Ge/Insulator: Mechanism of Carrier Mobility Improvement

[20p-F214-6] Enhancement of Low-Temperature Solid Phase Crystallization of Amorphous GeSn on Insulator by Weak Laser Irradiation

▼ [20p-F214-7] Growth of Au/Sn-catalyzed Ge_1-xSn_x nanowires with high Sn content (~5 at.%)

△ [20p-F214-8] Transmission electron microscopy study on structures of amorphous GeSn and its structural changes on thermal annealing

[20p-F214-9] Epitaxial growth of SiGe layer on Si substrate by printing and firing of Al-Ge mixed paste

[19p-P10-1~6] 15.5 Group IV crystals and alloys

[19p-P10-1] Suppression of parallel conduction by P doping in strained Ge channel structures

[19p-P10-2] Fabrication of lattice-matched GeSiSn/Ge hole-tunneling double-barrier resonant tunneling diodes

[19p-P10-3] Critical layer thickness of strained Si with (110) surface orientation

▲ [19p-P10-4] Formation of c-SiGe graded layer on c-Si substrate by thermal treatment

[19p-P10-5] Evaluation of critical thickness for Si_1-xGe_x layers grown on Ge(111) substrates

[19p-P10-6] Fabrication of Al₂O₃/strained Ge channel structure by MBE and ALD and electrical characterizations

Authentication

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[20a-F214-1~9] 15.5 Group IV crystals and alloys

△ [20a-F214-3] Structure Evaluation of Laterally Graded SiGe Wires for Thermoelectric Devices

△ [20a-F214-6] Optoelectronic Characterization of Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny Double-Heterostructure

△ [20a-F214-8] Tomographic Analysis of Lattice Plane Microstructure in the Depth Direction of High-Ge-Content SiGe Films with Compositionally Graded Layers Using Nanobeam X-Ray Diffraction

[20p-F214-1~9] 15.5 Group IV crystals and alloys

▼ [20p-F214-7] Growth of Au/Sn-catalyzed Ge1-xSnx nanowires with high Sn content (~5 at.%)

△ [20p-F214-8] Transmission electron microscopy study on structures of amorphous GeSn and its structural changes on thermal annealing

[19p-P10-1~6] 15.5 Group IV crystals and alloys

▲ [19p-P10-4] Formation of c-SiGe graded layer on c-Si substrate by thermal treatment

Authentication

△ [20a-F214-6] Optoelectronic Characterization of Ge_1−x−ySi_xSn_y/Ge_1−xSn_x/Ge_1−x−ySi_xSn_y Double-Heterostructure

▼ [20p-F214-7] Growth of Au/Sn-catalyzed Ge_1-xSn_x nanowires with high Sn content (~5 at.%)