Oral presentation

[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C212 (C212)

Naoki Fukata(NIMS), Kazuhisa Torigoe(SUMCO), Wataru Sugimura(SUMCO Corporation)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-C212-1] Quality of silicon substrate and point defects (2) From Precipitate Engineering to Point Defect Engineering

〇Naohisa Inoue^1,2 (1.Tokyo U. Agri. & Technol., 2.Osaka Pref. U.)

9:15 AM - 9:30 AM

[18a-C212-2] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (15) Annealing behavior of NO shallow thermal donors

〇Naohisa Inoue^1,2, Shuichi Okuda², Shuichi Kawamata² (1.Tokyo U. Agri. & Technol., 2.Osaka Pref. U.)

9:30 AM - 9:45 AM

[18a-C212-3] Measurement of carbon concentration in silicon crystal
(XIX) 2nd generation infrared absorption standard measurement procedure

〇Naohisa Inoue^1,2, Shuichi Okuda², Shuichi Kawamata² (1.Tokyo U. Agri. & Technol., 2.Osaka Pref. U.)

9:45 AM - 10:00 AM

[18a-C212-4] On the Interpretation of the Formation Volume of Defects in Crystal Growth

〇Koun Shirai¹ (1.ISIR, Osaka Univ.)

10:00 AM - 10:15 AM

[18a-C212-5] Point defect reaction in the heavily doped n type CZ-Si during crystal growth process

〇Kozo Nakamura¹, Shingo Narimatsu², Takeshi Senda², Susumu Maeda² (1.Okayama Pref.Unv., 2.GrobalWefers Japan)

10:30 AM - 10:45 AM

[18a-C212-6] Formation of vacancy and oxygen complexes in Si wafers by ultra-high temperature RTP

〇Haruo Sudo^1,2, Koji Sueoka³ (1.GlobalWafers Japan, 2.Graduate School of Computer Science and Systems Eng., Okayama Pref. Univ., 3.Faculty of Computer Science and Systems Eng., Okayama Pref. Univ.)

10:45 AM - 11:00 AM

[18a-C212-7] Numerical calculation of dislocation behavior in Si substrate during thermal process

〇Ryohei Sato¹, Toshihiko Takakura², Kazuo Ito², Takuya Saraya², Toshiro Hiramoto², Koichi Kakimoto^1,3, Shin-ichi Nisizawa^1,3 (1.Kyushu Univ., 2.IIS Tokyo Univ., 3.RIAM Kyushu Univ.)

11:00 AM - 11:15 AM

▲ [18a-C212-8] 3D Numerical investigation on 200 mm (8-inch) floating zone (FZ) silicon process

〇(P)Xuefeng Han¹, Satoshi Nakano¹, Xin Liu¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

11:15 AM - 11:30 AM

▲ [18a-C212-9] Transient global modeling of oxygen and carbon segregations during the pulling process of Czochralski silicon crystal growth

〇Xin Liu¹, Xue-Feng Han¹, Satoshi Nakano¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

11:30 AM - 11:45 AM

[18a-C212-10] Numerical simulation on oxygen transfer in Si melt under a cusp-shaped magnetic field using a 3D global model

〇Daisuke Murakami¹, Liu Xin², Satoshi Nakano², Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.Kyushu Univ. RIAM)

11:45 AM - 12:00 PM

[18a-C212-11] Impact of heating rate during the melting process for poly-silicon on carbon concentration in Czochralski silicon crystals

〇Kazuma Takahashi¹, Hiroyuki Tsubota¹, Yuta Nagai¹, Yoshiaki Abe¹, Hisashi Matsumura¹ (1.GlobalWafers Japan)

Oral presentation

[18p-C212-1~6] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 18, 2019 1:30 PM - 3:00 PM C212 (C212)

Takuo Sasaki(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[18p-C212-1] Round-Robin Test of Photoluminescence Method after Electron Irradiation for Quantifying Low-Level Carbon in Silicon

〇Michio Tajima^1,2,3, Shuichi Samata^1,4, Satoko Nakagawa^1,5, Jun Oriyama¹, Noriyuki Ishihara^1,6 (1.JSNM, 2.ISAS/JAXA, 3.Meiji Univ., 4.SUMCO, 5.GWJ, 6.MIZUHO-IR)

1:45 PM - 2:00 PM

[18p-C212-2] Observation of dislocations inside buffer layers of IMM single junction InGaAs solar cells by multiphoton excitation photoluminescence (II)

〇AKIO OGURA¹, Tomoyuki Tanikawa², Tatsuya Takamoto³, Ryuji Oshima⁴, Takeyoshi Sugaya⁴, Mitsuru Imaizumi¹ (1.JAXA, 2.Osaka Univ., 3.SHARP Corp., 4.AIST)

2:00 PM - 2:15 PM

[18p-C212-3] Phase-transition dynamics of Ytterbium hydride thin films

〇Toshihiro Yoshizumi¹, Keigo Koshiba¹, Daiki Fujii¹, Satoru Kitsunai¹, Kosuke Igarashi¹, Teru Yoshizawa¹, Masamichi Sakai¹, Osamu Nakamura² (1.Saitama University, 2.Okayama University of Science)

2:15 PM - 2:30 PM

[18p-C212-4] Effect of oxygen precipitation on the electrical characteristics of ion-implanted bifacial silicon solar cell

〇Katsuto Tanahashi¹, Tomihisa Tachibana¹, Masaaki Moriya¹, Yasuhiro Kida¹, Satoshi Utsunomiya¹, Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST)

2:30 PM - 2:45 PM

△ [18p-C212-5] Oxygen Effect Analysis of Copper Gettering in Hydrocarbon Molecular Ion Impanted Region Using Atom Probe Tomography

〇Satoshi Shigematsu¹, Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Koji Kobayashi¹, Akihiro Suzuki¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

2:45 PM - 3:00 PM

[18p-C212-6] First-principles analysis on the behavior of metal atom near dopant complex in Si crystal

〇Hiroki Nagakura^1,2, Koji Sueoka³ (1.Sony Semiconductor Manufacturing, 2.Graduate School of Okayama Pref. Univ., 3.Okayama Pref. Univ.)

Poster presentation

[18p-PB4-1~12] 15.7 Crystal characterization, impurities and crystal defects

Wed. Sep 18, 2019 4:00 PM - 6:00 PM PB4 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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4:00 PM - 6:00 PM

△ [18p-PB4-1] First principles analysis of H impact on intrinsic point defect behavior
in growing CZ-Si crystal

〇(M1)Takuya Kusunoki¹, Koji Sueoka², Wataru Sugimura³, Masataka Hourai³ (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO)

4:00 PM - 6:00 PM

△ [18p-PB4-2] Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

〇(M1)Motoharu Taniguchi¹, Koji Sueoka², Masataka Hourai³ (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO)

4:00 PM - 6:00 PM

△ [18p-PB4-3] Band Structure Analysis of the Bulk Lifetime-Control Defects
in Silicon Crystals for Power Device Application

〇(M2)Daiki Tsuchiya¹, Koji Sueoka², Hidekazu Yamamoto³ (1.Grad-school of OPU, 2.Okayama Pref. Univ., 3.Chiba Tech.)

4:00 PM - 6:00 PM

△ [18p-PB4-4] First principles analysis on the impact of surface oxide film on the stability and diffusion barrier in the depth direction of metal atoms

〇(M2)Noriyuki Nonoda¹, Koji Sueoka² (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ.)

4:00 PM - 6:00 PM

△ [18p-PB4-5] Influence of Stress on the Stability of Metal Impurities in Si Crystal

〇(M1)Hiroya Iwashiro¹, Koji Sueoka², Kazuhisa Torigoe³, Toshiaki Ono³ (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO CORPORATION)

4:00 PM - 6:00 PM

[18p-PB4-6] Consideration of the determining mechanism of oxygen solubility in a Si crystal

〇Eiji Kamiyama¹, Koji Sueoka² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

4:00 PM - 6:00 PM

[18p-PB4-7] Investigation of optical properties of point defects in copper iodide

〇Satoshi Koyasu¹, Naoto Umezawa², Akira Yamaguchi³, Masahiro Miyauchi³ (1.Hosei Univ., 2.Samsung, 3.Tokyo Tech.)

4:00 PM - 6:00 PM

▲ [18p-PB4-8] Local Atomic structure and electronic structure of dopant in β-Ga₂O₃

〇Jiayi Tang¹, Ryutaro Nishibata¹, Ryota Miyawaki¹, Okyyun Seo², Akitaka Yoshigoe³, Kazushi Miki¹ (1.Univ. of Hyogo, 2.NIMS, 3.JAEA)

4:00 PM - 6:00 PM

[18p-PB4-9] Evaluation of SiC-SBD by multifunctional scanning probe microscope 3

〇(M1)Keita Nakayama¹, Sho Masuda¹, Nobuo Sato¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

4:00 PM - 6:00 PM

[18p-PB4-10] Evaluation of strained SiC wafer by Raman scattering spectroscopy 2

〇(M2)Yuuki Ogura¹, Shinsuke Sakai² (1.Chiba Inst. of Tech, 2.Success Ltd)

4:00 PM - 6:00 PM

[18p-PB4-11] Characterization of Carrier Recombination Levels in Nitrogen δ-Doped GaAs Superlattices by Two- Wavelength Excited Photoluminescence Method

〇Kota Nagata¹, Kamata Norihiko¹, Yagi Syuuhei¹, Yaguchi Hiroyuki¹ (1.Saitama Univ.)

4:00 PM - 6:00 PM

[18p-PB4-12] Evaluation of defects in CVD diamond by measurement of multi-photon luminescence

〇Hiroaki Ito¹, Syusaku Terakawa¹, Shoko Odake², Hiroshi Takahashi³, Shingo Ono¹ (1.Nagoya Institute of Technology, 2.GIA Tokyo Godo Kaisha, 3.Gemological Institute of America)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1] Quality of silicon substrate and point defects (2) From Precipitate Engineering to Point Defect Engineering

[18a-C212-2] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (15) Annealing behavior of NO shallow thermal donors

[18a-C212-3] Measurement of carbon concentration in silicon crystal
(XIX) 2nd generation infrared absorption standard measurement procedure

[18a-C212-4] On the Interpretation of the Formation Volume of Defects in Crystal Growth

[18a-C212-5] Point defect reaction in the heavily doped n type CZ-Si during crystal growth process

[18a-C212-6] Formation of vacancy and oxygen complexes in Si wafers by ultra-high temperature RTP

[18a-C212-7] Numerical calculation of dislocation behavior in Si substrate during thermal process

▲ [18a-C212-8] 3D Numerical investigation on 200 mm (8-inch) floating zone (FZ) silicon process

▲ [18a-C212-9] Transient global modeling of oxygen and carbon segregations during the pulling process of Czochralski silicon crystal growth

[18a-C212-10] Numerical simulation on oxygen transfer in Si melt under a cusp-shaped magnetic field using a 3D global model

[18a-C212-11] Impact of heating rate during the melting process for poly-silicon on carbon concentration in Czochralski silicon crystals

[18p-C212-1~6] 15.7 Crystal characterization, impurities and crystal defects

[18p-C212-1] Round-Robin Test of Photoluminescence Method after Electron Irradiation for Quantifying Low-Level Carbon in Silicon

[18p-C212-2] Observation of dislocations inside buffer layers of IMM single junction InGaAs solar cells by multiphoton excitation photoluminescence (II)

[18p-C212-3] Phase-transition dynamics of Ytterbium hydride thin films

[18p-C212-4] Effect of oxygen precipitation on the electrical characteristics of ion-implanted bifacial silicon solar cell

△ [18p-C212-5] Oxygen Effect Analysis of Copper Gettering in Hydrocarbon Molecular Ion Impanted Region Using Atom Probe Tomography

[18p-C212-6] First-principles analysis on the behavior of metal atom near dopant complex in Si crystal

[18p-PB4-1~12] 15.7 Crystal characterization, impurities and crystal defects

△ [18p-PB4-1] First principles analysis of H impact on intrinsic point defect behavior
in growing CZ-Si crystal

△ [18p-PB4-2] Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

△ [18p-PB4-3] Band Structure Analysis of the Bulk Lifetime-Control Defects
in Silicon Crystals for Power Device Application

△ [18p-PB4-4] First principles analysis on the impact of surface oxide film on the stability and diffusion barrier in the depth direction of metal atoms

△ [18p-PB4-5] Influence of Stress on the Stability of Metal Impurities in Si Crystal

[18p-PB4-6] Consideration of the determining mechanism of oxygen solubility in a Si crystal

[18p-PB4-7] Investigation of optical properties of point defects in copper iodide

▲ [18p-PB4-8] Local Atomic structure and electronic structure of dopant in β-Ga₂O₃

[18p-PB4-9] Evaluation of SiC-SBD by multifunctional scanning probe microscope 3

[18p-PB4-10] Evaluation of strained SiC wafer by Raman scattering spectroscopy 2

[18p-PB4-11] Characterization of Carrier Recombination Levels in Nitrogen δ-Doped GaAs Superlattices by Two- Wavelength Excited Photoluminescence Method

[18p-PB4-12] Evaluation of defects in CVD diamond by measurement of multi-photon luminescence

Authentication

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

▲ [18a-C212-8] 3D Numerical investigation on 200 mm (8-inch) floating zone (FZ) silicon process

▲ [18a-C212-9] Transient global modeling of oxygen and carbon segregations during the pulling process of Czochralski silicon crystal growth

[18p-C212-1~6] 15.7 Crystal characterization, impurities and crystal defects

△ [18p-C212-5] Oxygen Effect Analysis of Copper Gettering in Hydrocarbon Molecular Ion Impanted Region Using Atom Probe Tomography

[18p-PB4-1~12] 15.7 Crystal characterization, impurities and crystal defects

△ [18p-PB4-1] First principles analysis of H impact on intrinsic point defect behaviorin growing CZ-Si crystal

△ [18p-PB4-2] Effect of nitrogen doping on intrinsic point defect behavior in growing CZ-Si crystal

△ [18p-PB4-3] Band Structure Analysis of the Bulk Lifetime-Control Defectsin Silicon Crystals for Power Device Application

△ [18p-PB4-4] First principles analysis on the impact of surface oxide film on the stability and diffusion barrier in the depth direction of metal atoms

△ [18p-PB4-5] Influence of Stress on the Stability of Metal Impurities in Si Crystal

▲ [18p-PB4-8] Local Atomic structure and electronic structure of dopant in β-Ga2O3

Authentication

△ [18p-PB4-1] First principles analysis of H impact on intrinsic point defect behavior
in growing CZ-Si crystal

△ [18p-PB4-3] Band Structure Analysis of the Bulk Lifetime-Control Defects
in Silicon Crystals for Power Device Application

▲ [18p-PB4-8] Local Atomic structure and electronic structure of dopant in β-Ga₂O₃