Poster presentation

[11p-PA5-1~3] 15.5 Group IV crystals and alloys

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PA5 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[11p-PA5-1] Evaluation of strain in strained Si films formed on the (110) surface using Raman spectroscopy

〇Keisuke Arimoto¹, Atsushi Onogawa¹, Shingo Saito¹, Kosuke Hara¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

1:30 PM - 3:30 PM

[11p-PA5-2] Fully compressively strained SiGe thin film formation technique using Sputter Epitaxy method

〇Shota Nozaki¹ (1.Tokyo Univ. of Agric. &Technol.)

1:30 PM - 3:30 PM

[11p-PA5-3] Si Epitaxial Growth on Epitaxial Graphene using Ultra Thin AlN Intermediate Layer

〇Taiji Terai¹, Daiki Ishimaru, Yuta Kamada¹, Tomoya Takeuchi¹, Akihiro Hashimoto¹ (1.Fukui Univ.)

Oral presentation

[12a-M113-1~8] 15.5 Group IV crystals and alloys

Tue. Mar 12, 2019 9:30 AM - 11:30 AM M113 (H113)

Kentarou Sawano(Tokyo City Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 9:45 AM

[12a-M113-1] Characterization of crystalline damages near ion-implanted Ge surface
using Raman spectroscopy method

〇Hidetaka Sofue¹, Masahiro Fukuda¹, Shigehisa Shibayama¹, Osamu Nakatsuka^1,2, Shigeaki Zaima³ (1.Nagoya Univ., 2.MaSS, Nagoya Univ., 3.IIFS, Nagoya Univ.)

9:45 AM - 10:00 AM

△ [12a-M113-2] Evaluation of Strain Relaxation in Ge_1-xSn_x Mesa Structure Using Reciprocal Space Mapping

〇(M1)Yuki Takahashi¹, Ryo Yokogawa^1,2, Ichiro Hirosawa³, Kohei Suda¹, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow, 3.Japan Synchrotron Radiation Research Institute (JASRI))

10:00 AM - 10:15 AM

[12a-M113-3] Evaluation of Anisotropic Stress Distribution for Laterally Graded SiGe Wires by Oil-Immersion Raman Spectroscopy

〇Ryo Yokogawa^1,2, Kouta Takahashi^2,4, Motohiro Tomita^1,3, Masashi Kurosawa^4,5,6, Takanobu Watanabe³, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow, 3.Waseda Univ., 4.Grad. Sch. of Eng., Nagoya Univ., 5.JST-PRESTO, 6.IAR, Nagoya Univ.)

10:15 AM - 10:30 AM

[12a-M113-4] Model fitting for pseudo-dielectric functions of 2D and 3D Ge films on SiO₂ substrate

〇Housei Akazawa¹ (1.NTT Device Innovation Center)

10:30 AM - 10:45 AM

△ [12a-M113-5] Evaluation of Strain Relaxation in Patterned Carbon Doped Silicon by Water Immersion Raman Spectroscopy

〇Kazutoshi Yoshioka¹, Ryo Yokogawa^1,2, Naomi Sawamoto¹, Atsushi Ogura¹ (1.Meiji University, 2.JSPS Research Fellow DC)

10:45 AM - 11:00 AM

[12a-M113-6] Chemical Analysis of Ultrathin Ge Segregated on Hetero-epitaxial Al/Ge(111)

〇Masato Kobayashi¹, Akio Ota¹, Masashi Kurosawa¹, Masaaki Araidai¹, Noriyuki Taoka², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.AIST GaN-OIL)

11:00 AM - 11:15 AM

△ [12a-M113-7] Comprehensive study of carbon/metal solid-phase reaction for multilayer graphene synthesis

〇Yoshiki Nakajima¹, Hiromasa Murata¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

11:15 AM - 11:30 AM

[12a-M113-8] Probability of epitaxial growth of silicon polytypes

〇Reo Kita¹, Masayuki Toyoda¹, Susumu Saito¹ (1.TIT)

Oral presentation

[12p-M113-1~9] 15.5 Group IV crystals and alloys

Tue. Mar 12, 2019 1:15 PM - 3:30 PM M113 (H113)

Kaoru Toko(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:30 PM

[12p-M113-1] Low temperature fabrication of a crystalline Ge layer by gold-induced layer
exchange crystallization (GIC) method with a Ge-Au co-evaporation film

〇Koki Kakoi¹, Kennji Kasahara¹, Noboru Shimizu², Isao Tunoda², Takasi Manago¹ (1.Fukuoka Univ., 2.NIT KUmamoto college)

1:30 PM - 1:45 PM

[12p-M113-2] Electrical properties of GIC grown Ge thin films

Hidenori Higashi¹, Kenji Kasahara², Kohei Kudo¹, Shinya Yamada¹, Takeshi Kanashima¹, Isao Tsunoda³, Hiroshi Nakashima⁴, 〇Kohei Hamaya¹ (1.Osaka Univ., 2.Fukuoka Univ., 3.NIT Kumamoto College, 4.Kyushu Univ. GIC)

1:45 PM - 2:00 PM

[12p-M113-3] Electrical properties of GIC grown Ge thin film transistors

Hidenori Higashi¹, Kenji Kasahara², Keisuke Yamamoto³, Kohei Kudo¹, Shinya Yamada¹, Takeshi Kanashima¹, Hiroshi Nakashima⁴, 〇Kohei Hamaya¹ (1.Osaka Univ., 2.Fukuoka Univ., 3.Kyushu Univ., 4.Kyushu Univ. GIC)

2:00 PM - 2:15 PM

▼ [12p-M113-4] Aluminum-induced crystallization of Si (111) on highly mismatched crystalline substrates

〇(PC)Mel Hainey¹, Eddie (Chenhui) Zhou², Noritaka Usami¹ (1.Nagoya Univ., 2.UCLA)

2:15 PM - 2:30 PM

[12p-M113-5] Effect of Si substrate orientation on epitaxial growth of SiGe by printing and firing

〇(D)Masahiro Nakahara^1,4, Shogo Fukami¹, Mel F. Hainey, Jr.¹, Yoshihiko Nakagawa¹, Keisuke Arimoto², Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Kensaku Maeda³, Kozo Fujiwara³, Marwan Dhamrin⁴, Noritaka Usami¹ (1.Nagoya Univ., 2.CCST, Univ. Yamanashi, 3.IMR, Tohoku Univ., 4.Toyal)

2:30 PM - 2:45 PM

△ [12p-M113-6] Effects of GeSn Deposition Temperature and Wire Pattern on Nucleation-controlled Liquid-phase Crystallization

〇Keitaro Inoue¹, Youki Wada¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

[12p-M113-7] Crystal growth of Ge and GeSn thin films on glass substrates by CW laser annealing

〇Ryo Matsumura¹, Wipakorn Jevasuwan¹, Naoki Fukata¹ (1.NIMS MANA)

3:00 PM - 3:15 PM

[12p-M113-8] Preventing formation of twins in Ge(111) thin film growth on c-plane sapphire substrate

〇(B)Ko Miyazaki¹, Fumiyasu Ohtake², Takeru Okada², Tomoyuki Kawashima², Katsuyoshi Washio² (1.Sch.Eng.,Tohoku Univ., 2.Grad.Sch.Eng.,Tohoku Univ.)

3:15 PM - 3:30 PM

[12p-M113-9] Effects of insertion of amorphous layer for bonding of Ge on glass

〇Hirofumi Ono¹, Yutaka Takafuji¹, Kentarou Sawano¹ (1.Tokyou City Univ)

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[11p-PA5-1~3] 15.5 Group IV crystals and alloys

[11p-PA5-1] Evaluation of strain in strained Si films formed on the (110) surface using Raman spectroscopy

[11p-PA5-2] Fully compressively strained SiGe thin film formation technique using Sputter Epitaxy method

[11p-PA5-3] Si Epitaxial Growth on Epitaxial Graphene using Ultra Thin AlN Intermediate Layer

[12a-M113-1~8] 15.5 Group IV crystals and alloys

[12a-M113-1] Characterization of crystalline damages near ion-implanted Ge surface
using Raman spectroscopy method

△ [12a-M113-2] Evaluation of Strain Relaxation in Ge_1-xSn_x Mesa Structure Using Reciprocal Space Mapping

[12a-M113-3] Evaluation of Anisotropic Stress Distribution for Laterally Graded SiGe Wires by Oil-Immersion Raman Spectroscopy

[12a-M113-4] Model fitting for pseudo-dielectric functions of 2D and 3D Ge films on SiO₂ substrate

△ [12a-M113-5] Evaluation of Strain Relaxation in Patterned Carbon Doped Silicon by Water Immersion Raman Spectroscopy

[12a-M113-6] Chemical Analysis of Ultrathin Ge Segregated on Hetero-epitaxial Al/Ge(111)

△ [12a-M113-7] Comprehensive study of carbon/metal solid-phase reaction for multilayer graphene synthesis

[12a-M113-8] Probability of epitaxial growth of silicon polytypes

[12p-M113-1~9] 15.5 Group IV crystals and alloys

[12p-M113-1] Low temperature fabrication of a crystalline Ge layer by gold-induced layer
exchange crystallization (GIC) method with a Ge-Au co-evaporation film

[12p-M113-2] Electrical properties of GIC grown Ge thin films

[12p-M113-3] Electrical properties of GIC grown Ge thin film transistors

▼ [12p-M113-4] Aluminum-induced crystallization of Si (111) on highly mismatched crystalline substrates

[12p-M113-5] Effect of Si substrate orientation on epitaxial growth of SiGe by printing and firing

△ [12p-M113-6] Effects of GeSn Deposition Temperature and Wire Pattern on Nucleation-controlled Liquid-phase Crystallization

[12p-M113-7] Crystal growth of Ge and GeSn thin films on glass substrates by CW laser annealing

[12p-M113-8] Preventing formation of twins in Ge(111) thin film growth on c-plane sapphire substrate

[12p-M113-9] Effects of insertion of amorphous layer for bonding of Ge on glass

Authentication

Sessions

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[11p-PA5-1~3] 15.5 Group IV crystals and alloys

[12a-M113-1~8] 15.5 Group IV crystals and alloys

△ [12a-M113-2] Evaluation of Strain Relaxation in Ge1-xSnx Mesa Structure Using Reciprocal Space Mapping

△ [12a-M113-5] Evaluation of Strain Relaxation in Patterned Carbon Doped Silicon by Water Immersion Raman Spectroscopy

△ [12a-M113-7] Comprehensive study of carbon/metal solid-phase reaction for multilayer graphene synthesis

[12p-M113-1~9] 15.5 Group IV crystals and alloys

▼ [12p-M113-4] Aluminum-induced crystallization of Si (111) on highly mismatched crystalline substrates

△ [12p-M113-6] Effects of GeSn Deposition Temperature and Wire Pattern on Nucleation-controlled Liquid-phase Crystallization

Authentication

△ [12a-M113-2] Evaluation of Strain Relaxation in Ge_1-xSn_x Mesa Structure Using Reciprocal Space Mapping