Oral presentation

[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N305 (Oral)

Masashi Kato(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-N305-1] [Young Scientist Presentation Award Speech] Effect of beam current on the formation of defects by high-temperature implantation of Mg ions into GaN

〇Yuta Ito¹, Hirotaka Watanabe², Yuto Ando², Manato Deki⁴, Emi Kano², Shugo Nitta², Yoshio Honda², Nobuyuki Ikarashi², Atsushi Tanaka^2,3, Hiroshi Amano^2,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.NIMS, 4.VBL Nagoya Univ., 5.ARC Nagoya Univ.)

9:15 AM - 9:30 AM

[11a-N305-2] Evaluation of activation for p-type GaN by channeled implantation

〇Atsushi Suyama¹, Hitoshi Kawanowa¹, Hideaki Minagawa¹, Masahiko Aoki¹ (1.Ion Technology Center Co., Ltd)

9:30 AM - 9:45 AM

[11a-N305-3] Study of Mg activation process in Mg-implanted GaN by means of positron annihilation

〇Akira Uedono¹, R. Tanaka², S. Takashima², K. Ueno², M. Edo², K. Shima³, K. Kojima³, S.F. Chichibu³, S. Ishibashi⁴ (1.Univ. of Tsukuba, 2.Fuji Electric, 3.IMRAM-Tohoku Univ., 4.AIST)

9:45 AM - 10:00 AM

△ [11a-N305-4] Spatially resolved CL of p-type ion-implanted GaN using vacancy-guided Mg diffusion

〇Kohei Shima¹, Ryo Tanaka², Shinya Takashima², Katsunori Ueno², Masaharu Edo², Kazunobu Kojima¹, Akira Uedono³, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Fuji Electric, 3.Univ. of Tsukuba)

10:00 AM - 10:15 AM

[11a-N305-5] Evaluation of acceptor activation rate of Mg/N-ion-implanted GaN annealed at 1400°C under normal pressure

〇Masato Omori¹, Kenta Watanabe², Taisei Miyazaki¹, Maito Shiraishi¹, Ryusei Wada¹, Takashi Okawa² (1.Oita Univ., 2.MIRISE Technologies)

10:15 AM - 10:30 AM

[11a-N305-6] PL characteristics of electron-irradiated and Mg/N-ion-implanted GaN

〇Maito Shiraishi¹, Taisei Miyazaki¹, Ryusui Wada¹, Kenta Watanabe², Takashi Okawa², Masato Omori¹ (1.Oita Univ., 2.MIRISE Technologies)

10:45 AM - 11:00 AM

△ [11a-N305-7] Nitrogen-displacement-related hole traps in homoepitaxial p-type GaN

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

11:00 AM - 11:15 AM

[11a-N305-8] Investigation of process damage on GaN surface by using PL and XPS

〇Takumi Yonemura¹, Yoshihiro Saito¹ (1.Sumitomo Electric)

11:15 AM - 11:30 AM

[11a-N305-9] Dynamic observation of oxidation on GaN surface by real-time XPS under irradiating oxidation gas

〇Masatomo Sumiya¹, Yasutaka Tsuda², Tetsuya Sakamoto², Masato Sumita³, Liwen Sang¹, Yoshitomo Harada¹, Aki Tominaga², Akitaka Yoshigoe² (1.NIMS, 2.JAEA, 3.KIKEN AIP)

11:30 AM - 11:45 AM

[11a-N305-10] Suraface morphology of Si-doped GaN sputtered layer on N-polar GaN substrate

〇Shinji Yamada¹, Masanori Shirai², Hiroki Kobayashi², Ryuichiro Kamimura², Tetsu Kachi³, Jun Suda^1,3 (1.Nagoya Univ., 2.ULVAC, 3.Nagoya Univ. IMaSS)

11:45 AM - 12:00 PM

[11a-N305-11] Reacive Etching of InGaN with HI Neutral-Beam Etching

〇(M2)Takahiro Sawada¹, Takahiro Ishihara¹, Daisuke Ohori¹, XueLun Wang^3,4, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST, 4.IMaSS, Nagoya Univ.)

Oral presentation

[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization

Sat. Sep 11, 2021 1:30 PM - 4:15 PM N305 (Oral)

Hiroshi Yano(Univ. of Tsukuba)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[11p-N305-1] Investigation of leakage current and threshold voltage instability in NO nitrided 4H-SiC(11-20) MOS devices

〇Takato Nakanuma¹, Yu Iwakata¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST, 3.JAEA)

1:45 PM - 2:00 PM

△ [11p-N305-2] Investigation of nitrogen profiles and interface properties of SiO₂/non-basal-plane 4H-SiC interfaces annealed in NO

〇Takato Nakanuma¹, Yu Iwakata¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka univ., 2.AIST)

2:00 PM - 2:15 PM

[11p-N305-3] Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO₂interface

〇Toru Akiyama¹, Tsunashi Shimizu¹, Tomonori Ito¹, Hiroyuki Kageshima², Kenji Shiraishi³ (1.MIe Univ., 2.Shimane Univ., 3.Nagoya Univ.)

2:15 PM - 2:30 PM

△ [11p-N305-4] Analysis of Electronic States at SiC MOS Inteface Based on Empirical Pseudopotential Method

〇Sachika Nagamizo¹, Tanaka Hajime¹, Mori Nobuya¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

[11p-N305-5] First-principles study on electronic structure of SiC/SiO₂ step interface

〇(M1)Kazuma Yokota¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1.Kobe Univ)

3:00 PM - 3:15 PM

▲ [11p-N305-6] Evaluation of long-term reliability of 4H-SiC(0001) CMOS ring oscillators at high temperature

〇(PC)Kidist Moges Ayele¹, Takuma Kobayashi¹, Takuji Hosoi¹, Takayoshi Shimura¹, Keita Tachiki², Tsunenobu Kimoto², Heiji Watanabe¹ (1.Graduate School of Eng., Osaka Univ., 2.Graduate School of Eng., Kyoto Univ.)

3:15 PM - 3:30 PM

[11p-N305-7] Operating Characteristics of Full 4H-SiC Pixel Device under UV-Light Irradiation

〇Shin-Ichiro Kuroki¹, Kenta Nishigaito¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³ (1.RNBS, Hiroshima Univ., 2.QST, 3.AIST)

3:30 PM - 3:45 PM

[11p-N305-8] Output characteristics of SOI-Si/4H-SiC hybrid pixel devices for radiation hardened CMOS image sensors

〇Tatsuya Meguro¹, Masayuki Tsutsumi¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ., 2.QST, 3.AIST)

3:45 PM - 4:00 PM

▲ [11p-N305-9] High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications

〇Cuong Van Vuong¹, Tetsuya Meguro¹, Tadashi Sato¹, Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Uni.)

4:00 PM - 4:15 PM

△ [11p-N305-10] Modeling of SiC JFET for High Temperature IC Design by Complementary JFETs

〇Noriyuki Maeda¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Oral presentation

[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

Sun. Sep 12, 2021 9:00 AM - 11:45 AM N305 (Oral)

Takahiro Makino(QST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-N305-1] SiC Surface Characterization by KrF Excimer Laser Doping
Study of Laser Doping Mechanism (part 1)

〇Kaname Imokawa¹, Ryoichi Nohdomi¹, Yasutsugu Usami¹ (1.Gigaphoton Inc.)

9:15 AM - 9:30 AM

[12a-N305-2] SiC Surface Characterization by KrF Excimer Laser Doping
Study of Laser Doping Mechanism (part 2)

〇Kaname Imokawa¹, Ryoichi Nohdomi¹, Yasutsugu Usami¹ (1.Gigaphoton Inc.)

9:30 AM - 9:45 AM

▲ [12a-N305-3] Automatic Temperature Measurement of SiC Wafer During Millisecond Thermal Processing Based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Keiya Fujimoto¹, Kotaro Matsuguchi¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

9:45 AM - 10:00 AM

[12a-N305-4] Transient internal temperature measurement of SiC-Schottky Barrier Diode using Optical-Interference Contactless Thermometry (OICT)

〇Keiya Fujimoto¹, Hiroaki Hanafusa¹, Takuma Sato¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

10:00 AM - 10:15 AM

[12a-N305-5] Conduction mechanism at metal/heavily-doped SiC Schottky interfaces

〇Masahiro Hara¹, Hajime Tanaka^1,2, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Osaka Univ.)

10:15 AM - 10:30 AM

△ [12a-N305-6] Reduction of Schottky barrier height of low work function metal/n-type 4H-SiC interface by post metallization annealing

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Mitsuaki Shimizu², Osamu Nakatsuka^1,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.AIST-NU GaN-OIL, 3.IMaSS, Nagoya Univ.)

10:45 AM - 11:00 AM

△ [12a-N305-7] Selective introduction of color centers into 4H-SiC via ion implantation and annealing

〇Takuma Kobayashi^1,2, Maximilian Ruehl¹, Johannes Lehmeyer¹, Leonard Zimmermann¹, Michael Krieger¹, Heiko Weber¹ (1.FAU, 2.Osaka Univ.)

11:00 AM - 11:15 AM

[12a-N305-8] Optically detected magnetic resonance spectra of silicon vacancies in 4H-SiC with different temperatures

〇(M1)Shu Motoki^1,2, Shinichiro Sato², Yuta Masuyama², Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST)

11:15 AM - 11:30 AM

[12a-N305-9] Measurement of current-induced magnetic fields in SiC devices by silicon vacancy quantum sensor

〇Yuichi Yamazaki¹, Yuta Masuyama¹, Shin-ichiro Sato¹, Takahiro Makino¹, Naoto Yamada¹, Takahiro Satoh¹, Kazutoshi Kojima², Hidekazu Tsuchida³, Norihiro Hoshino³, Takeshi Ohshima¹ (1.QST, 2.AIST, 3.CRIEPI)

11:30 AM - 11:45 AM

[12a-N305-10] Uniformity characterization of SiC, GaN, and a-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Yuto Kawasumi¹, Fumimasa Horikiri², Noboru Fukuhara², Tomoyoshi Mishima³, Takashi Shinohe⁴ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ., 4.FLOSFIA)

Oral presentation

[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

Sun. Sep 12, 2021 1:30 PM - 5:15 PM N305 (Oral)

Kenji Shiojima(Univ. of Fukui), Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[12p-N305-1] Non-radiative Recombination Lifetime and Effective Dislocation Radius in an n-GaN Layer on M-3D Substrates

〇Kazuhiro Mochizuki¹, Hiroshi Ohta¹, Fumimasa Horikiri², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

1:45 PM - 2:00 PM

[12p-N305-2] Analysis of the origin of 2step C-V characteristics in polarization junction substrates

〇Kazushi Onimura¹, Takuya Hoshii¹, Taihei Matsuhashi¹, Hiroaki Okita¹, Kuniyuki kakushima¹, Hitoshi wakabayashi¹, Kazuo Tsutsui¹, Akira Nakajima² (1.Toukou Univ., 2.Sansou Inst.)

2:00 PM - 2:15 PM

[12p-N305-3] Low on-resistance p-n junction diode using highly Ge-doped GaN substrate II
~ reduced forward-current-density dependence on anode-electrode diameter ~

〇Hiroshi Ohta¹, Naomi Asai¹, Kazuhiro Mochizuki¹, Horikiri Fumimasa², Narita Yoshinobu², Mishima Tomoyoshi¹ (1.Hosei Univ., 2.SCIOCS)

2:15 PM - 2:30 PM

[12p-N305-4] Breakdown characteristics of p-GaN/AlGaN/GaN diode with controlled charge concentration by changing Mg-doped GaN thickness

〇(M2)Soichiro Kawata¹, Yuwei Zhang¹, Iwata Naotaka¹ (1.Toyota Tech. Inst.)

2:30 PM - 2:45 PM

[12p-N305-5] Electrical Properties of SiO₂/GaN MOS Capacitors Fabricated on Mg-Implanted GaN Activated by Ultra-High-Pressure Annealing

Yuhei Wada¹, 〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Hideki Sakurai², Tetsu Kachi³, Akitaka Yoshigoe⁴, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.ULVAC ATI, 3.Nagoya Univ. IMaSS, 4.JAEA)

2:45 PM - 3:00 PM

[12p-N305-6] Electrical Properties of P-Channel GaN MOSFETs Fabricated by Mg-implantation and Ultra-High-Pressure Annealing

Yuhei Wada¹, 〇Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuma Kobayashi¹, Takuji Hosoi¹, Hideki Sakurai², Tetsu Kachi³, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.ULVAC ATI, 3.Nagoya Univ. IMaSS)

3:00 PM - 3:15 PM

[12p-N305-7] Comparative study of MIS structure on N-polar and Ga-polar GaN

〇Takahiro Gotow¹, Tatsushi Suka¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)

3:15 PM - 3:30 PM

[12p-N305-8] Correlation between film stress and EL color in GaN HEMTs on SiC substrate

〇Shiyo Urano¹, Qiang Ma¹, Yuji Ando², Atsushi Tanaka², Akio Wakejima¹ (1.Nagoya Inst., 2.Nagoya Univ.)

3:45 PM - 4:00 PM

[12p-N305-9] Diamond Field-Effect Transistors with Modulation Doping

〇Makoto Kasu¹, Niloy Chandra Saha¹, Seong-Woo Kim², Toshiyuki Oishi¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

4:00 PM - 4:15 PM

[12p-N305-10] Improvement of Breakdown Voltage of NiO/β-Ga₂O₃ Diode by Heat Treatment in Oxygen

〇Shinji Nakagomi¹, Masaya Sato¹, Ryoto Chiba¹, Koji Yano² (1.Ishinomaki Senshu Univ., 2.Yamanashi Univ.)

4:15 PM - 4:30 PM

[12p-N305-11] Reverse Recovery Characteristics of NiO/β-Ga₂O₃ Hetero pn Junction Diode

〇Shinji Nakagomi¹, Koji Yano² (1.Ishinomaki Senshu Univ., 2.Yamanashi Univ.)

4:30 PM - 4:45 PM

[12p-N305-12] Fabrication of Lateral Ga₂O₃ MOSFETs on Nitrogen-Implanted Substrates

〇Takumi Ohtsuki¹, Masataka Higashiwaki¹ (1.NICT)

4:45 PM - 5:00 PM

[12p-N305-13] RF Power Performance of Submicron Ga₂O₃ MOSFETs

〇Takafumi Kamimura¹, Roberto Quaglia², Martin Kuball³, Paul Tasker², Masataka Higashiwaki¹ (1.NICT, 2.Cardiff Univ., 3.Univ. of Bristol)

5:00 PM - 5:15 PM

[12p-N305-14] 5.0 kV normally-off β-Ga₂O₃ vertical transistor with HfO₂ gate-insulator

〇Daiki Wakimoto¹, Chia-Hung Lin¹, Quang Tu Thieu¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Tech.)

Oral presentation

[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

Mon. Sep 13, 2021 9:00 AM - 11:45 AM N305 (Oral)

Taketomo Sato(Hokkaido Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[13a-N305-1] Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures

〇(M1)Yuta Komori¹, Yasuki Kimura¹, Takuya Hoshii¹, Kiyotaka Miyano², Masayuki Tsukui², Ichirou Mizushima², Takashi Ida², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.NuFlare Technology)

9:15 AM - 9:30 AM

[13a-N305-2] Fabrication and characterization of GaN-HEMT grown on AlN/SiC templates

〇Masatomo Sumiya¹, Osamu Goto², Liwen Sang¹, Yuki Takahara^1,3, Akira Uedono³, Yasutaka Imanak¹, Taichiro Konno², Fumimasa Horikiri², Kenji Kimura², Hajime Fujikura² (1.NIMS, 2.SCIOCS, 3.Univ. of Tsukuba)

9:30 AM - 9:45 AM

▲ [13a-N305-3] Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

〇YUWEI ZHANG¹, Soichiro Kawata¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

9:45 AM - 10:00 AM

▼ [13a-N305-4] Interface-charge-engineered normally-off AlTiO/AlGaN/GaN field-effect transistors

〇(D)Duong Dai Nguyen¹, Takehiro Isoda¹, Yuchen Deng¹, Toshi-kazu Suzuki¹ (1.Jap. Adv. Inst. of Sci. and Tech.)

10:00 AM - 10:15 AM

△ [13a-N305-5] Fabrication and characterization of AlGaInN/Al_0.36Ga_0.64N HFETs with selective-area regrowth ohmic contacts and AlN barriers.

〇Akiyoshi Inoue¹, Sakura Tanaka¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

10:15 AM - 10:30 AM

△ [13a-N305-6] Performance Improvements of P-channel GaN HFETs by ALE using Nitrogen Plasma

〇(M1)Shonosuke Kimura¹, Katsuyuki Miura¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Inst.)

10:45 AM - 11:00 AM

[13a-N305-7] Comparison of channel conduction modes on lateral GaN FinFETs

〇Mitsutaka Sasaki¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

11:00 AM - 11:15 AM

[13a-N305-8] Fabrication of GaN FinFETs using selective area growth: Study on process to form growth windows

〇Takashi Ota¹, Mitsutaka Sasaki¹, Ken Takayama¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

11:15 AM - 11:30 AM

[13a-N305-9] Study on Widening of Drift Region of GaN FinFETs
for Low On-Resistance and High Breakdown Voltage

〇Yusuke Hisatsune¹, Hoshii Takuya¹, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Tsutsui Kazuo¹ (1.Tokyo Tech)

11:30 AM - 11:45 AM

[13a-N305-10] Transient temperature evaluation of GaN bonded on CC

〇Hiroto Saito¹, Aozora Fukui¹, Tomohiro Obata¹, Atsushi Tanaka², Tadatomo Suga³, Kai Takeuchi³ (1.Meikou Univ., 2.Nagoya Univ., 3.Meisei Univ.)

Poster presentation

[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

Thu. Sep 23, 2021 11:00 AM - 12:40 PM P10 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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11:00 AM - 12:40 PM

[23a-P10-1] Roughness Reduction Processing of 4H-SiC 3D structure formed by Dry Etching Process

〇Tadashi Sato¹, Riku Takeuchi¹, Takuma Shima¹, Vuong Van Cuong¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ.)

11:00 AM - 12:40 PM

[23a-P10-2] High-Selective Deep RIE of 4H-SiC with SiO₂ Hard Mask in Cl₂/HBr/O₂ Plasma Chemistry

〇(M1)Riku Takeuchi¹, Tadashi Sato¹, Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Univ.)

11:00 AM - 12:40 PM

[23a-P10-3] Thermal Oxidation of SiC Surface at Lower Temperatures:
O₂ Pressure Dependences of Oxidation Rates of Si and C Surfaces

〇Yuta Murono¹, Masayoshi Sato¹, Haruto Koriyama¹, Yoshiharu Enta¹ (1.Hirosaki Univ.)

11:00 AM - 12:40 PM

[23a-P10-4] Nanoscale inhomogeneity of Ba-introduced oxide film on SiC

〇Shogo Sekine¹, Mitsuo Okamoto², Mitsuru Sometani², Hirohisa Hirai², Ryu Hasunuma¹ (1.Tsukuba Univ., 2.AIST)

11:00 AM - 12:40 PM

[23a-P10-5] Study of Si-SOI/SiO₂/4H-SiC direct wafer bonding

〇(M2)Kazuya Kawamura¹, Tatsuya Meguro¹, Masayuki Tsutsumi¹, Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Univ., 2.QST, 3.AIST)

11:00 AM - 12:40 PM

▲ [23a-P10-6] High-Temperature Reliability at 400℃ of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate

〇Cuong Van Vuong¹, Tetsuya Meguro¹, Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Uni.)

11:00 AM - 12:40 PM

[23a-P10-7] Characterization of gamma-irradiated 4H-SiC JFETs by illumination of sub-bandgap light

〇Akinori Takeyama¹, Takahiro Makino¹, Takeshi Ohshima¹, Shin-Ichiro Kuroki², Yasunori Tanaka³ (1.QST, 2.Hiroshima Univ., 3.AIST)

11:00 AM - 12:40 PM

[23a-P10-8] Effect of Operating Temperature on Thermionic Emission of Si-doped AlGaN/6H-SiC

〇Takuya Fujimoto¹, Shigeya Kimura², Hisashi Yoshida², Hisao Miyazaki², Akihisa Ogino¹ (1.Shizuoka Univ., 2.Corporate Research & Development Center, Toshiba Corp.)

11:00 AM - 12:40 PM

[23a-P10-9] Characterization of plasma-induced defects in GaN by the reverse bias annealing

〇(M2)Katsutoshi Mae¹, Akari Yamaya¹, Seiji Nakamura¹ (1.Tokyo Metropolitan Univ.)

11:00 AM - 12:40 PM

[23a-P10-10] Formation of Ti/Al/Ti ohmic electrodes with smooth surface on AlGaN/GaN HEMT

〇Taisei Nakano¹, Yuzuru Narita¹ (1.Yamagata Univ.)

11:00 AM - 12:40 PM

[23a-P10-11] Calculation of interface trap level at GaN/SiO₂ interface

〇Hidenori Tsuji¹, Yuki Ohuchi¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Masaharu Edo¹ (1.Fuji Electric)

11:00 AM - 12:40 PM

[23a-P10-12] Effect of ALD-Al₂O₃ film quality on electrical properties of Al₂O₃/AlGaN/GaN MIS structures

〇Takuya Shibata¹, Mutsunori Uenuma¹, Takahiro Yamada², Kunihiko Nishimura², Koji Yoshitsugu², Yukiharu Uraoka¹ (1.NAIST, 2.Mitsubishi Electric Corp.)

11:00 AM - 12:40 PM

[23a-P10-13] Electrical properties of normally-off type AlGaN/GaN MIS-HEMTs with SiO₂/Al₂O₃ double insulators fabricated by ALD

〇Keitaro Toda¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.NITech)

11:00 AM - 12:40 PM

[23a-P10-14] Circuit modeling of parasitic elements by measuring radiated emission in GaN-WPT circuit

〇Toshihide Ide^1,2, Mitsuaki Shimizu¹, Noriyuki Takada² (1.NU-AIST GaN-OIL, 2.AIST RIAEP)

Sessions

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[11a-N305-1~11] 13.7 Compound and power devices, process technology and characterization

△ [11a-N305-4] Spatially resolved CL of p-type ion-implanted GaN using vacancy-guided Mg diffusion

△ [11a-N305-7] Nitrogen-displacement-related hole traps in homoepitaxial p-type GaN

[11p-N305-1~10] 13.7 Compound and power devices, process technology and characterization

△ [11p-N305-2] Investigation of nitrogen profiles and interface properties of SiO2/non-basal-plane 4H-SiC interfaces annealed in NO

△ [11p-N305-4] Analysis of Electronic States at SiC MOS Inteface Based on Empirical Pseudopotential Method

▲ [11p-N305-6] Evaluation of long-term reliability of 4H-SiC(0001) CMOS ring oscillators at high temperature

▲ [11p-N305-9] High-Temperature Operation of Differential Amplifier Based on 4H-SiC MOSFETs for Harsh Environment Applications

△ [11p-N305-10] Modeling of SiC JFET for High Temperature IC Design by Complementary JFETs

[12a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

▲ [12a-N305-3] Automatic Temperature Measurement of SiC Wafer During Millisecond Thermal Processing Based on Optical-Interference Contactless Thermometry (OICT)

△ [12a-N305-6] Reduction of Schottky barrier height of low work function metal/n-type 4H-SiC interface by post metallization annealing

△ [12a-N305-7] Selective introduction of color centers into 4H-SiC via ion implantation and annealing

[12p-N305-1~14] 13.7 Compound and power devices, process technology and characterization

[13a-N305-1~10] 13.7 Compound and power devices, process technology and characterization

▲ [13a-N305-3] Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

▼ [13a-N305-4] Interface-charge-engineered normally-off AlTiO/AlGaN/GaN field-effect transistors

△ [13a-N305-5] Fabrication and characterization of AlGaInN/Al0.36Ga0.64N HFETs with selective-area regrowth ohmic contacts and AlN barriers.

△ [13a-N305-6] Performance Improvements of P-channel GaN HFETs by ALE using Nitrogen Plasma

[23a-P10-1~14] 13.7 Compound and power devices, process technology and characterization

▲ [23a-P10-6] High-Temperature Reliability at 400℃ of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate

Authenticate

△ [11p-N305-2] Investigation of nitrogen profiles and interface properties of SiO₂/non-basal-plane 4H-SiC interfaces annealed in NO

△ [13a-N305-5] Fabrication and characterization of AlGaInN/Al_0.36Ga_0.64N HFETs with selective-area regrowth ohmic contacts and AlN barriers.