Oral presentation

[10a-N303-1~11] 13.8 Optical properties and light-emitting devices

Fri. Sep 10, 2021 9:00 AM - 11:45 AM N303 (Oral)

Yasushi Nanai(National Defense Academy), Takayuki Nakanishi(NIMS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-N303-1] Study on pyrosilicate-type scintillator

〇Shunsuke Kurosawa^1,2, Akihiro Yamaji^1,2, Rikito Murakami^3,2, Yasuhiro Shoji^1,3, Akira Yoshikawa^3,2,1 (1.Tohoku Univ. NICHe, 2.Tohoku Univ. IMR, 3.C&A)

9:15 AM - 9:30 AM

[10a-N303-2] Photoinduced valence change and occupation site of rare-earth ions in long persistent phosphorescence phosphor revealed by XAFS experiment

〇Mamoru Kitaura¹, Shinta Watanabe², Takayuki Nakanishi³, Manabu Ishizaki¹, Toshiaki Ina⁴, Kotaro Higashi⁴, Naomi Kawamura⁴, Hiroyuki Setoyama⁵, Yuta Matsushima¹, Takashi Kunimoto⁶, Akimasa Ohnishi¹ (1.Yamagata Univ., 2.Tokyo Inst. Tech., 3.NIMS, 4.JASRI, 5.SAGA-LS, 6.Tokushima-Bunri Univ.)

9:30 AM - 9:45 AM

▲ [10a-N303-3] Insights into the saturation mechanism of LED phosphors

〇Jian Xu¹, Kohsei Takahashi¹, Takayuki Nakanishi¹, Takashi Takeda¹, Naoto Hirosaki¹ (1.NIMS)

9:45 AM - 10:00 AM

[10a-N303-4] Elucidation of luminescent center position in β-sialon phosphor

〇Takashi Takeda¹, Shiro Funahashi¹, Kosei Takahashi¹, Naoto Hirosaki¹ (1.NIMS)

10:00 AM - 10:15 AM

[10a-N303-5] Crystal Structure and Emission Property of A_mX_m+₁-type New Blue Oxynitride Phosphor

〇Shiro Funahashi¹, Yuichi Michiue¹, Takashi Takeda¹, Naoto Hirosaki¹ (1.NIMS)

10:15 AM - 10:30 AM

[10a-N303-6] Quantitative evaluation of Stokes shift in Eu²⁺-doped phosphors based on density functional theory

〇Kousei Hiura¹, Takashi Takeda², Yukinori Koyama², Hidekazu Ikeno¹ (1.Osaka prefecture Univ., 2.NIMS)

10:30 AM - 10:45 AM

[10a-N303-7] Impact of Rare Earth ion on Nucleation of Glass and Precipitation of Upconversion Nanocrystals in Melt-Quenching Process

〇Kenji Shinozaki^1,2 (1.AIST, 2.JST Presto)

10:45 AM - 11:00 AM

[10a-N303-8] Ultraviolet emission characteristics of RE₂BaZnO₅ (RE = Y, La): Pr³⁺ under visible-light excitation

〇Shodai Okamoto¹, Satoshi Iwasaki¹, Kanaha Tamura¹, Hiroaki Samata¹ (1.Kobe Univ.)

11:00 AM - 11:15 AM

[10a-N303-9] Application of bidirectional wavelength conversion films using SrLaZnO_3.5 as host material to a-Si solar cells

〇Riku Shudo¹, Hiroaki Samata¹ (1.Kobe Univ.)

11:15 AM - 11:30 AM

[10a-N303-10] Luminescence characteristics of Ti⁴⁺ in O-F octahedron in Al phosphate compounds

〇(M2)Hiro Hosoi¹, Samata Hiroaki¹ (1.Kobe Univ.)

11:30 AM - 11:45 AM

[10a-N303-11] Preparation of green emissive thin films using natural lycopene isolated and purified from dried tomatoes

〇Shuichiro Matsukura¹, Ohtani Naoki¹ (1.Doshisha Univ.)

Oral presentation

[10p-N303-1~19] 13.8 Optical properties and light-emitting devices

Fri. Sep 10, 2021 1:30 PM - 6:30 PM N303 (Oral)

Ariyuki Kato(Nagaoka Univ. of Tech.), Jun Tatebayashi(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[10p-N303-1] Photoexcited carrier dynamics of PbS/CdS quantum dots film

〇(M2)Naoki Oguri¹, Chao Ding¹, Syuji Hayase¹, Sgabe Tomah¹, Taro Toyoda¹, Qing Shen¹ (1.Univ. Electro-commun.)

1:45 PM - 2:00 PM

[10p-N303-2] Synthesis and optical properties of Zn(Te_1-xSe_x)/ZnSe quantum dots

〇Satoshi Tsukuda¹, Masao Kita², Takahisa Omata¹ (1.Tohoku Univ. IMRAM, 2.NIT, Toyama College)

2:00 PM - 2:15 PM

[10p-N303-3] Application of CuGaS₂/ZnS Quantum Dots - EVA Films to Monocrystalline Silicon Solar Module

〇Shunnnosuke Hase¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:15 PM - 2:30 PM

[10p-N303-4] Fabrication and Characterization of Fluororesin Films Containing p-Phenylenediamine-Derived Carbon Dots

〇(M1)Koyo Washio¹, Kohei Sato¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

2:30 PM - 2:45 PM

[10p-N303-5] Comparing the Fluorescence Properties of Phloroglucinol- and 4,6-Diaminoresorcinol Dihydrochloride-Derived Carbon Dots

〇Rika Katakami¹, Kohei Sato¹, Yoshiki Iso¹, Tetsuhiko Isobe¹, Akihiro Ogura¹, Ken-ichi Takao¹ (1.Keio Univ.)

2:45 PM - 3:00 PM

[10p-N303-6] Appearance of Self-Recovery Function of CsPbBr₃ Perovskite Nanocrystals by Gas Barrier Polymer

〇Ikumi Enomoto¹, Yoshiki Iso¹, Tetsuhiko Isobe¹ (1.Keio Univ.)

3:00 PM - 3:15 PM

[10p-N303-7] First-principles study on stability and optical properties of 0-dimensional Cs₄PbX₆ semiconductors

〇Ami Tomita¹, Takashi Nakayama¹ (1.Chiba Univ.)

3:15 PM - 3:30 PM

△ [10p-N303-8] Epitaxially Grown High Quality Yb:Y-Al-O Thick Film for Optical Refrigeration

〇Yuta Nakayama¹, Atsushi Satsui¹, Yuji Matsuo¹, Yukihiro Harada¹, Takashi Kita¹ (1.Kobe Univ.)

3:30 PM - 3:45 PM

△ [10p-N303-9] Fabrication and optical characteristics of GaN:Eu-based microdisk with higher Q factor

〇Teruki Taniguchi¹, Jun Tatebayashi^1,2, Dolf Timmerman¹, Shuhei Ichikawa^1,3, Masaaki Ashida⁴, Yasufumi Fujiwara¹ (1.Grad.Sch.Eng.Osaka Univ., 2.QIQB Osaka Univ., 3.UHVEM Osaka Univ., 4.Grad.Sch.Eng.Sci.Osaka Univ.)

3:45 PM - 4:00 PM

△ [10p-N303-10] [Highlight]OMVPE growth and luminescence property of Tb-doped Al_xGa_1-xN

〇Ryota Komai¹, Shuhei Ichikawa^1,2, Hiromasa Hanzawa³, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Graduate School of Engineering, Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Graduate School of Engineering Science, Osaka Univ.)

4:15 PM - 4:30 PM

△ [10p-N303-11] Epitaxially laterally overgrown AlGaN quantum wells studied by time-integrated and -resolved photoluminescence under selective/non-selective excitation conditions

〇(M1)Shiki Tanaka¹, Ryota Ishii¹, Norman Susilo², Tim Wernicke², Michael Kneissl², Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ., 2.TU. Berlin)

4:30 PM - 4:45 PM

△ [10p-N303-12] Temperature dependence of circular polarization properties of electroluminescence in quantum dot spin-polarized light-emitting diode

〇Kohei Eto¹, Satoshi Hiura¹, Soyoung Park¹, Junichi Takayama¹, Agus Subagyo¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

4:45 PM - 5:00 PM

[10p-N303-13] Temperature And Excitation Intensity Dependence Of Infrared Photoluminescence Peaks In InAs/GaSb Superlattice Grown By MOVPE Method

〇Yuto Iwakiri¹, Tomohiro Ohama¹, Masakazu Arai¹, Takeshi Fujisawa², Koji Maeda¹ (1.Miyazaki Univ., 2.Hokkaido Univ.)

5:00 PM - 5:15 PM

▼ [10p-N303-14] Long wavelength PL of InAs surface quantum dots enhanced by underlying reservoir

〇(DC)Hanif Mohammadi¹, Ronel Roca¹, Itaru Kamiya¹ (1.Toyota tech. inst.)

5:15 PM - 5:30 PM

△ [10p-N303-15] Investigation of the Quenching Mechanism of CsPbBr₃ Nanocrystal/Diarylethene Hybrids Using Femtosecond Pump-Probe Spectroscopy

〇Yuji Akaishi¹, Ashkan Mokhtar¹, Taiki Nohara¹, Daisuke Kosumi¹, Tuyoshi Fukaminato¹, Tetsuya Kida¹ (1.Kumamoto Univ.)

5:30 PM - 5:45 PM

△ [10p-N303-16] Evaluation of anti-Stokes luminescence from CsPbBr₃/Cs₄PbBr₆ bulk crystal for realization of optical refrigeration

〇Yuto Kajino¹, Shuji Otake¹, Takumi Yamada², Kenichi Oto¹, Yoshihiko Kanemitsu², Yasuhiro Yamada¹ (1.Chiba univ., 2.Kyoto univ.)

5:45 PM - 6:00 PM

[10p-N303-17] Growth of SnO₂ nanowires by a vapor transport method and evaluation

〇Yuta Shiomi¹, Shunji Ozaki¹ (1.Gunma Univ.)

6:00 PM - 6:15 PM

[10p-N303-18] Relationship between carrier concentration and IR absorption in Mg₂Si crystals

〇Hiroto Tsuchida¹, Naoki Mizunuma¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

6:15 PM - 6:30 PM

▲ [10p-N303-19] Photoconduction, Luminescence and Optical Absorption of Porous Nano-Silicon during Chemical Oxidation in aqueous solutions

〇Bernard Gelloz¹, Souki Sakata², Lianhua Jin² (1.Nagoya Univ., 2.Yamanashi Univ.)

Poster presentation

[23a-P11-1~18] 13.8 Optical properties and light-emitting devices

Thu. Sep 23, 2021 11:00 AM - 12:40 PM P11 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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11:00 AM - 12:40 PM

[23a-P11-1] [Highlight]Effects of Annealing Condition on Chromium-doped CaO-GeO₂ Glass Phosphors

〇Yasushi Nanai¹, Seiya Kondo¹, Nobuaki Kitazawa¹ (1.National Defense Academy)

11:00 AM - 12:40 PM

[23a-P11-2] Effect of high-pressure liquid phase synthesis of deep red emitting Mg₂TiO₄:Mn

〇(M2)Msayuki Endo¹, Naoki Uesugi¹, Hiroko Kominami¹, Kazuhiko Hara¹ (1.Shizuoka Univ.)

11:00 AM - 12:40 PM

[23a-P11-3] Optimization of preparation condition of ZnAl₂O₄ thin film for UV emitting phosphor

〇Naoki Sonoda¹, Kosuke Inoue¹, Hiroko Kominami¹, Kazuhiko Hara¹ (1.Shizuoka Univ.)

11:00 AM - 12:40 PM

[23a-P11-4] Scintillation Properties for Cs₂Hf(I, Br)₆ with Red Emission

〇(M1)Chiahya Fujiwara¹, Shohei Kodama², Shiori Ishikawa^3,4, Shunsuke Kurosawa^1,3, Akihiro Yamaji^1,3, Yuji Ohashi³, Yuui Yokota¹, Kei Kamata^3,4, Hiroki Sato³, Satoshi Toyoda³, Masao Yoshino¹, Takashi Hanada¹, Akira Yoshikawa^1,3,4 (1.IMR, Tohoku Univ., 2.Graduate School of Sci. and Eng., Saitama Univ., 3.NICHe, Tohoku Univ., 4.C&A Corporation)

11:00 AM - 12:40 PM

[23a-P11-5] Electric and electroluminescence properties of Ca_0.6Sr_0.4Ti_0.9Al_0.1O_3-_d :Pr thin films with In₂O₃:Sn cathode and anode

〇Toru Kyomen¹, Eri Yokozuka¹, Hiroshi Takashima² (1.Gunma Univ., 2.AIST)

11:00 AM - 12:40 PM

[23a-P11-6] Optical properties of Mn doped ZnS thin films under gas-phase conditions and application to inorganic EL

〇(M1)Taisei Kitawaki¹, Wani Koichi¹, Takahito Imai¹, Takahiko Ban², Shin-ichi Yamamoto¹ (1.Ryukoku Univ., 2.Univ. Shiga Pref.)

11:00 AM - 12:40 PM

[23a-P11-7] Characterization of a Distributed-Type Inorganic EL Device for Two-Sided Emission

〇(B)Shuhei Tokura¹, Daiki Satou¹, Taisei Kitawaki¹, Koichi Wani¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

11:00 AM - 12:40 PM

[23a-P11-8] Characterization of an Inorganic EL Device using Ferrite Core Coils

〇Daiki Sato¹, Taisei Kitawaki¹, Koichi Wani¹, Shin-ichi Yamamoto¹ (1.Ryukoku Univ.)

11:00 AM - 12:40 PM

[23a-P11-9] An investigation of the Electrical Conduction of OLEDs with and without 4CzIPN

〇Ryo Sato¹, Ichino Yusuke¹, Yoshiyuki Seike¹, Tatsuo Mori¹ (1.Aichi Inst. Tech.)

11:00 AM - 12:40 PM

[23a-P11-10] Solution-processed VCSELs using CdSe/ZnS core-shell colloidal quantum dots

〇(M2)Nobuki Niboshi¹, Naoki Ohtani¹ (1.Doshisha Univ.)

11:00 AM - 12:40 PM

[23a-P11-11] Thin film fabrication of Cs₃Cu₂I₅ using mist deposition method

〇Yuya Nishioka¹ (1.Kyoto Inst. of Tech)

11:00 AM - 12:40 PM

[23a-P11-12] NIR multi-wavelengths surface emitting laser using InAs quantum dots

〇Jin Oshima¹, Nobuhiko Ozaki¹, Hisaya Oda², Eiichiro Watanabe³, Hirotaka Ohsato³, Naoki Ikeda³, Yoshimasa Sugimoto³, R. Hogg⁴ (1.Wakayama Univ., 2.CIST, 3.NIMS, 4.Univ. Glasgow)

11:00 AM - 12:40 PM

[23a-P11-13] Crystal growth and optical evaluation of AgGa_xIn_1-xS₂ semiconductor

〇Motoaki Sano¹, Syunji Ozaki¹ (1.Gunma Univ.)

11:00 AM - 12:40 PM

[23a-P11-14] Crystal growth of Cu_xAg_1-xInSe₂ semiconductors and evaluation of their bandgap energies

〇Yuto Ushikoshi¹, Syunji Ozaki¹ (1.Gunma univ.)

11:00 AM - 12:40 PM

[23a-P11-15] Deposition and optical properties of Cs₃Cu₂(I_1-xBr_x)₅ (0≤x≤1) thin films by mist deposition

〇Keisuke Watanabe¹, Yuya Nishioka¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

11:00 AM - 12:40 PM

[23a-P11-16] Design and fabrication of distributed feedback waveguide using Si/CaF₂ heterostructures

〇Kenta Kitamura¹, Gensai Tei¹, Long Liu¹, Yohei Koyanagi¹, Daiki Sugawara¹, Masahiro Watanabe¹ (1.Tokyo Tech)

11:00 AM - 12:40 PM

[23a-P11-17] Photoluminescence measurements from low to high temperature for wide-band gap semiconductor

〇Shunnosuke Okino¹, Tomoyuki Uchida¹, Ryuichi Sugie¹ (1.Toray Research Center)

11:00 AM - 12:40 PM

[23a-P11-18] Evaluation of valence band difference (ΔE_v) at Si/CaF₂ interface using p-type single barrier tunneling diodes

〇Daiki Sugawara¹, Long Liu¹, Gensai Tei¹, Yohei Koyanagi¹, Kenta Kitamura¹, Masahiro Watanabe¹ (1.Tokyo Tech)

Sessions

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[10a-N303-1~11] 13.8 Optical properties and light-emitting devices

▲ [10a-N303-3] Insights into the saturation mechanism of LED phosphors

[10p-N303-1~19] 13.8 Optical properties and light-emitting devices

△ [10p-N303-8] Epitaxially Grown High Quality Yb:Y-Al-O Thick Film for Optical Refrigeration

△ [10p-N303-9] Fabrication and optical characteristics of GaN:Eu-based microdisk with higher Q factor

△ [10p-N303-10] [Highlight]OMVPE growth and luminescence property of Tb-doped AlxGa1-xN

△ [10p-N303-11] Epitaxially laterally overgrown AlGaN quantum wells studied by time-integrated and -resolved photoluminescence under selective/non-selective excitation conditions

△ [10p-N303-12] Temperature dependence of circular polarization properties of electroluminescence in quantum dot spin-polarized light-emitting diode

▼ [10p-N303-14] Long wavelength PL of InAs surface quantum dots enhanced by underlying reservoir

△ [10p-N303-15] Investigation of the Quenching Mechanism of CsPbBr3 Nanocrystal/Diarylethene Hybrids Using Femtosecond Pump-Probe Spectroscopy

△ [10p-N303-16] Evaluation of anti-Stokes luminescence from CsPbBr3/Cs4PbBr6 bulk crystal for realization of optical refrigeration

▲ [10p-N303-19] Photoconduction, Luminescence and Optical Absorption of Porous Nano-Silicon during Chemical Oxidation in aqueous solutions

[23a-P11-1~18] 13.8 Optical properties and light-emitting devices

Authenticate

△ [10p-N303-10] [Highlight]OMVPE growth and luminescence property of Tb-doped Al_xGa_1-xN

△ [10p-N303-15] Investigation of the Quenching Mechanism of CsPbBr₃ Nanocrystal/Diarylethene Hybrids Using Femtosecond Pump-Probe Spectroscopy

△ [10p-N303-16] Evaluation of anti-Stokes luminescence from CsPbBr₃/Cs₄PbBr₆ bulk crystal for realization of optical refrigeration