Taehyeon Kil

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Speaker, Author, Co-Author

Thu. Mar 18, 2021 1:30 PM - 6:00 PM Z05 (Z05)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

3:45 PM - 4:00 PM

▼ [18p-Z05-9] Positive V_FB shift of 4H-SiC MOS capacitors induced by Al₂O₃/SiO₂ interface dipole layer formation

〇(D)Taehyeon Kil¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Advanced Technology R&D Center, Mitsubishi Electric Corporation)