Takuya Hoshi

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Speaker, Author, Co-Author

Fri. Mar 19, 2021 1:00 PM - 4:45 PM Z25 (Z25)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

1:00 PM - 1:15 PM

[19p-Z25-1] Electric Properties of GaN channel HEMTs on High Resistivity GaN Substrates

〇Takuya Hoshi¹, Yuki Yoshiya¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)