〇(M1C)Koichi Ishii¹, Shun Suzuki¹, Akinori Oda¹, Yoshiaki Watanabe², Takayuki Ohta³, Hiroyuki Kousaka⁴ (1.Chiba Inst., 2.Innovation Science Co. Ltd., 3.Meijo Univ., 4.Gifu Univ.)

10:00 AM - 10:50 AM

▲ [19a-P04-6] Development of an Ion Deflector in the Diagnostics of
Nanosecond Laser Ablation Plasmas

〇(D)James Edward Hernandez¹, Motoi Wada¹ (1.Doshisha Univ.)

10:00 AM - 10:50 AM

[19a-P04-7] Morphology Control of MoS₂ by Chemical Vapor Deposition and Optimization of Sulfur Defect Density by Plasma Treatment

〇Shuya Asada¹, Akihisa Ogino¹ (1.Shizuoka Univ.)

10:00 AM - 10:50 AM

[19a-P04-8] Low temperature synthesis and physicochemical characterization of Al₂O₃thin films formed by oxygen plasma irradiation on Al(CH₃)₃condensed layer.

〇(M2)Atsuki Okawa¹, Daichi Yamada², Yohei Otani², Tetsuya Sato¹ (1.Yamanashi Univ., 2.Suwa Univ. of Sci)

10:00 AM - 10:50 AM

[19a-P04-9] Development of a wafer surface charge suppression method by low frequency voltage for atomic level profile control in plasma etching

〇Ryosuke Ochiai¹, Mori Isao¹, Tanaka Motohiro¹ (1.Hitachi High-Tech)

Session information

[19a-P04-1~9] 8 Plasma Electronics(Poster)

[19a-P04-1] Inactivation of skin cancer cells using a medium activated by irradiation of atmospheric He+O₂ mixed gas plasma

[19a-P04-2] Characteristics of Discharge in Water Using Ignition Coil

[19a-P04-3] Enhancement of local electric field in electromagnetically induced transparency like metasurface by shrinking the capacitor size and its application to microplasma generation

▲ [19a-P04-4] Simulation of Ion Trajectories in an Ion Mobility Spectrometer for Atmospheric Pressure Plasma Diagnostics

[19a-P04-5] Measurement of Gas Flow Rate Dependence of Incident Radical and Ion on the Substrate in RF Low-Pressure Tetramethylsilane Plasmas

▲ [19a-P04-6] Development of an Ion Deflector in the Diagnostics of
Nanosecond Laser Ablation Plasmas

[19a-P04-7] Morphology Control of MoS₂ by Chemical Vapor Deposition and Optimization of Sulfur Defect Density by Plasma Treatment

[19a-P04-8] Low temperature synthesis and physicochemical characterization of Al₂O₃thin films formed by oxygen plasma irradiation on Al(CH₃)₃condensed layer.

[19a-P04-9] Development of a wafer surface charge suppression method by low frequency voltage for atomic level profile control in plasma etching

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Session information

[19a-P04-1~9] 8 Plasma Electronics(Poster)

[19a-P04-1] Inactivation of skin cancer cells using a medium activated by irradiation of atmospheric He+O2 mixed gas plasma

[19a-P04-2] Characteristics of Discharge in Water Using Ignition Coil

[19a-P04-3] Enhancement of local electric field in electromagnetically induced transparency like metasurface by shrinking the capacitor size and its application to microplasma generation

▲ [19a-P04-4] Simulation of Ion Trajectories in an Ion Mobility Spectrometer for Atmospheric Pressure Plasma Diagnostics

[19a-P04-5] Measurement of Gas Flow Rate Dependence of Incident Radical and Ion on the Substrate in RF Low-Pressure Tetramethylsilane Plasmas

▲ [19a-P04-6] Development of an Ion Deflector in the Diagnostics ofNanosecond Laser Ablation Plasmas

[19a-P04-7] Morphology Control of MoS2 by Chemical Vapor Deposition and Optimization of Sulfur Defect Density by Plasma Treatment

[19a-P04-8] Low temperature synthesis and physicochemical characterization of Al2O3 thin films formed by oxygen plasma irradiation on Al(CH3)3 condensed layer.

[19a-P04-9] Development of a wafer surface charge suppression method by low frequency voltage for atomic level profile control in plasma etching

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[19a-P04-1] Inactivation of skin cancer cells using a medium activated by irradiation of atmospheric He+O₂ mixed gas plasma

▲ [19a-P04-6] Development of an Ion Deflector in the Diagnostics of
Nanosecond Laser Ablation Plasmas

[19a-P04-7] Morphology Control of MoS₂ by Chemical Vapor Deposition and Optimization of Sulfur Defect Density by Plasma Treatment

[19a-P04-8] Low temperature synthesis and physicochemical characterization of Al₂O₃thin films formed by oxygen plasma irradiation on Al(CH₃)₃condensed layer.