Oral presentation

[16a-Z13-1~12] 13.3 Insulator technology

Tue. Mar 16, 2021 9:00 AM - 12:15 PM Z13 (Z13)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-Z13-1] Examination of Sputtered-AlN Buffer Layer on ScAlMgO4

〇Keisuke Hozo¹, Dong-Pyo Han¹, Ryoya Mano¹, Ryo Takahashi¹, Ryoto Fujiki¹, Ryoya Hiramatu¹, Kanato Sawai¹, Satoshi Kamiyama¹, Tetuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki², Tsuguo Fukuda³, Takashi Fujii³ (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Fukuda X-tal Laboratory)

9:15 AM - 9:30 AM

[16a-Z13-2] Effects of chemical cleaning with HCl Solution on Al₂O₃/GaN interface properties

〇(M1)Taisei Nagai¹, Noriyuki Taoka¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

9:30 AM - 9:45 AM

[16a-Z13-3] Study of improvement of GeO₂ film quality and GeO₂/Ge interface state by pure water rinse after PMA

〇(M1)Hirotaka Iino¹, Haruka Horiguchi¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Noukou univ.)

9:45 AM - 10:00 AM

[16a-Z13-4] Study on improvement of GeO₂ film quality by plasma nitriding

〇(M1)Keisuke Ito¹, Hiroki Takahashi¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Noukou univ.)

10:00 AM - 10:15 AM

▲ [16a-Z13-5] [Young Scientist Presentation Award Speech] Defect control of Y₂O₃-based SiGe MOS interfaces properties

〇Tsung-En Lee¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

10:15 AM - 10:30 AM

▲ [16a-Z13-6] Characterization of slow traps in MOS interfaces of TiN/Y₂O₃/SiGe gate stacks

〇(D)TsungEn Lee, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

10:45 AM - 11:00 AM

△ [16a-Z13-7] Significant change of interface dipole effect at perovskite oxide epitaxial interface by the number of charge-introducing atomic layer

〇Atsushi Tamura¹, Seungwoo Jang², Young-Geun Park², Hanjin Lim², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Semiconductor R&D Center, Samsung Electronics)

11:00 AM - 11:15 AM

△ [16a-Z13-8] Elucidation of Interface Dipole Modulation Mechanism by Hard X-ray Photoemission Spectroscopy

〇(B)Yoshiharu Kirihara¹, Reito Wada¹, Ryota Tsujiguchi¹, Akira Yasui², Noriyuki Miyata³, Hiroshi Nohira¹ (1.Tokyo City Univ., 2.JASRI, 3.AIST)

11:15 AM - 11:30 AM

△ [16a-Z13-9] Accumulation, depletion, inversion processes in metal/insulator/p-Si device evaluated by displacement current measurement

〇Hoshito Yamamoto¹, Yuya Tanaka^1,2, Tatsuhiro Kambayashi¹, Takeaki Yajima³, Hisao Ishii^1,2,4 (1.GSSE Chiba Univ., 2.CFS Chiba Univ., 3.FISEE Kyushu Univ., 4.MCRC Chiba Univ.)

11:30 AM - 11:45 AM

[16a-Z13-10] Relation between chemical bonds and electrical properties of thick insulation film formed by chemical vapor deposition

〇Satoshi Akutsu¹, Kazuyuki Ito¹, Takuo Kikuchi¹, Nobuaki Makino¹, Yoshiyuki Kitahara¹, Tatsuya Ohguro², Yoshihiko Fuji², Mari Takahashi², Yukiko Kashiura² (1.Toshiba, 2.Toshiba Electronic Devices & Storage)

11:45 AM - 12:00 PM

[16a-Z13-11] Anodic SiO₂ film fabricated in high pressure steam - Applied voltage dependence -

〇Takumi Katata¹, Takuma Yatsuhashi¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

12:00 PM - 12:15 PM

[16a-Z13-12] Dependence of Thermal Conductivity Along Si/SiO₂ Interface on Substrate Surface Orientation

〇Yuji Yamanaka¹, Junya Takizawa¹, Motohiro Tomita¹, Takanobu Watanabe¹ (1.Waseda Univ.)

Poster presentation

[16p-P12-1~4] 13.3 Insulator technology

Tue. Mar 16, 2021 5:00 PM - 5:50 PM P12 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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5:00 PM - 5:50 PM

[16p-P12-1] Dependence of penetration barrier of alkali metal ions into SiNx and SiOx films on ion radius

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

5:00 PM - 5:50 PM

[16p-P12-2] Theoretical Study of Strain Effect on Vacancies in SiO₂

〇(M1C)Takehiro Nishimura¹, Hiroyuki Kageshima¹ (1.Shimane Univ.)

5:00 PM - 5:50 PM

[16p-P12-3] Effects of PDA on sputter-derived HfO₂/Ge structures

Yusuke Yamamoto¹, Daichi Yamada¹, 〇Yohei Otani¹, Hiroshi Okamoto² (1.Suwa Univ. of Sci., 2.Hirosaki Univ.)

5:00 PM - 5:50 PM

[16p-P12-4] Mechanism of ferroelectric phase evolution for ZrO₂ thin film by wet annealing

〇Shigehisa Shibayama¹, Jotaro Nagano¹, Koji Asaka¹, Mitsuo Sakashita¹, Osamu Nakatsuka^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Sessions

13 Semiconductors » 13.3 Insulator technology

[16a-Z13-1~12] 13.3 Insulator technology

[16a-Z13-1] Examination of Sputtered-AlN Buffer Layer on ScAlMgO4

[16a-Z13-2] Effects of chemical cleaning with HCl Solution on Al₂O₃/GaN interface properties

[16a-Z13-3] Study of improvement of GeO₂ film quality and GeO₂/Ge interface state by pure water rinse after PMA

[16a-Z13-4] Study on improvement of GeO₂ film quality by plasma nitriding

▲ [16a-Z13-5] [Young Scientist Presentation Award Speech] Defect control of Y₂O₃-based SiGe MOS interfaces properties

▲ [16a-Z13-6] Characterization of slow traps in MOS interfaces of TiN/Y₂O₃/SiGe gate stacks

△ [16a-Z13-7] Significant change of interface dipole effect at perovskite oxide epitaxial interface by the number of charge-introducing atomic layer

△ [16a-Z13-8] Elucidation of Interface Dipole Modulation Mechanism by Hard X-ray Photoemission Spectroscopy

△ [16a-Z13-9] Accumulation, depletion, inversion processes in metal/insulator/p-Si device evaluated by displacement current measurement

[16a-Z13-10] Relation between chemical bonds and electrical properties of thick insulation film formed by chemical vapor deposition

[16a-Z13-11] Anodic SiO₂ film fabricated in high pressure steam - Applied voltage dependence -

[16a-Z13-12] Dependence of Thermal Conductivity Along Si/SiO₂ Interface on Substrate Surface Orientation

[16p-P12-1~4] 13.3 Insulator technology

[16p-P12-1] Dependence of penetration barrier of alkali metal ions into SiNx and SiOx films on ion radius

[16p-P12-2] Theoretical Study of Strain Effect on Vacancies in SiO₂

[16p-P12-3] Effects of PDA on sputter-derived HfO₂/Ge structures

[16p-P12-4] Mechanism of ferroelectric phase evolution for ZrO₂ thin film by wet annealing

Authenticate

Sessions

13 Semiconductors » 13.3 Insulator technology

[16a-Z13-1~12] 13.3 Insulator technology

▲ [16a-Z13-5] [Young Scientist Presentation Award Speech] Defect control of Y2O3-based SiGe MOS interfaces properties

▲ [16a-Z13-6] Characterization of slow traps in MOS interfaces of TiN/Y2O3/SiGe gate stacks

△ [16a-Z13-7] Significant change of interface dipole effect at perovskite oxide epitaxial interface by the number of charge-introducing atomic layer

△ [16a-Z13-8] Elucidation of Interface Dipole Modulation Mechanism by Hard X-ray Photoemission Spectroscopy

△ [16a-Z13-9] Accumulation, depletion, inversion processes in metal/insulator/p-Si device evaluated by displacement current measurement

[16p-P12-1~4] 13.3 Insulator technology

Authenticate

▲ [16a-Z13-5] [Young Scientist Presentation Award Speech] Defect control of Y₂O₃-based SiGe MOS interfaces properties

▲ [16a-Z13-6] Characterization of slow traps in MOS interfaces of TiN/Y₂O₃/SiGe gate stacks