Oral presentation

[17a-Z28-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 17, 2021 9:00 AM - 11:45 AM Z28 (Z28)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[17a-Z28-1] Difference of macrostep flow behavior in 4H-SiC solution growth with various additives

〇Takeshi Mitani¹, Kazuma Eto¹, Tomohisa Kato¹ (1.AIST)

9:15 AM - 9:30 AM

[17a-Z28-2] Conversion of threading screw dislocation during off-oriented PVT growth of 4H-SiC

〇Kazuma Eto¹, Takeshi Mitani¹, Kenji Momose², Tomohisa Kato¹ (1.AIST, 2.Showa Denko K.K.)

9:30 AM - 9:45 AM

[17a-Z28-3] Interactions between Threading Edge Dislocations in 4H-SiC Crystal

〇Kiyoshi Betsuyaku¹, Norihiro Hoshino¹, Kamata Isaho¹, Kanda Takahiro², Tsuchida Hidekazu¹ (1.CRIEPI, 2.MIRISE)

9:45 AM - 10:00 AM

[17a-Z28-4] Observation of behavior of threading dislocations by synchrotron section topography

〇Isaho Kamata¹, Norihiro Hoshino¹, Kiyoshi Betsuyaku¹, Takahiro Kanda², Hidekazu Tsuchida¹ (1.CRIEPI, 2.MIRISE Tech.)

10:15 AM - 10:30 AM

[17a-Z28-5] Comparison of Al-adatom Concentrations near Step-edges during CVD of SiC on Si- and C-faces

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

10:30 AM - 10:45 AM

[17a-Z28-6] Analysis of Surface-diffusion Lengths of Carbon- and Nitrogen-Containing Molecules during Homoepitaxial Growth of 4H-SiC (0001) under Silicon-rich Conditions

〇Kazuhiro Mochizuki¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

10:45 AM - 11:00 AM

[17a-Z28-7] Behavior of carrot defects on SiC (000-1) face homoepitaxial layer

〇Taro Enokizono¹, Takaya Miyase¹, Hiroki Nishihara¹, Tetsuro Kondo¹, Hironori Itoh¹, Tsutomu Hori¹, Masaki Furumai¹ (1.Sumitomo Electric Industries, Ltd)

11:00 AM - 11:15 AM

[17a-Z28-8] SiC Epitaxial reactor cleaning by detaching SiC film

Takumi Mamyouda¹, Masaya Hayashi¹, 〇Hitoshi Habuka¹, Akio Ishiguro², Shigeaki Ishii², Yoshiaki Daigo², Hideki Ito², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama National Univ., 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

11:15 AM - 11:30 AM

[17a-Z28-9] To construct 4H-SiC p/n columns with relatively uniform doping profiles

〇Shiyang Ji¹, Katzutoshi Kojima¹, Mitsuru Sometani¹, Shinsuke Harada¹, Yasunori Tanaka¹, Hiroshi Yamaguchi¹ (1.AIST)

11:30 AM - 11:45 AM

[17a-Z28-10] Evaluation of the effect of the ion implantation process on carrier lifetimes in 4H-SiC SJ-UMOSFET

〇Takuya Fukui¹, Takeshi Tawara², Masashi Kato¹ (1.NITech., 2.AIST)

Oral presentation

[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 18, 2021 9:00 AM - 12:00 PM Z05 (Z05)

Hiroaki Hanafusa(Hiroshima Univ.), Hirokuni Asamizu(ローム)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-Z05-1] Conversion from Immobile Basal Plane Dislocations to Mobile Combinations of Partial Dislocations during Epitaxial Growth of 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba Corp.)

9:15 AM - 9:30 AM

[18a-Z05-2] Influence of steps in the surface on Contraction of Basal Plane Partial Dislocations in 4H-SiC

〇Atsuo Hirano¹, Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹ (1.Univ. of Tokyo)

9:30 AM - 9:45 AM

△ [18a-Z05-3] Depth estimation of basal plane dislocations in SiC by synchrotron X-ray topography

〇Fumihiro Fujie¹, Hongyu Peng², Tuerxun Ailihumaer², Balaji Raghothamachar², Michael Dudley², Shunta Harada¹, Miho Tagawa¹, Toru Ujihara^1,3 (1.Nagoya Univ., 2.Stony Brook Univ., 3.AIST GaN-OIL)

9:45 AM - 10:00 AM

△ [18a-Z05-4] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl

〇Tomoya Kimura¹, Kenta Chokawa², Atsushi Oshiyama², Kenji Shiraishi^2,1 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

10:00 AM - 10:15 AM

△ [18a-Z05-5] Study on high concentration of boron and nitrogen co-doping in 4H-SiC by closed sublimation growth

〇Yoma Yamane¹, Lu Weifang¹, Kosuke Yanai¹, Satosi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research center)

10:15 AM - 10:30 AM

△ [18a-Z05-6] Optimization of voltage-controlled anodic oxidation and surface passivation for porous fluorescent SiC

〇Kousuke Yanai¹, Lu Weifang¹, Yoma Yamane¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki² (1.Meijo Univ., 2.Akasaki research center)

10:45 AM - 11:00 AM

[18a-Z05-7] Crystallinity and contact resistance of n-type 4H-SiC formed by thin-film laser doping with KrF excimer laser

〇Takuma Yasunami¹, Toshihumi kikuchi^2,3, Kaname imokawa³, Daisuke Nakamura², Hiroshi Ikenoue^2,3 (1.Kyushu Univ., 2.ISEE. Kyushu Univ., 3.Gigaphoton Next GLP)

11:00 AM - 11:15 AM

▲ [18a-Z05-8] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact
with CF₄:O₂ Surface Treatment

〇Cuong Van Vuong¹, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Tetsuya Meguro¹, Tadashi Sato¹, Shin-Ichiro Kuroki¹ (1.Research Institute for Nanodevice and Bio Systems, Hiroshima University, 2.Phenitec Semiconductor Corp)

11:15 AM - 11:30 AM

△ [18a-Z05-9] Impact of interfacial layer insertion on Schottky barrier height of low work function metal/n-type 4H-SiC interface

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Mitsuaki Shimizu², Osamu Nakatsuka^1,3 (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.IMaSS, Nagoya Univ.)

11:30 AM - 11:45 AM

△ [18a-Z05-10] Analysis of Switching Characteristics of 4H-SiC Schottky PN Diodes

〇Ryo Kamewada¹, Kazutoshi Kojima², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.University of Tsukuba, 2.AIST)

11:45 AM - 12:00 PM

△ [18a-Z05-11] Fabrication and evaluation of 4H-SiC Schottky-pn-diode with high blocking voltage

〇(B)Yudai Kitamura¹, Ryo Kamewada¹, Kazutoshi Kojima², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba, 2.AIST)

Oral presentation

[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 18, 2021 1:30 PM - 6:00 PM Z05 (Z05)

Takuji Hosoi(Osaka Univ.), Wakana Takeuchi(Aichi Inst. of Tech.), Hirohisa Hirai(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[18p-Z05-1] Theoretical calculation of a switching threshold voltage in a SiC complementary JFET logic gate operating at high temperature

〇Mitsuaki Kaneko¹, Masashi Nakajima¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

1:45 PM - 2:00 PM

△ [18p-Z05-2] Electrical properties of sulfur donors characterized by Hall effect
measurements of sulfur-implanted n-type SiC

〇(B)Taiga Matsuoka¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:00 PM - 2:15 PM

[18p-Z05-3] Visualization of transient variation of internal temperature distribution during SiC-MOSFET operating using Optical-Interference Contactless Thermometer (OICT)

〇Keiya Fujimoto¹, Koyanagi Tatsuki¹, Takuma Sato¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Science and Engineering,Hiroshima Univ.)

2:15 PM - 2:30 PM

[18p-Z05-4] [Young Scientist Presentation Award Speech] Formation of high-quality 4H-SiC/SiO₂ interface by
H₂ etching prior to SiO₂ deposition and interface nitridation

〇Keita Tachiki¹, Mitsuaki Kaneko¹, Takuma Kobayashi¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:30 PM - 2:45 PM

△ [18p-Z05-5] Channel mobility of 4H-SiC(0001) p-channel MOSFETs with various donor concentrations of n-body

〇Kyota Mikami¹, Koji Ito¹, Keita Tachiki¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

2:45 PM - 3:00 PM

△ [18p-Z05-6] Body bias dependence of the effective channel mobility in SiC MOSFETs with phosphorus treatment

〇(D)Koji Ito¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

3:15 PM - 3:30 PM

△ [18p-Z05-7] XPS study of SiO₂/4H-SiC(112(_)0) interface with NO-POA

〇Takato Nakanuma¹, Takuji Hosoi¹, Mitsuru Sometani², Mitsuo Okamoto², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

3:30 PM - 3:45 PM

△ [18p-Z05-8] Differnce between 4H-SiC/SiO₂ nitrided interface structural changes by high temperature annealing and γ-ray irradiation

〇(M2)Yusuke Samata¹, Masahiro Masunaga², Akio Shima², Ryo Kuwana², Koji Kita¹ (1.The Univ. of Tokyo, 2.Hitachi, Ltd.)

3:45 PM - 4:00 PM

▼ [18p-Z05-9] Positive V_FB shift of 4H-SiC MOS capacitors induced by Al₂O₃/SiO₂ interface dipole layer formation

〇(D)Taehyeon Kil¹, Munetaka Noguchi², Hiroshi Watanabe², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Advanced Technology R&D Center, Mitsubishi Electric Corporation)

4:00 PM - 4:15 PM

△ [18p-Z05-10] Characterization method of near-interface trap on 4H-SiC MOS interface focusing on the increase of carrier trapping time constant at low temperature

〇(M1)Rimpei Hasegawa¹, Kouji Kita¹ (1.Tokyo Univ.)

4:15 PM - 4:30 PM

△ [18p-Z05-11] Analysis of 3 level charge pumping characteristics in SiC MOSFETs considering carrier trapping and emission processes at interface traps

〇Yuta Matsuya¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

4:45 PM - 5:00 PM

▲ [18p-Z05-12] Considerations on competition between SiC surface nitridation and etching at SiO₂/SiC interface induced by high-temperature N₂ annealing

〇(M2)Yang Tianlin¹, Kita Koji¹ (1.Univ. Tokyo)

5:00 PM - 5:15 PM

[18p-Z05-13] MOS structure fabrication on 4H-SiC surface after high temperature N₂ + H₂annealing

〇Toshihiro Saga¹, Koji Kita¹ (1.The Univ. of Tokyo)

5:15 PM - 5:30 PM

[18p-Z05-14] Thermal Oxidation Rate of SiC Surface: O2 Pressure Dependence

〇Yuta Murono¹, Masayoshi Sato¹, Haruto Koriyama¹, Yoshiharu Enta¹ (1.Hirosaki Univ.)

5:30 PM - 5:45 PM

[18p-Z05-15] Reaction mechanisms at 4H-SiC/SiO₂ interface by the coexistence of dry and wet oxidants

〇Tsunashi Shimizu¹, Toru Akiyama¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

5:45 PM - 6:00 PM

[18p-Z05-16] First-principles study on defect structure of SiC(000-1)/SiO₂ interface with wet oxidation

〇(M1)Mukai Tsunasaki¹, Yuki Mimbu¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1.Kobe Univ.)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[17a-Z28-1~10] 15.6 Group IV Compound Semiconductors (SiC)

[18a-Z05-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [18a-Z05-3] Depth estimation of basal plane dislocations in SiC by synchrotron X-ray topography

△ [18a-Z05-4] Study of Adsorption of H on Stepped SiC Surface during CVD using HCl

△ [18a-Z05-5] Study on high concentration of boron and nitrogen co-doping in 4H-SiC by closed sublimation growth

△ [18a-Z05-6] Optimization of voltage-controlled anodic oxidation and surface passivation for porous fluorescent SiC

▲ [18a-Z05-8] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contactwith CF4:O2 Surface Treatment

△ [18a-Z05-9] Impact of interfacial layer insertion on Schottky barrier height of low work function metal/n-type 4H-SiC interface

△ [18a-Z05-10] Analysis of Switching Characteristics of 4H-SiC Schottky PN Diodes

△ [18a-Z05-11] Fabrication and evaluation of 4H-SiC Schottky-pn-diode with high blocking voltage

[18p-Z05-1~16] 15.6 Group IV Compound Semiconductors (SiC)

△ [18p-Z05-2] Electrical properties of sulfur donors characterized by Hall effectmeasurements of sulfur-implanted n-type SiC

△ [18p-Z05-5] Channel mobility of 4H-SiC(0001) p-channel MOSFETs with various donor concentrations of n-body

△ [18p-Z05-6] Body bias dependence of the effective channel mobility in SiC MOSFETs with phosphorus treatment

△ [18p-Z05-7] XPS study of SiO2/4H-SiC(112(_)0) interface with NO-POA

△ [18p-Z05-8] Differnce between 4H-SiC/SiO2 nitrided interface structural changes by high temperature annealing and γ-ray irradiation

▼ [18p-Z05-9] Positive VFB shift of 4H-SiC MOS capacitors induced by Al2O3/SiO2 interface dipole layer formation

△ [18p-Z05-10] Characterization method of near-interface trap on 4H-SiC MOS interface focusing on the increase of carrier trapping time constant at low temperature

△ [18p-Z05-11] Analysis of 3 level charge pumping characteristics in SiC MOSFETs considering carrier trapping and emission processes at interface traps

▲ [18p-Z05-12] Considerations on competition between SiC surface nitridation and etching at SiO2/SiC interface induced by high-temperature N2 annealing

Authenticate

▲ [18a-Z05-8] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact
with CF₄:O₂ Surface Treatment

△ [18p-Z05-2] Electrical properties of sulfur donors characterized by Hall effect
measurements of sulfur-implanted n-type SiC

△ [18p-Z05-7] XPS study of SiO₂/4H-SiC(112(_)0) interface with NO-POA

△ [18p-Z05-8] Differnce between 4H-SiC/SiO₂ nitrided interface structural changes by high temperature annealing and γ-ray irradiation

▼ [18p-Z05-9] Positive V_FB shift of 4H-SiC MOS capacitors induced by Al₂O₃/SiO₂ interface dipole layer formation

▲ [18p-Z05-12] Considerations on competition between SiC surface nitridation and etching at SiO₂/SiC interface induced by high-temperature N₂ annealing