Poster presentation

[17p-P06-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 17, 2021 3:00 PM - 3:50 PM P06 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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3:00 PM - 3:50 PM

[17p-P06-1] Chemical Bath Deposition of MgZnO Nanorods and Fabrication of Schottky Junction UV Light Detectors

〇Rikuto Kanamaru¹, Kohdai Hamamoto¹, Tomoaki Terasako¹, Masakazu Yagi², Yutaka Furubayashi³, Tetsuya Yamamoto³ (1.Grad.School Sci.&.Eng.Ehime Univ., 2.Natl.Inst.Technol.(KOSEN),Kagawa Coll, 3.Res.Inst.,Kochi Univ.Technol)

3:00 PM - 3:50 PM

[17p-P06-2] SPM study on initial stage of epitaxial growth of NiO on β-Ga₂O₃(-201) surface

〇(B)Yusuke Seki¹, Arifumi Okada¹, Yuki Kajita¹, Hiroyuki Nishinaka¹, Romualdo A. Ferreyra², Daisuke Ueda³, Kohei Kadono¹ (1.Kyoto Inst. Tech, 2.Univ. de San Martin, 3.cLPS, Nagoya Univ)

3:00 PM - 3:50 PM

[17p-P06-3] Allooy composition control of α-(AlGa)₂O₃ thin films and Al desorption phenomena in mist CVD

〇Marika Ohta¹, ichiro tanaka¹, kazuyuki uno¹ (1.Wakayama Univ.)

3:00 PM - 3:50 PM

[17p-P06-4] Solid-phase crystallization of β-Ga₂O₃ thin films with various dopants
by Excimer Laser Annealing

〇(M1)Kazuki Watanabe¹, Takumi Matsushima¹, Tomoaki Oga¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.TOSHIMA Manu., 3.KISTEC)

3:00 PM - 3:50 PM

[17p-P06-5] Estimation for the electron effective mass of Rocksalt-structured MgZnO alloy

〇Yuichi Ota¹, Kentaro Kaneko², Takeyoshi Onuma³, Shizuo Fujita² (1.TIRI, 2.Kyoto Univ., 3.Kogakuin Univ.)

3:00 PM - 3:50 PM

[17p-P06-6] Repeated bending durability characterization of oxide thin films formed on flexible substrates and structural analysis by X-ray diffraction measurements

〇(D)Kazuyori Oura¹, Toshihiro Kumatani¹, Hideo Wada¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech.)

3:00 PM - 3:50 PM

[17p-P06-7] Effects of the post-annealing on the electrical properties of sol-gel derived Mg_xZn_1−xO thin films

〇Koji Abe¹, Yushi Hamada¹ (1.Nagoya Inst. Tech.)

3:00 PM - 3:50 PM

[17p-P06-8] Investigation of N₂ annealing condition towards high-performance p-type SnO TFTs

〇(B)Kotaro Watanabe¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

3:00 PM - 3:50 PM

[17p-P06-9] Influence of solution-based insulating films on the back-channel of In₂O₃ TFT

〇(B)Yuki Kumamoto¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

3:00 PM - 3:50 PM

[17p-P06-10] Resistive Switching Behavior Observed on Current-Voltage Properties of PEDOT:PSS/ZnO Nanorods/GZO Heterojunction Devices

〇Tomoaki Terasako¹, Masakazu Yagi², Yutaka Furubayashi³, Tetsuya Yamamoto³ (1.Ehime University, 2.Natl. Inst. Technol., Kagawa Coll., 3.Res. Inst., Kochi Univ. Technol.)

3:00 PM - 3:50 PM

[17p-P06-11] Photocurrent Spectra and Time Response Properties of PEDOT:PSS/ZnO Nanorods/GZO UV Light Detectors

〇Tomoaki Terasako¹, Masakazu Yagi², Yutaka Furubayashi³, Tetsuya Yamamoto³ (1.Ehime University, 2.Natl. Inst. Technol., Kagawa Coll., 3.Res. Inst., Kochi Univ. Technol.)

Oral presentation

[18a-Z33-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 18, 2021 9:00 AM - 11:30 AM Z33 (Z33)

Yamada Naoomi(Chubu Univ.), Magari Yusaku(Simane Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-Z33-1] Transformation from degenerate to non-degenerate Sn-doped In₂O₃ films by postirradaition of O^- ions

〇Yutaka Furubayashi¹, Makoto Maehara², Toshiyuki Sakemi², Hisashi Kitami^1,2, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industr. ltd.)

9:15 AM - 9:30 AM

[18a-Z33-2] New evaluation of degenerate/non-degenerate states and novel bandagp engineering of Sn-doped In₂O₃ films by postirradaition of O^- ions

〇Yutaka Furubayashi¹, Makoto Maehara², Toshiyuki Sakemi², Hisashi Kitami^1,2, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Ind., ltd.)

9:30 AM - 9:45 AM

[18a-Z33-3] Flexible transparent electrode with a high bending resistance based on hybrid of ITO micro-structure and metal grid

〇Akira Watanabe¹, Ashiqur Rahman¹, Megumi Komada² (1.IMRAM, Tohoku Univ., 2.Sumitomo Chemical)

9:45 AM - 10:00 AM

[18a-Z33-4] The sputter deposition of broadband transparent conductive In₂O₃:Ce,H and its transfer to silicon heterojunction solar cells

〇Takashi Koida¹, Leonard Tutsch^1,2, Hitoshi Sai¹, Takuya Matsui¹, Martin Bivour², Martin Hermle² (1.AIST, 2.Fraunhofer ISE)

10:00 AM - 10:15 AM

[18a-Z33-5] Effects on the photocatalytic activity and the wettability of depositing WO_x thin films and WO_x-SiO₂composite thin films on the TiO₂ surface by RF sputtering

〇Tomoaki Miyagi¹, Yoshiro Takahashi¹, Yasuki Akimoto¹, Masaki Sonoda¹ (1.Oita Inst.)

10:30 AM - 10:45 AM

[18a-Z33-6] Insulating-Degenerated-Insulating transition observed in electrical properties of mixed anion layered compounds, LaCu_1-δS_0.5Se_0.5O (δ=0-0.02)

〇Yoichi Kamihara^1,3, Nobuhiko Azuma¹, Ryosuke Sakagami¹, Hidetomo Usui² (1.Dep.APPI, Keio Univ., 2.Shimane Univ., 3.CSRN, Keio Univ.)

10:45 AM - 11:00 AM

[18a-Z33-7] Fabrication of miniaturized ITZO TFT for Active Pixel Image Sensor Application

〇Toshikatsu Sakai¹, Koki Imamura¹, Tomomi Takagi¹, Keitada Mineo¹, Toshihisa Watabe¹, Hiroto Sato¹, Satoshi Aihara¹ (1.NHK Sci. & Tech. Res. Labs.)

11:00 AM - 11:15 AM

[18a-Z33-8] Polycrystalline IGO:H films for high-mobility thin-film transistors

Kenta Simpo¹, Daiki Tanaka¹, Toshihiro Matsumura¹, Taiki Kataoka¹, Yusaku Magari¹, 〇Mamoru Furuta¹, Daichi Sasaki², Emi Kawashima², Yuki Tsuruma² (1.Kochi Univ. of Tech., 2.Idemitsu Kosan.)

11:15 AM - 11:30 AM

[18a-Z33-9] Schottky barrier diode using ultra-wide bandgap amorphous oxide semiconductor, a-Ga-O

〇Keisuke Ide¹, Yurika Kasai¹, Takayoshi Katase¹, Hidenori Hiramatsu^1,2, Hideo Hosono², Toshio Kamiya^1,2 (1.MSL, Tokyo Tech., 2.MCES, Tokyo Tech.)

Oral presentation

[18p-Z33-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 18, 2021 1:00 PM - 6:00 PM Z33 (Z33)

Tetsuya Yamamoto(Kochi Univ. of Tech.), Keisuke Ide(Tokyo Tech), Kohei SHIMA(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:30 PM

[18p-Z33-1] [The 11th Promotion and Nurturing of Female Researchers Contribution Award Speech] Fabrication of new ZnO-based mateirals by magnetron sputter epitaxy

〇Naho Itagaki¹ (1.Kyushu Univ.)

1:30 PM - 1:45 PM

▲ [18p-Z33-2] Effect of the thickness on the Properties of ZnO films synthesized
by mist chemical vapor deposition method

〇(D)Wai HtetSu, Chaoyang Li

1:45 PM - 2:00 PM

▲ [18p-Z33-3] The Emission Power of ZnO Nanoparticle-based LEDs enhanced by adding Silica nanoparticles.

〇(DC)ISLAM MOHAMMAD SHAFIQUL¹, Yuki Konishi¹, Raj Deep¹, Jie Lin², Toshiyuki Yoshida¹, Yasuhisa Fujita^1,2 (1.Shimane University, 2.S-Nanotech Co-Creation Ltd)

2:00 PM - 2:15 PM

▲ [18p-Z33-4] The Electroluminescence of ZnO nanoparticle-based LEDs improved by inserting a ZnMgO nanoparticles layer.

〇(DC)ISLAM MOHAMMAD SHAFIQUL¹, Yuki Konishi¹, Raj Deep¹, Jie Lin², Toshiyuki Yoshida¹, Yasuhisa Fujita^1,2 (1.Shimane University, 2.S-Nanotech Co-Creation Ltd)

2:15 PM - 2:30 PM

[18p-Z33-5] VUV Emission Properties of Rocksalt-structured MgZnO Microcrystals Prepared on Quartz Glass Substrates

〇Wataru Kosaka¹, Shoma Hoshi², Kanta Kudo¹, Yusei Igari¹, Kentaro Kaneko², Tomohiro Yamaguchi¹, Shizuo Fujita², Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.Kyoto Univ.)

2:45 PM - 3:00 PM

[18p-Z33-6] Electrical and optical properties of MgZnO transparent electrode materials deposited by high temperature sputtering

〇(M1)Taichi Matsubara¹, Maki Kushimoto¹, Hirotaka Watanabe², Yuta Furusawa², Syugo Nitta², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,5 (1.Nagoya Univ., 2.IMaSS, 3.VBL, 4.IAR, 5.Akasaki RC)

3:00 PM - 3:15 PM

[18p-Z33-7] Chemical trends of n-type doping of Al, Ga, In, and Ti donors for magnetron-sputtered ZnO polycrystalline films

〇Junichi Nomoto¹, Hisao Makino², Tetsuo Tsuchiya¹, Tetsuya Yamamoto² (1.Advanced Coating Technology Research Center, AIST, 2.Research Inst. Kochi Univ. Tech.)

3:15 PM - 3:30 PM

[18p-Z33-8] Characterization of piezoelectric property in Mg_0.6Zn_0.4O/ZnO pressure sensors by the resonance-antiresonance method

〇Haruyuki Endo¹, Takayuki Nihei¹, Kazunori Suzuki¹, Akira Barajima¹, Yasube Kashiwaba² (1.Iwate Ind. Res. Inst., 2.Iwate Univ.)

3:30 PM - 3:45 PM

[18p-Z33-9] Chemical-bonding states of ZnO films containing residual Ar atoms

〇Tetsuya Yamamoto¹, Junichi Nomoto², Hisao Makino¹, Tomohiko Nakajima², Tetsuo Tsuchiya² (1.Kochi Univ. Tech., Res. Inst., 2.AIST., ACT.)

3:45 PM - 4:00 PM

[18p-Z33-10] Property change of Al-doped ZnO films due to deposition position and annealing

〇Yasuji Yamada¹, Motonari Shoriki¹, Rei Sugiura¹, Shuhei Funaki¹ (1.Shimane Univ.)

4:15 PM - 4:30 PM

[18p-Z33-11] Critical Layer Thickness of (AlGa)₂O₃ Layers on b-Ga₂O₃ (010) Substrates

〇Hironori Okumura¹ (1.Univ. of Tsukuba)

4:30 PM - 4:45 PM

[18p-Z33-12] Crystal Orientation Dependence of α-Al₂O₃ Homoepitaxial Growth

〇Riena Jinno¹, Hironori Okumura¹ (1.Univ. of Tsukuba)

4:45 PM - 5:00 PM

[18p-Z33-13] Formation of NiGa₂O₄ thin films on Ga₂O₃ substrates

〇Shinji Nakagomi¹, Yoshihiro Kokubun¹ (1.Ishinomaki Senshu)

5:00 PM - 5:15 PM

[18p-Z33-14] Epitaxial growth of high Mg composition Ni_1-xMg_xO thin film by mist CVD

〇(M1)Yihua Sun¹, Takumi Ikenoue¹, Masao Miyake¹, Tetsuji Hirato¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

[18p-Z33-15] In-plane orientation control of (001) κ-Ga₂O₃ by epitaxial lateral overgrowth through a geometrical natural selection mechanism

〇Yuichi Oshima¹, Katsuaki Kawara², Takayoshi Oshima², Takashi Shinohe² (1.NIMS, 2.FLOSFIA)

5:30 PM - 5:45 PM

[18p-Z33-16] β-Ga₂O₃ homoepitaxial growth using gaseous GaCl₃

〇(B)Risa Nagano¹, Kentaro Ema¹, Kohei Sasaki², Akito Kuramata², Hisashi Murakami¹ (1.Tokyo Univ. of Agri & Tech., 2.Novel Crystal Technology, Inc.)

5:45 PM - 6:00 PM

[18p-Z33-17] Nearly Ideal Thermionic Emission and Thermionic Field Emission in α-Ga₂O₃ Schottky Barrier Diodes Grown on Sapphire Substrate by Mist-CVD

〇Takuya Maeda¹, Mitsuru Okigawa², Yuji Kato², Isao Takahashi², Takashi Shinohe² (1.Kyoto Univ., 2.FLOSFIA Inc.)

Oral presentation

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 9:00 AM - 12:15 PM Z33 (Z33)

Kazuyuki Uno(Wakayama Univ.), Oshima Yuichi(NIMS)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [19a-Z33-1] Board-band Terahertz Birefringence of Fe-doped Gallium Oxide (Ga₂O₃)

〇(M1)Ke Wang¹, Hao Jiang¹, Chen Gong¹, Hironaru Murakami¹, Masayoshi Tonouchi¹ (1.Osaka Univ.)

9:15 AM - 9:30 AM

[19a-Z33-2] Electrical Characterization of Si-Doped β-Ga₂O₃ (010) Single Crystals Annealed at High Temperatures

〇Yoshitaka Nakano¹, Akira Toyotome¹, Riku Suzuki¹, Yuki Yasuda¹ (1.Chubu Univ.)

9:30 AM - 9:45 AM

[19a-Z33-3] Study on deep level in Sn-doped α-Ga₂O₃ grown on m-face sapphire by using cathodoluminescence method Ⅱ

〇Ryo Moriya¹, Junjiro Kikawa¹, Isao Takahashi², Takashi Shinohe², Xiao Shiyu³, Hideto Miyake³, Tsutomu Araki¹ (1.Ritsumeikan Unv., 2.FLOSFIA Inc., 3.Mie Unv.)

9:45 AM - 10:00 AM

[19a-Z33-4] Characterization of Microstructures in β-Ga₂O₃ Crystals by Raman Mapping

〇(M1)Masahiko Nakanishi¹, Mayu Iizuka¹, Kohei Shoji¹, Satoshi Masuya², Makoto Kasu³, Tomohiro Yamaguchi¹, Tohru Honda¹, Kohei Sasaki², Akito Kuramata², Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.NCT, 3.Saga Univ.)

10:00 AM - 10:15 AM

[19a-Z33-5] Fragile (010) surface of β-Ga₂O₃

〇Hirotaka Yamaguchi¹, Shinya Watanabe², Yu Yamaoka², Kimiyoshi Koshi², Akito Kuramata² (1.AIST, 2.Novel Crystal Tech.)

10:15 AM - 10:30 AM

[19a-Z33-6] Post-deposition annealing effect on ALD-Al₂O₃ formed on (001) β-Ga₂O₃

〇Atsushi Hiraiwa^1,4, Kiyotaka Horikawa², Hiroshi Kawarada^1,2,3, Motohisa Kado⁵, Katsunori Danno⁵ (1.RONLI, Waseda Univ., 2.FSE, Waseda Univ., 3.KMLMST, Waseda Univ., 4.IMaSS, Nagoya Univ., 5.Toyota Motor Corp.)

10:45 AM - 11:00 AM

▼ [19a-Z33-7] Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga₂O₃ SBDs Identified by High Sensitive Emission Microscope

〇(D)Sayleap Sdoeung¹, Kohei Sasaki², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK)

11:00 AM - 11:15 AM

[19a-Z33-8] Stacking Faults Generated from Micro Particles-Origin of Leakage Current in HVPE (001) beta-Gallium Oxide Epilayers Determined by High-Sensitive Emission Microscope

〇Makoto Kasu¹, Sayleap Sdoeung¹, Kohei Sasaki², Satoshi Masuya², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK Corp.)

11:15 AM - 11:30 AM

△ [19a-Z33-9] Effect of excess Cl₂ supply on HVPE growth of β-Ga₂O₃ by GaCl-O₂ system

〇Akane Mori¹, Yuya Saimoto¹, Ken Goto¹, Yoshinao Kumagai¹ (1.Tokyo Univ. Agric. and Tech.)

11:30 AM - 11:45 AM

△ [19a-Z33-10] Thin-film growth of N-doped Ga₂(O_1−xS_x)₃ by using pulsed-laser deposition

〇Takumi Saito¹, Yuta Ihara¹, Takuto Soma¹, Motohisa Kado², Akira Ohtomo^1,3 (1.Tokyo Tech., 2.Toyota Motor Corp., 3.MCES)

11:45 AM - 12:00 PM

△ [19a-Z33-11] Growth mechanisms of α-Ga₂O₃ on sapphire substrate in the initial stage

〇(M1)Hitoshi Takane¹, Kentaro Kaneko¹, Yuichi Ota², Shizuo Fujita¹ (1.Kyoto Univ., 2.Tokyo Metropolitan Industrial Technology Research Inst.)

12:00 PM - 12:15 PM

▼ [19a-Z33-12] Characterization of γ-Al₂O₃/β-Ga₂O₃ interface with photo-assisted capacitance-voltage method

〇Nan Zhang¹, Takumi Saito¹, Kaisei Kamei¹, Takuto Soma¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

Oral presentation

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 1:30 PM - 6:00 PM Z33 (Z33)

Yasuaki Ishikawa(Aoyama Gakuin Univ.), Kohei Fujiwara(Tohoku Univ.), Akifumi Matsuda(Tokyo Tech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

▼ [19p-Z33-1] Digitalized Mist-Chemical Vapor Deposition of atomic-layer Molybdenum Disulfide (MoS₂) Flakes at Low Temperatures

〇(D)Abdul A Kuddus¹, Arifuzzaman Rajib¹, Shimomura Kazushi¹, Yokoyama Kojun¹, Keiji Ueno¹ (1.Saitama University)

1:45 PM - 2:00 PM

▼ [19p-Z33-2] Aluminum titanium oxide Thin Films Synthesized by Mist-CVD and Applied as a Gate Insulating Layer

〇(D)Arifuzzaman Rajib Rajib¹, Abdul Kuddus¹, Tomohiro Shida¹, Kojun Yokoyama¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama Univ.)

2:00 PM - 2:15 PM

△ [19p-Z33-3] Fabrication of bilayer oxide thin-film-transistors by a solution process and dependence of sintering atmosphere and film thickness of AZO buffer layers

〇(D)Kazuyori Oura¹, Hideo Wada¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech.)

2:15 PM - 2:30 PM

△ [19p-Z33-4] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (6)

〇Junnosuke Sano¹, Yohei Satou¹, Yuuta Ide¹, Chihiro Yoshida¹, Tsutomu Muranaka¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Yamanashi Univ.)

2:30 PM - 2:45 PM

△ [19p-Z33-5] Thermal stability of resistance of ion-implanted amorphous-InGaZnO film

〇Keisuke Yasuta¹, Toshimasa Ui¹, Junichi Tatemichi¹ (1.NISSIN ION EQUIPMENT)

2:45 PM - 3:00 PM

△ [19p-Z33-6] Crystallinity and electrical properties of SPC-In₂O₃:H for thin-film transistors

〇(M1)Taiki Kataoka¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech, 2.Center for Nanotechnology Kochi Univ. of Tech)

3:15 PM - 3:30 PM

△ [19p-Z33-7] Effect of varied surface modifications of cyclic olefin polymer substrates on the oriented crystal growth of ZnO thin films

〇(D)Tomoaki Oga¹, Naho Kaneko¹, Satoru Kaneko^2,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.KISTEC)

3:30 PM - 3:45 PM

△ [19p-Z33-8] Origin of high mobility in W-doped SnO₂ thin films

〇Michitaka Fukumoto¹, Yasushi Hirose¹, Shoichiro Nakao¹, Koji Kimura², Koichi Hayashi², Yuki Sugisawa³, Daiichiro Sekiba³, Tetsuya Hasegawa¹ (1.Univ. of Tokyo, 2.Nagoya Inst. of Technol., 3.UTTAC)

3:45 PM - 4:00 PM

▼ [19p-Z33-9] Band Engineering of Transparent Oxide Semiconductor ASnO₃ (A = Ba, Ca, and Sr)

〇(DC)Mian Wei¹, Hai Jun Cho^1,2, Hiromichi Ohta^1,2 (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ.)

4:00 PM - 4:15 PM

△ [19p-Z33-10] Synthesis and Evaluation of Ternary Widegap Cu₂ZnI₄

〇(M1)Hideaki Yamada¹, Shuji Okada¹, Yuta Tanida¹, Naoomi Yamada¹ (1.Chubu Univ.)

4:15 PM - 4:30 PM

△ [19p-Z33-11] Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

〇Kohei Shima¹, Kentaro Furusawa¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ.)

4:45 PM - 5:00 PM

△ [19p-Z33-12] Oxygen vacancy formation around Sn in p-type semiconducting Sn-Nb complex oxides

〇Akane Samizo¹, Naoto Kikuchi², Makoto Miinohara², Kyoko Bando², Yoshihiro Aiura², Ko Mibu³, Keishi Nishio¹ (1.Tokyo Univ. Sci., 2.AIST, 3.Nagoya Inst. Tech.)

5:00 PM - 5:15 PM

△ [19p-Z33-13] Improvement of carrier density of p-type α-SnWO₄ by thermal annealing in oxygen

〇(M1)Yuka Dobashi¹, Naoto Kikuchi², Makoto Minohara², Akane Samizo¹, Keishi Nishio¹ (1.Tokyo Univ. Sci., 2.AIST)

5:15 PM - 5:30 PM

△ [19p-Z33-14] Water Splitting Over SrTiO3 Model Photocatalyst With Comb-shaped Pt Electrode

〇Soraya Shizumi¹, Tatsuro Endo¹, Tsutomu Minegishi², Masakazu Sugiyama² (1.Univ. Tokyo., 2.RCAST, Univ. Tokyo.)

5:30 PM - 5:45 PM

△ [19p-Z33-15] Study on antibacterial mechanism in CuCrO₂ thin films

〇Hikaru Takeda¹, Shuhei Matsuzawa², Takeru Okada², Makoto Kanzaki³, Katsuyoshi Washio² (1.Sch. Eng., Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ., 3.Grad. Sch. Bio Eng., Tohoku Univ.)

5:45 PM - 6:00 PM

△ [19p-Z33-16] Optical properties of rutile Sn_1-xGe_xO₂ thin films

〇(M1)Yo Nagashima¹, Yasushi Hirose¹, Masato Tsuchii¹, Michitaka Fukumoto¹, Tetsuya Hasegawa¹ (1.Tokyo Univ.)

Sessions

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17p-P06-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-Z33-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-Z33-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [18p-Z33-2] Effect of the thickness on the Properties of ZnO films synthesizedby mist chemical vapor deposition method

▲ [18p-Z33-3] The Emission Power of ZnO Nanoparticle-based LEDs enhanced by adding Silica nanoparticles.

▲ [18p-Z33-4] The Electroluminescence of ZnO nanoparticle-based LEDs improved by inserting a ZnMgO nanoparticles layer.

[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [19a-Z33-1] Board-band Terahertz Birefringence of Fe-doped Gallium Oxide (Ga2O3)

▼ [19a-Z33-7] Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope

△ [19a-Z33-9] Effect of excess Cl2 supply on HVPE growth of β-Ga2O3 by GaCl-O2 system

△ [19a-Z33-10] Thin-film growth of N-doped Ga2(O1−xSx)3 by using pulsed-laser deposition

△ [19a-Z33-11] Growth mechanisms of α-Ga2O3 on sapphire substrate in the initial stage

▼ [19a-Z33-12] Characterization of γ-Al2O3/β-Ga2O3 interface with photo-assisted capacitance-voltage method

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [19p-Z33-1] Digitalized Mist-Chemical Vapor Deposition of atomic-layer Molybdenum Disulfide (MoS2) Flakes at Low Temperatures

▼ [19p-Z33-2] Aluminum titanium oxide Thin Films Synthesized by Mist-CVD and Applied as a Gate Insulating Layer

△ [19p-Z33-3] Fabrication of bilayer oxide thin-film-transistors by a solution process and dependence of sintering atmosphere and film thickness of AZO buffer layers

△ [19p-Z33-4] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (6)

△ [19p-Z33-5] Thermal stability of resistance of ion-implanted amorphous-InGaZnO film

△ [19p-Z33-6] Crystallinity and electrical properties of SPC-In2O3:H for thin-film transistors

△ [19p-Z33-7] Effect of varied surface modifications of cyclic olefin polymer substrates on the oriented crystal growth of ZnO thin films

△ [19p-Z33-8] Origin of high mobility in W-doped SnO2 thin films

▼ [19p-Z33-9] Band Engineering of Transparent Oxide Semiconductor ASnO3 (A = Ba, Ca, and Sr)

△ [19p-Z33-10] Synthesis and Evaluation of Ternary Widegap Cu2ZnI4

△ [19p-Z33-11] Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

△ [19p-Z33-12] Oxygen vacancy formation around Sn in p-type semiconducting Sn-Nb complex oxides

△ [19p-Z33-13] Improvement of carrier density of p-type α-SnWO4 by thermal annealing in oxygen

△ [19p-Z33-14] Water Splitting Over SrTiO3 Model Photocatalyst With Comb-shaped Pt Electrode

△ [19p-Z33-15] Study on antibacterial mechanism in CuCrO2 thin films

△ [19p-Z33-16] Optical properties of rutile Sn1-xGexO2 thin films

Authenticate

▲ [18p-Z33-2] Effect of the thickness on the Properties of ZnO films synthesized
by mist chemical vapor deposition method

▲ [19a-Z33-1] Board-band Terahertz Birefringence of Fe-doped Gallium Oxide (Ga₂O₃)

▼ [19a-Z33-7] Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga₂O₃ SBDs Identified by High Sensitive Emission Microscope

△ [19a-Z33-9] Effect of excess Cl₂ supply on HVPE growth of β-Ga₂O₃ by GaCl-O₂ system

△ [19a-Z33-10] Thin-film growth of N-doped Ga₂(O_1−xS_x)₃ by using pulsed-laser deposition

△ [19a-Z33-11] Growth mechanisms of α-Ga₂O₃ on sapphire substrate in the initial stage

▼ [19a-Z33-12] Characterization of γ-Al₂O₃/β-Ga₂O₃ interface with photo-assisted capacitance-voltage method

▼ [19p-Z33-1] Digitalized Mist-Chemical Vapor Deposition of atomic-layer Molybdenum Disulfide (MoS₂) Flakes at Low Temperatures

△ [19p-Z33-6] Crystallinity and electrical properties of SPC-In₂O₃:H for thin-film transistors

△ [19p-Z33-8] Origin of high mobility in W-doped SnO₂ thin films

▼ [19p-Z33-9] Band Engineering of Transparent Oxide Semiconductor ASnO₃ (A = Ba, Ca, and Sr)

△ [19p-Z33-10] Synthesis and Evaluation of Ternary Widegap Cu₂ZnI₄

△ [19p-Z33-13] Improvement of carrier density of p-type α-SnWO₄ by thermal annealing in oxygen

△ [19p-Z33-15] Study on antibacterial mechanism in CuCrO₂ thin films

△ [19p-Z33-16] Optical properties of rutile Sn_1-xGe_xO₂ thin films